FMG2G400US60
IGBT
FMG2G400US60
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and
switching losses as well as short circuit ruggedness. It’s
designed for the applications such as motor control,
uninterrupted power supplies (UPS) and general inverters
where short-circuit ruggedness is required.
Features
•
•
•
•
•
•
Short Circuit Rated Time; 10us @ T
C
=100°C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE
(sat) = 2.1 V @ I
C
= 400A
High Input Impedance
Fast & Soft Anti-Parallel FWD
UL Certified No.E209204
Package Code : 7PM-IA
Application
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
C1
E1/C2
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
T
J
T
STG
V
ISO
Mounting Torque
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminal Screw : M6
Mounting Screw : M6
@ T
C
= 80°C
@ T
C
= 80°C
@ T
C
= 25°C
@ T
C
= 100°C
FMG2G400US60
600
± 20
400
800
400
800
1136
10
-40 to +150
-40 to +125
2500
4.0
4.0
Units
V
V
A
A
A
A
W
us
°C
°C
V
N.m
N.m
@ AC 1minute
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2003 Fairchild Semiconductor Corporation
FMG2G400US60 Rev. A
FMG2G400US60
Electrical Characteristics of IGBT
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
± 100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
I
C
= 400mA, V
CE
= V
GE
I
C
= 400A
,
V
GE
= 15V
5.0
--
6.5
2.1
8.5
2.7
V
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 300 V, I
C
= 400A,
R
G
= 2Ω, V
GE
= 15V,
Inductive Load, T
C
= 25°C
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
160
220
230
150
9.5
21
320
240
290
230
11
26
--
1200
310
490
--
--
--
250
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
us
nC
nC
nC
V
CC
= 300 V, I
C
= 400A,
R
G
= 2Ω, V
GE
= 15V,
Inductive Load, T
C
= 125°C
V
CC
= 300 V, V
GE
= 15V
100°C
@
T
C
=
V
CE
= 300 V, I
C
=400A,
V
GE
= 15V
Electrical Characteristics of DIODE
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
T
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 400A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 400A
di / dt = 800 A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
35
76
1580
4940
Max.
2.8
--
130
--
46
--
3000
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θJC
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
Typ.
--
--
0.03
360
Max.
0.11
0.18
--
--
Units
°C/W
°C/W
°C/W
g
©2003 Fairchild Semiconductor Corporation
FMG2G400US60 Rev. A
FMG2G400US60
6 0 0
5 0 0
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
6 0 0
5 0 0
Common Emitter
T
C
= 25℃
2 0 V
1 5 V
1 2 V
V
G E
= 1 0 V
[ A ]
[ A ]
C o ll e c t o r C u r r e n t , I
C
4 0 0
3 0 0
2 0 0
1 0 0
0
1
1 0
C E
4 0 0
3 0 0
2 0 0
1 0 0
0
0
1
2
3
C E
C o ll e c t o r C u r r e n t , I
C
4
C o ll e c t o r - E m it t e r V o lt a g e , V
[ V ]
C o ll e c t o r - E m it t e r V o lt a g e , V
[ V ]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
6 0 0
5 0 0
Common Emitter
T
C
= 125℃
2 0 V
1 5 V
1 2 V
4 . 0
3 . 5
3 . 0
2 . 5
2 . 0
1 . 5
1 . 0
2 5
5 0
7 5
C
Common Emitter
V
GE
= 15V
[ A ]
3 0 0
2 0 0
1 0 0
0
0
1
2
3
C E
C o ll e c t o r - E m it t e r V o lt a g e , V
4 0 0
V
G E
= 1 0 V
C E
[ V ]
6 0 0 A
C o ll e c t o r C u r r e n t , I
C
4 0 0 A
2 0 0 A
4
C o ll e c t o r - E m it t e r V o lt a g e , V
[ V ]
1 0 0
[℃]
1 2 5
C a s e T e m p e r a t u r e , T
Fig 3. Typical Saturation Voltage
Characteristics
Fig 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
1 0 0 0 0
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 400A
T
C
= 25℃
━━
T
C
= 125℃ ------
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 400A
T
C
= 25℃
━━
T
C
= 125℃ ------
1 0 0 0
S w it c h i n g T i m e [ n s ]
S w it c h i n g T i m e [ n s ]
T o n
T r
T o ff
1 0 0 0
T f
1 0 0
1 0 0
2
4
6
8
1 0
1 2
1 4
2
4
6
8
1 0
1 2
1 4
G a t e R e sis t a n c e , R g [
Ω
]
G a t e R e sis t a n c e , R g [
Ω
]
Fig 5. Turn-On Characteristics vs.
Gate Resistance
©2003 Fairchild Semiconductor Corporation
Fig 6. Turn-Off Characteristics vs.
Gate Resistance
FMG2G400US60 Rev. A
FMG2G400US60
1 0 0
S w it c h i n g L o s s [ m J ]
E o ff
S w it c h i n g T i m e [ n s ]
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 400A
T
C
= 25℃
━━
T
C
= 125℃ ------
1 0 0 0
Common Emitter
V
GE
=
±
15V, R
G
= 2
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
T o n
1 0
E o n
T r
1 0 0
2
4
6
8
1 0
1 2
1 4
2 8 0
3 2 0
3 6 0
C
4 0 0
G a t e R e sis t a n c e , R g [
Ω
]
C o ll e c t o r C u r r e n t , I
[ A ]
Fig 7. Switching Loss vs. Gate Resistance
Fig 8. Turn-On Characteristics vs.
Collector Current
S w it c h i n g T i m e [ n s ]
S w it c h i n g L o s s [ m J ]
1 0 0 0
Common Emitter
V
GE
=
±
15V, R
G
= 2
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
1 0 0
Common Emitter
V
GE
=
±
15V, R
G
= 2
Ω
T
C
= 25℃
━━
T
C
= 125℃ ------
E o ff
T o ff
1 0
E o n
T f
1 0 0
2 8 0
3 2 0
C
3 6 0
4 0 0
1
2 8 0
3 2 0
3 6 0
C
4 0 0
C o ll e c t o r C u r r e n t , I
[ A ]
C o ll e c t o r C u r r e n t , I
[ A ]
Fig 9. Turn-Off Characteristics vs.
Collector Current
Fig 10. Switching Loss vs. Collector Current
1 5
Common Emitter
I
C
= 400A
V
CC
= 300V
T
C
= 25 C
o
8 0 0
Common Cathode
V
GE
= 0V
T
C
= 25℃
T
C
= 125℃
[ V ]
1 2
G a t e - E m itt e r V o lt a g e , V
G E
9
6
C u rr e n t, I
F o r w a r d
F
[ A ]
6 0 0
4 0 0
3
2 0 0
0
0
0
2 0 0
4 0 0
6 0 0
g
8 0 0
1 0 0 0
1 2 0 0
0
1
2
3
4
G a t e C h a r g e , Q
[ n C ]
F o r w a r d
V o lt a g e ,
V
F
[ V ]
Fig 11. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Fig 12. Forward Characteristics (diode)
FMG2G400US60 Rev. A
FMG2G400US60
P e a k R e v e r s e R e c o v e r y C u rr e n t, I
[ A ]
rr
R e v e r s e R e c o v e r y T i m e , T
[ x 1 0 n s ]
1 0 0
Common Cathode
di/dt = 800A/㎲
T
C
= 25℃
T
C
= 100℃
I
rr
rr
1 0
t
rr
0
5 0
1 0 0
1 5 0
2 0 0
2 5 0
F
3 0 0
3 5 0
4 0 0
4 5 0
F o r w a r d
C u rr e n t, I
[ A ]
Fig 13. Reverse Recovery Characteristics(diode)
©2003 Fairchild Semiconductor Corporation
FMG2G400US60 Rev. A
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