ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
• Fast switching
• r
DS(ON)
= 0.0019
Ω
(Typ), V
GS
= 10V
• r
DS(ON)
= 0.0027
Ω
(Typ), V
GS
= 4.5V
• Q
g
(Typ) = 110nC, V
GS
= 5V
• Q
gd
(Typ) = 31nC
• C
ISS
(Typ) = 11000pF
Applications
• DC/DC converters
SOURCE
DRAIN
GATE
D
G
DRAIN
(FLANGE)
S
TO-220AB
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
Parameter
Ratings
30
±
20
75
75
Figure 4
345
2.3
-55 to 175
Units
V
V
A
A
A
W
W/
o
C
o
C
I
D
P
D
T
J
, T
STG
Thermal Characteristics
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220
0.43
62
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
N302AP
Device
ISL9N302AP3
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
ISL9N302AP3
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250
µ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
T
C
= 150
o
V
GS
=
±
20V
30
-
-
-
-
-
-
-
-
1
250
±
100
V
µ
A
nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250
µ
A
I
D
= 75A, V
GS
= 10V
I
D
= 75A, V
GS
= 4.5V
1
-
-
-
3
0.0019 0.0025
0.0027 0.0033
V
Ω
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
(V
GS
= 4.5V)
-
-
V
DD
= 15V, I
D
= 28A
V
GS
= 4.5V, R
GS
= 1.5
Ω
-
-
-
-
(V
GS
= 10V)
-
V
DD
= 15V, I
D
= 28A
V
GS
= 10V, R
GS
= 1.5
Ω
-
-
-
-
-
-
16
120
70
30
-
204
-
-
-
-
150
ns
ns
ns
ns
ns
ns
-
29
120
45
34
-
224
-
-
-
-
119
ns
ns
ns
ns
ns
ns
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V V = 15V
DD
V
GS
= 0V to 1V I
D
= 75A
I
g
= 1.0mA
-
-
-
-
-
-
-
11000
2000
900
200
110
12
25
31
-
-
-
300
165
18
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Switching Characteristics
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Unclamped Inductive Switching
t
AV
Avalanche Time
I
D
= 7.2A, L = 3.0mH
480
-
-
µ
s
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 75A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt = 100A/
µ
s
I
SD
= 75A, dI
SD
/dt = 100A/
µ
s
-
-
-
-
-
-
-
-
1.25
1.0
42
34
V
V
ns
nC
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
ISL9N302AP3
Typical Characteristic
1.2
80
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
60
V
GS
= 10V
0.8
V
GS
= 4.5V
40
0.6
0.4
20
0.2
0
0
25
50
75
100
125
(
o
C)
150
175
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
T
C
, CASE TEMPERATURE (
o
C)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-2
t, RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
0.01
10
-5
10
-4
10
-3
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
I
DM
, PEAK CURRENT (A)
1000
V
GS
= 10V
V
GS
= 5V
100
50
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
ISL9N302AP3
Typical Characteristic
(Continued)
150
PULSE DURATION = 80µs
125
I
D
, DRAIN CURRENT (A)
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
125
V
GS
= 3V
100
150
V
GS
= 3.5V
100
75
T
J
= 25
o
C
50
T
J
= 175
o
C
25
T
J
= -55
o
C
0
1.5
2.0
2.5
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
75
V
GS
= 4.5V
50
V
GS
= 10V
25
T
C
= 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
I
D
= 75A
6
I
D
= 10A
4
Figure 6. Saturation Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= 10V, I
D
= 75A
0.6
-80
-40
0
40
80
120
160
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.4
V
GS
= V
DS
, I
D
= 250µA
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
1.2
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
1.0
0.8
0.6
0.4
0.2
-80
-40
0
40
80
120
160
200
1.1
1.0
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
ISL9N302AP3
Typical Characteristic
(Continued)
20000
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
V
DD
= 15V
10000
C, CAPACITANCE (pF)
C
ISS
= C
GS
+ C
GD
C
OSS
≅
C
DS
+ C
GD
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 75A
I
D
= 28A
C
RSS
= C
GD
1000
V
GS
= 0V, f = 1MHz
500
0.1
1
10
30
2
0
0
50
100
150
200
250
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 11. Capacitance vs Drain to Source
Voltage
1000
V
GS
= 4.5V, V
DD
= 15V, I
D
= 28A
800
SWITCHING TIME (ns)
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
1400
V
GS
= 10V, V
DD
= 15V, I
D
= 28A
1200
SWITCHING TIME (ns)
1000
800
t
d(OFF)
600
t
f
400
t
r
200
0
t
d(ON)
0
10
20
30
40
50
600
t
r
t
f
400
t
d(OFF)
200
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Test Circuits and Waveforms
V
DS
t
P
L
I
AS
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
0V
R
G
-
BV
DSS
V
DS
V
DD
+
V
DD
I
AS
0.01Ω
0
t
AV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. B January 2002
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