Datasheet> 器件分类 > 二极管> 整流二极管> MR760

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MR760: 产品描述Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon; 产品类别二极管整流二极管; 文件大小56KB，共1页; 制造商New Jersey Semiconductor; 官网地址http://www.njsemi.com

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MR760概述

Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon

MR760规格参数

参数名称	属性值
厂商名称	New Jersey Semiconductor
包装说明	O-PADB-W2
Reach Compliance Code	unknown
Is Samacsys	N
应用	GENERAL PURPOSE
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	0.9 V
JESD-30 代码	O-PADB-W2
最大非重复峰值正向电流	400 A
元件数量	1
相数	1
端子数量	2
最高工作温度	175 °C
最低工作温度	-65 °C
最大输出电流	6 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	DISK BUTTON
最大重复峰值反向电压	1000 V
最大反向电流	25 µA
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL
Base Number Matches	1

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na.

TELEPHONE: (973) 376-2922

2QS1VP!H*\L

0, NEW JERSEY 07081

(J.S.A,

Designer's™ Data Sheet

High Current Lead Mounted

Rectifiers

• Current Capacity Comparable to Chassis Mounted Rectifiers

• Very High Surge Capacity

• Insulated Case

Mechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 2.5 grams (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Lead is

Readily Solderable

• Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds

• Polarity: Cathode Polarity Band

• Shipped 1000 units per plastic bag. Available Tape and Reeled, 800 units

per reel by adding a "RL" suffix to the part number

•

Marking: R750, R751, R752, R754, R758, R760

MR750

MR751

MR752

MR754

MR756

MR758

MR760

HIGH CURRENT

LEAD MOUNTED

SILICON RECTIFIERS

50-1 000 VOLTS

DIFFUSED JUNCTION

/•^

MAXIMUM RATINGS

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Non-Repetitive Peak Reverse Voltage

(Halfwave, single phase, 60 Hz peak)

RMS Reverse Voltage

Average Rectified Forward Current

(Single phase, resistive load, 60 Hz)

See Figures 5 and 6

Non-Repetitive Peak Surge Current

(Surge applied at rated load conditions)

Operating and Storage Junction

Temperature Range

ELECTRICAL CHARACTERISTICS

Characteristic and Conditions

Maximum Instantaneous Forward Voltage Drop

= 100 Amps, Tj = 25°C)

Maximum Forward Voltage Drop

(Ip = 6.0 Amps, TA = 25°C, 3/8" leads)

Maximum Reverse Current

(Rated dc Voltage)

Tj = 25°C

Tj = 1 00°C

Symbol

MR750

MR751

100

MR752

MR754

400

MR756

600

MR758

800

MR760

1000

Unit

Volts

VRRM

RWM

200

VRSM

R(RMS)

120

240

140

480

280

720

420

960

560

1200

700

Volts

Amps

IFSM

TJ, T

stg

22 (T|_ = 60

°C, 1/8" Lead Lengths)

6.0 (T

= 60°C, P.C. Board mounting)

) (for 1 cycle)

Amps

°C

65 to +175 •

Max

1.25

0.90

1.0

Unit

Volts

n,i* r f

r!fu vM

o '°

hange tWt conditions

- P

ari

>™ter limits and package dimensions without

not.ce. Information furnished

NJ Semiconductors is believed to be both accurate and reliable at the time of going

to press. However. NJ Semiconductors assumes no responsibility for any errors or omissions discovered in its u°e

\ .Vmi-( tmductors entourages customers To verify that datasheets are current before placing orders.

MR760相似产品对比

	MR760	MR754	MR756	MR758
描述	Rectifier Diode, 1 Phase, 1 Element, 6A, 1000V V(RRM), Silicon	Rectifier Diode, 1 Phase, 1 Element, 6A, 400V V(RRM), Silicon	Rectifier Diode, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon	Rectifier Diode, 1 Phase, 1 Element, 6A, 800V V(RRM), Silicon
厂商名称	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor	New Jersey Semiconductor
包装说明	O-PADB-W2	O-PADB-W2	O-PADB-W2	O-PADB-W2
Reach Compliance Code	unknown	unknown	unknown	unknown
Is Samacsys	N	N	N	N
应用	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.9 V	0.9 V	0.9 V	0.9 V
JESD-30 代码	O-PADB-W2	O-PADB-W2	O-PADB-W2	O-PADB-W2
最大非重复峰值正向电流	400 A	400 A	400 A	400 A
元件数量	1	1	1	1
相数	1	1	1	1
端子数量	2	2	2	2
最高工作温度	175 °C	175 °C	175 °C	175 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	6 A	6 A	6 A	6 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND
封装形式	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
最大重复峰值反向电压	1000 V	400 V	600 V	800 V
最大反向电流	25 µA	25 µA	25 µA	25 µA
表面贴装	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1

MR760

MR760概述

MR760规格参数

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MR760相似产品对比

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