DATASHEET
ISL6612A, ISL6613A
Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
The ISL6612A and ISL6613A are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612A drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6613A drives both upper and lower gates over
a range of 5V to 12V. This drive-voltage provides the
flexibility necessary to optimize applications involving
trade-offs between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at
which the PHASE node is connected to the gate of the low
side MOSFET (LGATE). The output voltage of the converter
is then limited by the threshold of the low side MOSFET,
which provides some protection to the microprocessor if the
upper MOSFET(s) is shorted during initial startup.
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
FN9159
Rev 7.00
May 1, 2012
Features
• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
DS(ON)
Conduction Offset Effect
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications with
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)
Applications
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB417 for Power Train Design, Layout
Guidelines, and Feedback Compensation Design
FN9159 Rev 7.00
May 1, 2012
Page 1 of 12
ISL6612A, ISL6613A
Ordering Information
PART NUMBER
(Notes 2, 3)
ISL6612ACBZ
ISL6612ACBZ-T (Note 1)
ISL6612ACBZA
ISL6612ACBZA-T (Note 1)
ISL6612ACRZ
ISL6612ACRZ-T (Note 1)
ISL6612AECBZ
ISL6612AECBZ-T (Note 1)
ISL6612AEIBZ
ISL6612AEIBZ-T (Note 1)
ISL6612AIBZ
ISL6612AIBZ-T (Note 1)
ISL6612AIRZ
ISL6612AIRZ-T (Note 1)
ISL6613ACBZ
ISL6613ACBZ-T (Note 1)
ISL6613ACRZ
ISL6613ACRZ-T (Note 1)
ISL6613AECBZ
ISL6613AECBZ-T (Note 1)
ISL6613AEIBZ
ISL6613AEIBZ-T (Note 1)
ISL6613AIBZ
ISL6613AIBZ-T (Note 1)
ISL6613AIRZ
ISL6613AIRZ-T (Note 1)
NOTES:
1.
Please refer to
TB347
for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte
tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-
free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information page for
ISL6612A, ISL6613A.
For more information on
MSL please see techbrief
TB363.
PART MARKING
6612 ACBZ
6612 ACBZ
6612 ACBZ
6612 ACBZ
12AZ
12AZ
6612 AECBZ
6612 AECBZ
6612 AEIBZ
6612 AEIBZ
6612 AIBZ
6612 AIBZ
2AIZ
2AIZ
6613 ACBZ
6613 ACBZ
13AZ
13AZ
6613 AECBZ
6613 AECBZ
6613 AEIBZ
6613 AEIBZ
6613 AIBZ
6613 AIBZ
3AIZ
3AIZ
TEMP.
RANGE (°C)
0 to +85
0 to +85
0 to +85
0 to +85
0 to +85
0 to +85
0 to +85
0 to +85
-40 to +85
-40 to +85
-40 to +85
-40 to +85
-40 to +85
-40 to +85
0 to +85
0 to +85
0 to +85
0 to +85
0 to +85
0 to +85
-40 to +85
-40 to +85
-40 to +85
-40 to +85
-40 to +85
-40 to +85
8 Ld SOIC
8 Ld SOIC Tape and Reel
8 Ld SOIC
8 Ld SOIC Tape and Reel
10 Ld 3x3 DFN
10 Ld 3x3 DFN Tape and Reel
8 Ld EPSOIC
8 Ld EPSOIC Tape and Reel
8 Ld EPSOIC
8 Ld EPSOIC Tape and Reel
8 Ld SOIC
8 Ld SOIC Tape and Reel
10 Ld 3x3 DFN
10 Ld 3x3 DFN Tape and Reel
8 Ld SOIC
8 Ld SOIC Tape and Reel
10 Ld 3x3 DFN
10 Ld 3x3 DFN Tape and Reel
8 Ld EPSOIC
8 Ld EPSOIC Tape and Reel
8 Ld EPSOIC
8 Ld EPSOIC Tape and Reel
8 Ld SOIC
8 Ld SOIC Tape and Reel
10 Ld 3x3 DFN
10 Ld 3x3 DFN Tape and Reel
PACKAGE
(Pb-free)
PKG.
DWG. #
M8.15
M8.15
M8.15
M8.15
L10.3x3
L10.3x3
M8.15B
M8.15B
M8.15B
M8.15B
M8.15
M8.15
L10.3x3
L10.3x3
M8.15
M8.15
L10.3x3
L10.3x3
M8.15B
M8.15B
M8.15B
M8.15B
M8.15
M8.15
L10.3x3
L10.3x3
FN9159 Rev 7.00
May 1, 2012
Page 2 of 12
ISL6612A, ISL6613A
Pinouts
ISL6612ACB, ISL6612AIB, ISL6613ACB, ISL6613AIB (SOIC)
ISL6612AECB, ISL6612AEIB, ISL6613AECB, ISL6613AEIB
(EPSOIC)
TOP VIEW
UGATE
BOOT
PWM
GND
1
2
3
4
GND
8
7
6
5
PHASE
PVCC
VCC
LGATE
ISL6612ACR, ISL6612AIR, ISL6613ACR, ISL6613AIR
(10 LD 3x3 DFN)
TOP VIEW
UGATE
BOOT
N/C
PWM
GND
1
2
3
4
5
GND
10 PHASE
9 PVCC
8
7
N/C
VCC
6 LGATE
Block Diagram
UVCC
VCC
+5V
10k
PWM
POR/
CONTROL
8k
LOGIC
Pre-POR OVP
FEATURES
ISL6612A AND ISL6613A
BOOT
UGATE
PHASE
(LVCC)
PVCC
SHOOT-
THROUGH
PROTECTION
UVCC = VCC FOR ISL6612A
UVCC = PVCC FOR ISL6613A
LGATE
GND
PAD
FOR DFN AND EPSOIC-DEVICES, THE PAD ON THE BOTTOM SIDE OF
THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
FN9159 Rev 7.00
May 1, 2012
Page 3 of 12
ISL6612A, ISL6613A
Typical Application - 3 Channel Converter Using ISL65xx and ISL6612A Gate Drivers
+5V TO 12V
+12V
VCC
PVCC
PWM
BOOT
UGATE
ISL6612A
PHASE
LGATE
GND
+5V TO 12V
+12V
+5V
VCC
VFB
VSEN
PGOOD
VCC
COMP
PVCC
PWM1
PWM2
PWM3
LGATE
MAIN
CONTROL
ISL65xx
GND
PWM
ISL6612A
BOOT
UGATE
PHASE
+V
CORE
VID
ISEN1
ISEN2
FS
ISEN3
GND
+5V TO 12V
+12V
VCC
PVCC
PWM
BOOT
UGATE
ISL6612A
PHASE
LGATE
GND
FN9159 Rev 7.00
May 1, 2012
Page 4 of 12
ISL6612A, ISL6613A
Absolute Maximum Ratings
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
BOOT-GND
) . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Input Voltage (V
PWM
). . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
UGATE . . . . . . . . . . . . . . . . . . . V
PHASE
- 0.3V
DC
to V
BOOT
+ 0.3V
V
PHASE
- 3.5V (<100ns Pulse Width, 2µJ) to V
BOOT
+ 0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to V
PVCC
+ 0.3V
GND - 5V (<100ns Pulse Width, 2µJ) to V
PVCC
+ 0.3V
PHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
DC
to 24V
DC
GND - 8V (<400ns, 20µJ) to 31V (<200ns, V
BOOT-GND
<36V)
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . .Class I JEDEC STD
Thermal Information
Thermal Resistance
JA
(°C/W)
JC
(°C/W)
SOIC Package (Note 1) . . . . . . . . . . . .
100
N/A
EPSOIC Package (Notes 2, 3) . . . . . .
50
7
DFN Package (Notes 2, 3). . . . . . . . . .
48
7
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range. . . . . . . . . . -65°C to +150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300°C
(SOIC - Lead Tips Only)
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . -40°C to +85°C
Maximum Operating Junction Temperature . . . . . . . . . . . . +125°C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
10%
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . 5V to 12V
10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
4.
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air.
5.
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
6. For
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
PARAMETER
VCC SUPPLY CURRENT
Bias Supply Current
Recommended Operating Conditions, Unless Otherwise Noted.
SYMBOL
TEST CONDITIONS
MIN
(Note 8)
TYP
MAX
(Note 8) UNITS
I
VCC
I
VCC
ISL6612A, f
PWM
= 300kHz, V
VCC
= 12V
ISL6613A, f
PWM
= 300kHz, V
VCC
= 12V
ISL6612A, f
PWM
= 1MHz, V
VCC
= 12V
ISL6613A, f
PWM
= 1MHz, V
VCC
= 12V
ISL6612A, f
PWM
= 300kHz, V
PVCC
= 12V
ISL6613A, f
PWM
= 300kHz, V
PVCC
= 12V
ISL6612A, f
PWM
= 1MHz, V
PVCC
= 12V
ISL6613A, f
PWM
= 1MHz, V
PVCC
= 12V
-
-
-
-
-
-
-
-
7.2
4.5
11
5
2.5
5.2
7
13
-
-
-
-
-
-
-
-
mA
mA
mA
mA
mA
mA
mA
mA
Gate Drive Bias Current
I
PVCC
I
PVCC
POWER-ON RESET AND ENABLE
VCC Rising Threshold
VCC Rising Threshold
VCC Falling Threshold
VCC Falling Threshold
PWM INPUT (See “TIMING DIAGRAM” on page 7.)
Input Current
I
PWM
V
PWM
= 5V
V
PWM
= 0V
PWM Rising Threshold
PWM Falling Threshold
Typical Three-State Shutdown Window
Three-State Lower Gate Falling Threshold
Three-State Lower Gate Rising Threshold
Three-State Upper Gate Rising Threshold
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
VCC = 12V
-
-
-
-
1.80
-
-
-
450
-400
3.00
2.00
-
1.50
1.00
3.20
-
-
-
-
2.40
-
-
-
µA
µA
V
V
V
V
V
V
T
A
= 0°C to +85°C
T
A
= -40°C to +85°C
T
A
= 0°C to +85°C
T
A
= -40°C to +85°C
9.35
8.35
7.35
6.35
9.80
9.80
7.60
7.60
10.00
10.00
8.00
8.00
V
V
V
V
FN9159 Rev 7.00
May 1, 2012
Page 5 of 12
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
