FMG1G50US60H
IGBT
FMG1G50US60H
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
UL Certified No. E209204
Short Circuit rated 10us @ T
C
= 100°C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 50A
High Input Impedance
Fast & Soft Anti-Parallel FWD
Package Code : 7PM-GA
E1/C2
Application
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
C1
E2
G1
E1
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
V
iso
Mounting
Torque
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ AC 1minute
FMG1G50US60H
600
±
20
50
100
50
100
10
250
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
FMG1G50US60H
Electrical Characteristics of IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
±
100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
V
GE
= 0V, I
C
= 50mA
I
C
= 50A
,
V
GE
= 15V
5.0
--
6.0
2.2
8.5
2.8
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
3460
480
140
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
20
30
60
110
1.1
1.2
2.3
20
30
70
250
1.2
2.4
3.6
--
145
28
65
--
--
--
200
--
--
--
--
--
--
--
--
--
--
--
210
40
95
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
us
nC
nC
nC
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9Ω, V
GE
= 15V
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 50A,
R
G
= 5.9Ω, V
GE
= 15V
Inductive Load, T
C
= 125°C
V
CC
= 300 V, V
GE
= 15V
@
T
C
= 100°C
V
CE
= 300 V, I
C
= 50A,
V
GE
= 15V
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
FMG1G50US60H
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 50A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 50A
di / dt = 100 A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
5
7
225
455
Max.
2.8
--
130
--
6.5
--
422
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
Typ.
--
--
0.05
--
Max.
0.5
1.0
--
190
Units
°C/W
°C/W
°C/W
g
©2002 Fairchild Semiconductor Corporation
FMG1G50US60H Rev. A
FMG1G50US60H
140
120
Common Emitter
T
C
= 25℃
20V
15V
140
120
12V
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
Collector Current, I
C
[A]
Collector Current, I
C
[A]
8
100
80
60
40
20
0
100
80
60
40
20
0
0
2
4
6
V
GE
= 10V
1
10
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
60
Common Emitter
V
GE
= 15V
Collector - Emitter Voltage, V
CE
[V]
V
CC
= 300V
Load Current : peak of square wave
4
50
100A
Load Current [A]
40
3
50A
2
I
C
= 30A
30
20
1
10
0
-50
0
50
100
150
0
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 70W
1
10
100
1000
Case Temperature, T
C
[℃]
Frequency [KHz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
16
20
Common Emitter
T
C
= 125℃
16
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
12
12
8
8
100A
4
I
C
= 30A
0
50A
4
I
C
= 30A
0
0
4
8
100A
50A
12
16
20
0
4
8
12
16
20
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
FMG1G50US60H Rev. A
FMG1G50US60H
7000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
1000
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 50A
T
C
= 25 C
0
6000
Capacitance [pF]
5000
T
C
= 125 C
0
Ton
4000
Switching Time [ns]
Cies
Tr
100
3000
Coes
2000
Cres
1000
0
1
10
10
1
10
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 50A
T
C
= 25 C
0
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 50A
10000
T
C
= 25 C
T
C
= 125 C
0
0
Toff
Switching Loss [uJ]
1000
Switching Time [ns]
T
C
= 125 C
0
Eoff
Eon
Eoff
1000
Tf
100
1
10
Gate Resistance, R
g
[
Ω
]
1
10
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
R
G
= 5.9
Ω
T
C
= 25 C
T
C
= 125 C
0
0
1000
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
R
G
= 5.9
Ω
T
C
= 25 C
T
C
= 125 C
0
0
Switching Time [ns]
Switching Time [ns]
100
Ton
Toff
Tf
Toff
100
Tf
Tr
10
10
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
Collector Current, I
C
[A]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG1G50US60H Rev. A
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