SGR15N40L / SGU15N40L
IGBT
SGR15N40L / SGU15N40L
General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench
gate structure provide superior conduction and switching
performance in comparison with transistors having a planar
gate structure. They also have wide noise immunity. These
devices are very suitable for strobe applications
Features
• High input impedance
• High peak current capability (130A)
• Easy gate drive
Application
Strobe flash.
C
C
G
G
E
D-PAK
GC E
I-PAK
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
CM (1)
P
C
T
J
T
stg
T
L
T
C
= 25°C unless otherwise noted
Description
Collector - Emitter Voltage
Gate - Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
purposes, 1/8” from case for 5 seconds
@ T
C
= 25°C
SGR / SGU15N40L
400
±
6
130
45
-40 to +150
-40 to +150
300
Units
V
V
A
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
(D-PAK)
R
θJA
(I-PAK)
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
--
Max.
3.0
50
110
Units
°C/W
°C/W
°C/W
Notes :
(2) Mounted on 1” square PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
SGR15N40L / SGU15N40L
Electrical Characteristics of the IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
I
CES
I
GES
Collector - Emitter Breakdown Voltage
Collector Cut-Off Current
G - E Leakage Voltage
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
450
--
--
--
--
--
--
10
±
0.1
V
uA
uA
On Characteristics
V
GE(th)
V
CE(sat)
G - E Threshold Voltage
C - E Saturation Current
I
C
= 1mA, V
CE
= V
GE
I
C
= 130A, V
GE
= 4.5V
0.5
2.0
1.0
4.5
1.4
8.0
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GE
= 0V, V
CE
= 30V,
f = 1MHz
--
--
--
3000
45
30
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 300V, I
C
= 130A,
V
GE
= 4.5V, R
G
= 15Ω
Resistive Load
--
--
--
--
0.08
1.4
0.1
1.1
--
--
0.5
2.0
us
us
us
us
* Notes : Recommendation of R
G
Value : R
G
≥15Ω
©2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
SGR15N40L / SGU15N40L
180
Commom Emitter
T
C
= 25℃
150
5V
4.5V
7
Common Emitter
V
GE
= 4.5V
Collector-Emitter Voltage, V
CE
[V]
4V
6
130A
5
100A
4
I
C
= 70A
3
Collector Current, I
C
[A]
120
3.5V
3V
V
GE
= 2.5V
90
60
30
0
0
2
4
6
8
2
-50
0
50
100
150
Collector-Emitter Voltage, V
CE
[V]
Case Temperature, T
C
[
℃
]
Fig 1. Typical Output Characteristics
Fig 2. Saturation Voltage vs. Case Temperature
at Variant Current Level
10
Common Emitter
T
C
= -40℃
10
Common Emitter
T
C
= 25℃
Collector-Emitter Voltage, V
CE
[V]
8
Collector-Emitter Voltage, V
CE
[V]
8
6
130A
4
100A
I
C
= 70A
2
6
130A
4
100A
I
C
= 70A
2
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
Gate-Emitter Voltage , V
GE
[V]
Gate-Emitter Voltage, V
GE
[V]
Fig 3. Saturation Voltage vs. V
GE
Fig 4. Saturation Voltage vs. V
GE
10
Common Emitter
T
C
= 125℃
10000
Cies
Collector-Emitter Voltage, V
CE
[V]
8
Capacitance [pF]
130A
6
100A
4
I
C
= 70A
1000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
100
Coes
2
Cres
0
0
1
2
3
4
5
6
10
0
10
20
30
40
Gate-Emitter Voltage, V
GE
[V]
Collector-Emitter Voltage, V
CE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Capacitance Characteristics
SGR15N40L / SGU15N40L Rev. A1
SGR15N40L / SGU15N40L
6
Common Emitter
V
CC
= 300V, R
L
= 2.2Ω
T
C
= 25℃
200
180
Gate - Emitter Voltage, V
GE
[V]
Collector Peak Current, I
CP
[A]
160
140
120
100
80
60
40
20
4
2
0
0
10
20
30
40
50
60
0
0
2
4
6
8
10
Gate Charge, Q
g
[nC]
Gate-Emitter Voltage, V
GE
[V]
Fig 7. Gate Charge Characteristics
Fig 8. Collector Current Limit vs.
Gate - Emitter Voltage Limit
©2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
SGR15N40L / SGU15N40L
Package Dimension
D-PAK
6.60
±0.20
5.34
±0.30
(0.50)
(4.34)
(0.50)
0.70
±0.20
2.30
±0.10
0.50
±0.10
0.60
±0.20
6.10
±0.20
2.70
±0.20
9.50
±0.30
0.91
±0.10
0.80
±0.20
MAX0.96
2.30TYP
[2.30±0.20]
0.76
±0.10
2.30TYP
[2.30±0.20]
0.89
±0.10
0.50
±0.10
1.02
±0.20
2.30
±0.20
(0.70)
(0.90)
(0.10)
(3.05)
6.10
±0.20
9.50
±0.30
2.70
±0.20
(2XR0.25)
0.76
±0.10
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
SGR15N40L / SGU15N40L Rev. A1
(1.00)
6.60
±0.20
(5.34)
(5.04)
(1.50)
MIN0.55
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