SGL60N90DG3
IGBT
SGL60N90DG3
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for induction heating applications.
Features
•
•
•
•
High speed switching
Low saturation voltage : V
CE(sat)
= 2.0 V @ I
C
= 60A
High input impedance
Built-in fast recovery diode
Applications
Home appliances, induction heaters, induction heating JARs, and microwave ovens.
C
G
TO-264
G
C
E
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGL60N90DG3
900
±
25
60
42
120
15
180
72
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
0.69
2.08
25
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
SGL60N90DG3
Electrical Characteristics of the IGBT
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
900
--
--
--
--
--
--
1.0
± 500
V
mA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
I
C
= 60mA, V
CE
= V
GE
I
C
= 10A
,
V
GE
= 15V
I
C
= 60A
,
V
GE
= 15V
4.0
--
--
5.0
1.4
2.0
7.0
1.8
2.7
V
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
=10V
,
V
GE
= 0V,
f = 1MHz
--
--
--
6500
250
220
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600 V, I
C
= 60A,
R
G
= 51Ω, V
GE
=15V,
Resistive Load, T
C
= 25°C
V
CE
= 600 V, I
C
= 60A,
V
GE
= 15V
--
--
--
--
--
--
--
250
450
450
250
260
70
60
400
700
700
400
300
--
--
ns
ns
ns
ns
nC
nC
nC
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
R
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Instantaneous Reverse Current
C
= 25°C unless otherwise noted
Test Conditions
I
F
= 15A
I
F
= 60A
I
F
= 60A di/dt = 20 A/us
V
RRM
= 900V
Min.
--
--
--
Typ.
1.2
1.75
1.2
0.05
Max.
1.7
2.0
1.5
2
Units
V
V
us
uA
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
SGL60N90DG3
100
Common Emitter
T
C
= 25℃
20V
100
8V
9V
80
Collector Current, I
C
[A]
Collector Current, I
C
[A]
10V
15V
80
Common Emitter
V
GE
= 15V
T
C
= 25℃
━━
T
C
= 125℃ ------
60
7V
60
40
40
20
V
GE
= 6V
0
0
1
2
3
4
5
20
0
0
1
2
3
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
3
Common Emitter
V
GE
= 15V
80A
60A
10
Common Emitter
T
C
= -40℃
Collector-Emitter Voltage, V
CE
[V]
Collector-Emitter Voltage, V
CE
[V]
8
2
30A
I
C
= 10A
1
6
4
30A
60A
80A
2
I
C
= 10A
0
-50
0
50
100
150
0
4
8
12
16
20
Case Temperature, T
C
[
℃
]
Gate-Emitter Voltage, V
GE
[V]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Saturation Voltage vs. V
GE
10
Common Emitter
T
C
= 25℃
10
Common Emitter
T
C
= 125℃
Collector-Emitter Voltage, V
CE
[V]
6
Collector-Emitter Voltage, V
CE
[V]
8
8
6
30A
4
60A
80A
2
I
C
= 10A
0
30A
4
60A
80A
2
I
C
= 10A
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
SGL60N90DG3 Rev. A1
SGL60N90DG3
10000
10000
Cies
V
CC
= 600V
I
C
= 60A
V
GE
=
±
15V
T
C
= 25
℃
Capacitance [pF]
1000
Switching Time [ns]
1000
Tr
Tf
100
Tdoff
Tdon
Coes
100
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
0.1
1
10
Cres
10
0
50
100
150
200
Collector-Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs.
Gate Resistance
1000
V
CC
= 600V
R
G
= 51Ω
V
GE
=
±
15V
T
C
= 25
℃
Tdoff
15
Gate-Emitter Voltage, V
GE
[V]
12
Common Emitter
V
CC
= 600V, R
L
= 10Ω
T
C
= 25℃
Swing Time [ns]
9
Tr
Tdon
Tf
6
3
100
10
20
30
40
50
60
0
0
100
200
300
Collector Current, I
C
[A]
Gate Charge, Q
g
[nC]
Fig 9. Switching Characteristics vs.
Collector Current
Fig 10. Gate Charge Characteristics
10
I
C
MAX. (Pulsed)
100
10us
100us
10
10ms
DC Operation
1ms
Thermal Response, Zthjc [ C/W]
I
C
MAX. (Continuous)
Collector Current , I
C
[A]
o
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
Pdm
t1
1
Single Nonrepetitive Pulse
T
C
= 25℃
Curve must be darated
linearly with increase
in temperature
1
10
100
1000
single pulse
1E-3
10
-4
0.1
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, V
CE
[V]
Rectangular Pulse Duration [sec]
Fig 11. SOA Characteristics
Fig 12. Transient Thermal Impedance of IGBT
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
SGL60N90DG3
100
Reverse Recovery Time, t
rr
[us]
T
C
= 25℃
━━
T
C
= 100℃ ------
1.2
I
F
= 60A
T
C
= 25℃
120
Reverse Recovery Current, I
rr
[A]
1.0
100
Forward Current, I
F
[A]
10
0.8
t
rr
0.6
80
60
1
0.4
40
0.2
I
rr
0.0
20
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
40
80
120
160
200
240
Forward Voltage, V
FM
[V]
di/dt [A/㎲ ]
Fig 13. Forward Characteristics
Fig 14. Reverse Recovery Characteristics
vs. di/dt
1.6
16
di/dt = -20A/㎲
T
C
= 25℃
14
12
10
t
rr
8
6
4
2
0
10
20
30
40
50
60
1000
Reverse Recovery Time, t
rr
[us]
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
C
= 25℃
━━
T
C
= 150℃ ------
Reverse Recovery Current, I
rr
[A]
100
Reverse Curent, I
R
[uA]
10
1
I
rr
0.1
0.01
1E-3
0
300
600
900
Forward Current, I
F
[A]
Reverse Voltage, V
R
[V]
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
Fig 16. Reverse Current vs. Reverse Voltage
250
T
C
= 25
℃
200
Capacitance, C
j
[pF]
150
100
50
0
0.1
1
10
100
Reverse Voltage, V
R
[V]
Fig 17. Junction capacitance
©2002 Fairchild Semiconductor Corporation
SGL60N90DG3 Rev. A1
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