TN6717A / NZT6717
TN6717A
NZT6717
C
E
C
C
TO-226
B
E
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 1.0 A.
Sourced from Process 39.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80
80
5.0
1.2
-55 to +150
Units
V
V
V
A
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
TN6717A
1.0
8.0
50
125
Max
*NZT6717
1.0
8.0
125
Units
W
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
1997 Fairchild Semiconductor Corporation
TN6717A / NZT6717
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 100
µA,
I
E
= 0
I
E
= 100
µA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
80
80
5.0
0.1
0.1
V
V
V
µA
µA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 250 mA, V
CE
= 1.0 V
I
C
= 500 mA, V
CE
= 1.0 V
I
C
= 250 mA, I
B
= 10 mA
I
C
= 250 mA, V
CE
= 1.0 V
80
50
20
250
0.35
1.2
V
V
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
SMALL SIGNAL CHARACTERISTICS
h
fe
C
cb
Small-Signal Current Gain
Collector-Base Capacitance
I
C
= 200 mA, V
CE
= 5.0 V,
f = 20 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
2.5
25
30
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
1.0%
3
Typical Characteristics
V
CESAT
- COLLE CTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
300
250
200
25 °C
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
0.4
0.3
25 °C
V
CE
= 5V
125 °C
β
= 10
150
100
- 40 °C
0.2
125 °C
50
0
0.001
I
C
0.1
- 40 °C
0.01
0.1
- COLLECTOR CURRENT (A)
1 1.5
0
0.01
0.1
I
C
- COLLE CTOR CURRENT (A)
1
TN6717A / NZT6717
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
V
BE(O N)
- BASE-E MITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAG E (V)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
1
0.8
0.6
0.4
0.2
- 40 °C
25 °C
125 °C
Base-Emitter ON Voltage vs
Collector Current
1
- 40
°
C
β
= 10
0.8
25 °C
0.6
125 °C
0.4
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRENT ( mA)
1000
0.2
0.001
I
C
0.01
0.1
- COLLE CTOR CURRENT (A)
1
100
- COLLECTOR-BASE CAPACITANCE (pF)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
Collector-Base Capacitance
vs Collector-Base Voltage
40
V
C B
= 80V
10
f = 1 MHz
30
1
20
0.1
10
0
0
4
8
12
16
20
24
28
BO
25
f
T
- GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product
vs Collector Current
I
C
- COLLECTOR CURRENT (A)
V
CE
= 10V
C
50
75
100
125
T
A
- AMBIENT TEMPE RATURE (
°
C)
150
V
CB
- COLLECTOR-BASE VOLTAGE (V)
Safe Operating Area TO-226 / SOT-223
10
10
µ
S
*
500
400
300
200
100
0
1
DC
100
T
CO
L LE
CT
OR
µ
S
*
1.0
ms
*
DC
T
0.1
*PULSED
OPERATION
T
A
= 25 °C
AM
BIE
NT
=2
5°
LE
AD
=2
5
°C
C
LIMIT DETERMINED
BY BV
CEO
1
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
0.01
1
10
V
CE
- COLLECTOR-EMITTER VOLTAGE (V)
100
TN6717A / NZT6717
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs
Ambient Temperature
1
P
D
- POWER DISSIPATION (W)
0.75
TO-226
SOT-223
0.5
0.25
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
3
TO-226AE Tape and Reel Data
TO -226AE Packaging
Conf iguratio n:
Fi gur e 1.0
TAPE and REEL OPTION
FSCINT Label sampl e
FAIRCHIL D S EMICONDUCTOR CORPORATION
L OT:
S e Fig 2
e
.0 for va rious
HTB:B
10000
Reeli g Styles
n
CBVK741B019
QTY:
NSID:
PN2222N
SP EC:
FSCINT
SP EC RE V:
QA REV:
D/C1:
D9842
B2
Labe l
5 Reels per
Int er med iate B ox
(FSCINT)
F63TNR Label s ampl e
LOT: CBVK7 41B019
QTY: 2000
Cus tom ized
Labe l
F63TNR
Labe l
Cus tom ized
FSID: PN222N
SPEC:
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
Labe l
375m m x 267m m x 375mm
Int er med iate B ox
AMMO PACK OPTION
S e Fig 3
e
.0 for 2 Ammo
Pack Option
s
TO-226AE TNR/AMMO PACKING INF R
O MATION
Packing
Reel
Style
A
E
Qua
ntity
2,000
2,000
2,000
2,000
EOL code
D26Z
D27Z
D74Z
D75Z
Am m o
M
P
FSCINT
Labe l
327m m x 158m m x 135mm
Im med iate B ox
5 A mm o box es per
Int er med iate B ox
Uni t wei gh t
Reel weig ht wi th c om po nents
Amm o weig ht wi th c omp on en ts
= 0.300g m
= 0.868 k g
= 0.880 k g
Cus tom ized
Labe l
Max q uanti ty p er i nte rm ed iate b ox = 10,000 un its
Cus tom ized
Labe l
F63TNR
Bar c ode Label
333m m x 231m m x 183mm
Int er med iate B ox
BULK OPTION
S e Bulk P
e
acking
Informat ion tabl
e
Anti -stati c
FSCINT Bar c ode Label
(TO-226AE ) BULK PACKING INFORMATION
LEADCLIP
DIMENSION
NO L EAD CLIP
NO L EAD CLIP
NO L EADCLIP
Bub ble Sheets
EOL CO
DE
J18Z
J05Z
NO EOL
CODE
DESCRIPTION
TO-18 OPTION STD
TO-5
OPTION STD
QUANTITY
1.0 K / BOX
1.0 K / BOX
1.5 K / BOX
1,500 un its per
EO70 box for
s td o pti on
114m m x 102m m x 51mm
EO70 Im mediate B ox
TO-226 STANDARD
STRAIGHT
5 EO70 boxes pe r
Int er med iate B ox
530m m x 130m m x 83mm
Inter med iate box
Cus tomized
Label
FSCINT Labe l
7,500 un its m axim um
per interm edi at e box
for st d opt ion
©2000 Fairchild Semiconductor International
October 1999, Rev. A1
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