FMG1G75US60H
IGBT
FMG1G75US60H
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
UL Certified No. E209204
Short Circuit rated 10us @ T
C
= 100°C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 75A
High Input Impedance
Fast & Soft Anti-Parallel FWD
Package Code : 7PM-GA
E1/C2
Application
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
C1
E2
G1
E1
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
V
iso
Mounting
Torque
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Curent
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ AC 1minute
FMG1G75US60H
600
±
20
75
150
75
150
10
310
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2002 Fairchild Semiconductor Corporation
FMG1G75US60H Rev. A
FMG1G75US60H
Electrical Characteristics of IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
±
100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
V
GE
= 0V, I
C
= 75mA
I
C
= 75A
,
V
GE
= 15V
5.0
--
6.0
2.2
8.5
2.8
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
7056
672
180
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
20
40
70
110
1.4
1.7
3.1
20
50
80
250
1.6
3.0
4.6
--
310
62
130
--
--
--
200
--
--
--
--
--
--
--
--
--
--
--
350
--
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
us
nC
nC
nC
V
CC
= 300 V, I
C
= 75A,
R
G
= 3.3Ω, V
GE
= 15V
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 75A,
R
G
= 3.3Ω, V
GE
= 15V
Inductive Load, T
C
= 125°C
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100°C
V
CE
= 300 V, I
C
= 75A,
V
GE
= 15V
©2002 Fairchild Semiconductor Corporation
FMG1G75US60H Rev. A
FMG1G75US60H
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 75A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 75A
di / dt = 150 A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
7
10
315
650
Max.
2.8
--
130
--
9
--
590
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
Typ.
--
--
0.05
--
Max.
0.4
0.9
--
190
Units
°C/W
°C/W
°C/W
g
©2002 Fairchild Semiconductor Corporation
FMG1G75US60H Rev. A
FMG1G75US60H
200
180
160
Common Emitter
T
C
= 25℃
20V
15V
12V
200
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
Collector Current, I
C
[A]
140
120
100
80
60
40
20
0
0
2
4
6
8
Vge = 10V
Collector Current, I
C
[A]
160
120
80
40
0
0.3
1
10
20
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
100
Common Emitter
V
GE
= 15V
Collector - Emitter Voltage, V
CE
[V]
V
CC
= 300V
Load Current : peak of square wave
4
150A
3
80
Load Current [A]
60
75A
2
I
C
= 40A
1
40
20
Duty cycle : 50%
Tc = 100℃
Power Dissipation = 100W
0.1
1
10
100
1000
0
0
30
60
90
120
150
0
Case Temperature, Tc [
℃
]
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
8
150A
4
Ic = 40A
0
75A
150A
4
Ic = 40A
0
0
4
8
12
16
20
75A
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
FMG1G75US60H Rev. A
FMG1G75US60H
16000
14000
12000
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cies
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
T
C
= 25 C
0
Ton
Capacitance [pF]
T
C
= 125 C
0
Switching Time [ns]
10000
8000
6000
Coes
4000
Cres
2000
0
1
10
Tr
100
10
1
10
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
T
C
= 25 C
0
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 75A
10000
T
C
= 25 C
T
C
= 125 C
0
0
1000
Switching Time [ns]
T
C
= 125 C
0
Toff
Switching Loss [uJ]
Eon
Eoff
Tf
100
1000
1
10
Gate Resistance, R
g
[
Ω
]
1
10
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
R
G
= 3.3
Ω
T
C
= 25 C
T
C
= 125 C
0
0
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
R
G
= 3.3
Ω
1000
T
C
= 25 C
T
C
= 125 C
0
0
Switching Time [ns]
100
Tr
Switching Time [ns]
Ton
Toff
Tf
Toff
Tf
100
10
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG1G75US60H Rev. A
stm32/stm8
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