MJE700/701/702/703
MJE700/701/702/703
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : h
FE
= 750 (Min.) @ I
C
= -1.5 and -2.0A DC
• Complement to MJE800/801/802/803
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Sym-
bol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Parameter
Collector- Base Voltage
: MJE700/701
: MJE702/703
Value
- 60
- 80
- 60
- 80
-5
-4
- 0.1
40
150
- 55 ~ 150
Unit
s
V
V
V
V
V
A
A
W
°C
°C
R1
R2
E
Equivalent Circuit
C
B
Collector-Emitter Voltage : MJE700/701
: MJE702/703
Emitter- Base Voltage
Collector Current
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
R
1
≅
10
k
Ω
R
2
≅
0.6
k
Ω
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breakdown Voltage
: MJE700/701
: MJE702/703
Collector Cut-off Current
: MJE700/701
: MJE702/703
Collector Cut-off Current
Test Condition
I
C
= - 10mA, I
B
= 0
Min.
-60
-80
-100
-100
-100
-500
-2
750
750
100
-2.5
-2.8
-3
-1.2
-2.5
-3
V
V
V
V
V
V
Max.
Units
V
V
µA
µA
µA
µA
mA
I
CEO
V
CE
= - 60V, I
B
= 0
V
CE
= - 80V, I
B
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
V
CB
= Rated BV
CEO
, I
E
= 0
T
C
= 100°C
V
BE
= - 5V, I
C
= 0
V
CE
= - 3V, I
C
= - 1.5A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 4A
I
C
= - 1.5A, I
B
= - 30mA
I
C
= - 2A, I
B
= - 40mA
I
C
= - 4A, I
B
= - 40mA
V
CE
= - 3V, I
C
= - 1.5A
V
CE
= - 3V, I
C
= - 2A
V
CE
= - 3V, I
C
= - 4A
I
CBO
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
: MJE700/702
: MJE701/703
: ALL DEVICES
V
CE
(sat)
Collector-Emitter Saturation Voltage
: MJE700/702
: MJE701/703
: ALL DEVICES
Base-Emitter On Voltage
: MJE700/702
: MJE701/703
: ALL DEVICES
V
BE
(on)
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE700/701/702/703
Typical Characteristics
-5
10k
I
B
= -1000
µ
s
V
CE
= -3V
0 0
µ
s
I
B
= -4
00
µ
s
I
B
= -3
I
C
(A),COLLECTOR CURRENT
-4
I
B
= -900
µ
s
I
B
= -800
µ
s
I
B
= -700
µ
s
I
B
= -600
µ
s
h
FE
, DC CURRENT GAIN
-5
-3
I
B
= -500
µ
s
0
µ
s
I
B
= -20
1k
-2
I
B
= -100
µ
s
100
-1
-0
-0
-1
-2
-3
-4
10
-0.01
-0.1
-1
-10
V
CE
(V),COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-100
1000
I
C
= 500 I
B
f=0.1MHZ
I
E
=0
C
ob
[pF], CAPACITANCE
-10
100
V
BE
(sat)
-1
10
V
CE
(sat)
-0.1
-0.01
-0.1
-1
-10
1
-0.01
-0.1
-1
-10
-100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
-100
60
50
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-10
40
0
10
µ
s
1m
s
5m
s
D
.C
.
30
-1
20
MJE700/701
MJE702/703
-0.1
-1
-10
-100
-1000
10
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST
®
DISCLAIMER
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
LILENT SWITCHER
®
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
VCX™
UHC™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. G
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
