ISL9K860P3
April 2002
ISL9K860P3
8A, 600V Stealth™ Dual Diode
General Description
The ISL9K860P3 is a Stealth™ dual diode optimized
for low loss performance in high frequency hard
switched applications. The Stealth™ family exhibits low
reverse recovery current (I
RRM
) and exceptionally soft
recovery under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
• Soft Recovery. . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 2.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . t
rr
< 25ns
• Operating Temperature . . . . . . . . . . . . . . . 175
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
JEDEC TO-220AB
Symbol
K
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
A
1
A
2
Device Maximum Ratings (per leg)
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 147 C)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
o
Ratings
600
600
600
8
16
16
100
85
20
-55 to 175
300
260
Units
V
V
V
A
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
ISL9K860P3
Package Marking and Ordering Information
Device Marking
K860P3
Device
ISL9K860P3
Package
TO-220AB
Tape Width
-
Quantity
-
Electrical Characteristics (per leg)
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
I
R
Instantaneous Reverse Current
V
R
= 600V
T
C
= 25°C
T
C
= 125°C
-
-
-
-
100
1.0
µA
mA
On State Characteristics
V
F
Instantaneous Forward Voltage
I
F
= 8A
T
C
= 25°C
T
C
= 125°C
-
-
2.0
1.6
2.4
2.0
V
V
Dynamic Characteristics
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
30
-
pF
Switching Characteristics
t
rr
t
rr
I
RRM
Q
RR
t
rr
S
I
RRM
Q
RR
t
rr
S
I
RRM
Q
RR
dI
M
/dt
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovery Charge
Maximum di/dt during t
b
I
F
= 1A, dI
F
/dt = 100A/µs, V
R
= 30V
I
F
= 8A, dI
F
/dt = 100A/µs, V
R
= 30V
I
F
= 8A,
dI
F
/dt = 200A/µs,
V
R
= 390V, T
C
= 25°C
I
F
= 8A,
dI
F
/dt = 200A/µs,
V
R
= 390V,
T
C
= 125°C
I
F
= 8A,
dI
F
/dt = 600A/µs,
V
R
= 390V,
T
C
= 125°C
-
-
-
-
-
-
-
-
-
-
-
-
-
18
21
28
3.2
50
77
3.7
3.4
150
53
2.5
6.5
195
500
25
30
-
-
-
-
-
-
-
-
-
-
-
-
A
nC
A/µs
A
nC
ns
ns
ns
ns
A
nC
ns
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220
-
-
-
-
1.75
62
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
ISL9K860P3
Typical Performance Curves
16
14
I
F
, FORWARD CURRENT (A)
12
10
8
100
o
C
6
4
2
0
0.1
100
175 C
150
o
C
25
o
C
125
o
C
I
R
, REVERSE CURRENT (µA)
150
o
C
10
125
o
C
o
100
175
o
C
100
o
C
1
25
o
C
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25 2.5 2.75
200
300
400
500
600
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
80
V
R
= 390V, T
J
= 125°C
70
t
b
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
t, RECOVERY TIMES (ns)
60
t, RECOVERY TIMES (ns)
50
40
30
20
10
t
a
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
0
0
2
4
6
8
10
12
14
16
I
F
, FORWARD CURRENT (A)
Figure 2. Reverse Current vs Reverse Voltage
90
V
R
= 390V, T
J
= 125°C
80
70
60
50
40
30
20
10
t
a
AT I
F
= 16A, 8A, 4A
0
100
200
300 400
500
600
900
700 800
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
1000
t
b
AT I
F
= 16A, 8A, 4A
Figure 3. t
a
and t
b
Curves vs Forward Current
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
11
V
R
= 390V, T
J
= 125°C
10
9
8
7
6
5
dI
F
/dt = 200A/µs
4
3
2
0
2
4
6
8
10
12
I
F
, FORWARD CURRENT (A)
14
16
dI
F
/dt = 500A/µs
I
RRM
, MAX REVERSE RECOVERY CURRENT (A)
14
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
dI
F
/dt = 800A/µs
V
R
= 390V, T
J
= 125°C
12
10
8
6
4
2
0
100
200
300
400
500
600
700
800
900
1000
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
I
F
= 8A
I
F
= 16A
I
F
= 4A
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
©2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
ISL9K860P3
Typical Performance Curves
(Continued)
S, REVERSE RECOVERY SOFTNESS FACTOR
6
Q
RR
, REVERSE RECOVERY CHARGE (nC)
V
R
= 390V, T
J
= 125°C
5
350
V
R
= 390V, T
J
= 125°C
300
I
F
= 16A
250
4
I
F
= 16A
I
F
= 8A
200
I
F
= 8A
3
150
I
F
= 4A
100
2
I
F
= 4A
1
100
200
300
400
500
600
700
800
900
1000
50
100
200
300
400
500
600
700
800
900
1000
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs dI
F
/dt
1200
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 8. Reverse Recovery Charge vs dI
F
/dt
10
C
J
, JUNCTION CAPACITANCE (pF)
1000
8
800
6
600
4
400
2
200
0
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
0
140
145
150
155
160
165
170
175
T
C
, CASE TEMPERATURE (
o
C)
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
1.0
THERMAL IMPEDANCE
Z
θJA
, NORMALIZED
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
Figure 11. Normalized Maximum Transient Thermal Impedance
©2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
ISL9K860P3
l.l
Test Circuits and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1
AND t
2
CONTROL I
F
L
I
F
DUT
R
G
CURRENT
SENSE
+
V
DD
-
0
0.25 I
RM
I
RM
dI
F
dt
t
a
t
rr
t
b
V
GE
t
1
t
2
MOSFET
Figure 12. t
rr
Test Circuit
Figure 13. t
rr
Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
V
DD
= 50V
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q1
R
+
I
L
V
DD
DUT
-
t
0
t
1
t
2
t
I V
I
L
V
AVL
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
©2002 Fairchild Semiconductor Corporation
ISL9K860P3 Rev. C
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