ISL9N302AS3ST
April 2002
ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Features
• Fast switching
• r
DS(ON)
= 0.0019Ω (Typ), V
GS
= 10V
• r
DS(ON)
= 0.0027Ω (Typ), V
GS
= 4.5V
• Q
g
(Typ) = 110nC, V
GS
= 5V
• Q
gd
(Typ) = 31nC
• C
ISS
(Typ) = 11000pF
Applications
• DC/DC converters
DRAIN
(FLANGE)
D
GATE
SOURCE
G
S
TO-263AB
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
I
D
Continuous (T
C
=
Pulsed
P
D
T
J
, T
STG
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
100
o
C,
o
Parameter
Ratings
30
±20
75
75
o
Units
V
V
A
A
A
A
W
W/
o
C
o
V
GS
= 4.5V)
Continuous (T
C
= 25 C, V
GS
= 10V, R
θJA
= 43 C/W)
28
Figure 4
345
2.3
-55 to 175
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in copper pad area
2
0.43
62
43
o
o
o
C/W
C/W
C/W
Package Marking and Ordering Information
Device Marking
N302AS
Device
ISL9N302AS3ST
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
©2002 Fairchild Semiconductor Corporation
Rev. B1,April 2002
ISL9N302AS3ST
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±20V
T
C
= 150
o
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
r
DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
GS
= V
DS
, I
D
= 250µA
I
D
= 75A, V
GS
= 10V
I
D
= 75A, V
GS
= 4.5V
1
-
-
-
3
V
Ω
0.0019 0.0023
0.0027 0.0033
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V V = 15V
DD
V
GS
= 0V to 1V I
D
= 75A
I
g
= 1.0mA
-
-
-
-
-
-
-
11000
2000
900
200
110
12
25
31
-
-
-
300
165
18
-
-
pF
pF
pF
nC
nC
nC
nC
nC
Switching Characteristics
(V
GS
= 4.5V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 15V, I
D
= 28A
V
GS
= 4.5V, R
GS
= 1.5Ω
-
-
-
-
-
-
-
29
120
45
34
-
224
-
-
-
-
119
ns
ns
ns
ns
ns
ns
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 15V, I
D
= 28A
V
GS
= 10V, R
GS
= 1.5Ω
-
-
-
-
-
-
-
16
120
70
30
-
204
-
-
-
-
150
ns
ns
ns
ns
ns
ns
Unclamped Inductive Switching
t
AV
Avalanche Time
I
D
= 7.2A, L = 3.0mH
480
-
-
µs
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 75A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt = 100A/µs
I
SD
= 75A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
42
34
V
V
ns
nC
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
ISL9N302AS3ST
Typical Characteristic
1.2
80
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
60
V
GS
= 10V
0.8
V
GS
= 4.5V
40
0.6
0.4
20
0.2
0
0
25
50
75
100
125
o
0
150
175
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE ( C)
T
C
, CASE TEMPERATURE (
o
C)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Z
θJC
, NORMALIZED
THERMAL IMPEDANCE
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
x R
θJC
+ T
C
10
-2
t , RECTANGULAR PULSE DURATION (s)
10
-1
10
0
10
1
0.01
10
-5
10
-4
10
-3
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
T
C
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
175 - T
C
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
I
DM
, PEAK CURRENT (A)
1000
V
GS
= 10V
V
GS
= 5V
100
50
10
-5
10
-4
10
-3
10
-2
t, PULSE WIDTH (s)
10
-1
10
0
10
1
Figure 4. Peak Current Capability
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
ISL9N302AS3ST
Typical Characteristic
(Continued)
150
PULSE DURATION = 80µs
125
I
D
, DRAIN CURRENT (A)
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
, DRAIN CURRENT (A)
125
V
GS
= 3V
100
150
V
GS
= 3.5V
100
75
T
J
= 25
o
C
50
T
J
= 175
o
C
25
T
J
=
0
1.5
2.0
2.5
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
75
V
GS
= 4.5V
50
V
GS
= 10V
T
C
= 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
25
0
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
10
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
8
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
I
D
= 75A
6
I
D
= 10A
4
Figure 6. Saturation Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
V
GS
= 10V, I
D
= 75A
0.6
-80
-40
0
40
80
120
160
200
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 7. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.4
V
GS
= V
DS
, I
D
= 250µA
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
Figure 8. Normalized Drain to Source On
Resistance vs Junction Temperature
1.2
I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.0
0.8
0.6
0.4
1.1
1.0
0.2
-80
-40
0
40
80
120
160
200
0.9
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 9. Normalized Gate Threshold Voltage vs
Junction Temperature
Figure 10. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
ISL9N302AS3ST
Typical Characteristic
(Continued)
20000
V
GS
, GATE TO SOURCE VOLTAGE (V)
10
V
DD
= 15V
8
10000
C, CAPACITANCE (pF)
C
ISS
= C
GS
+ C
GD
C
OSS
≅
C
DS
+ C
GD
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 75A
I
D
= 28A
C
RSS
= C
GD
1000
V
GS
= 0V, f = 1MHz
500
0.1
1
10
30
2
0
0
50
100
150
200
250
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Figure 11. Capacitance vs Drain to Source
Voltage
1000
V
GS
= 4.5V, V
DD
= 15V, I
D
= 28A
800
SWITCHING TIME (ns)
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
1400
V
GS
= 10V, V
DD
= 15V, I
D
= 28A
1200
SWITCHING TIME (ns)
1000
800
t
d(OFF)
600
t
f
400
t
r
200
0
t
d(ON)
0
10
20
30
40
50
600
t
r
t
f
400
t
d(OFF)
200
t
d(ON)
0
0
10
20
30
40
50
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Test Circuits and Waveforms
V
DS
t
P
L
I
AS
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
DUT
t
P
0V
R
G
-
BV
DSS
V
DS
V
DD
+
V
DD
I
AS
0.01Ω
0
t
AV
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. B1 April 2002
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