FA1A4ZL67-T1B,FA1A4ZL67-T1B pdf中文资料,FA1A4ZL67-T1B引脚图,FA1A4ZL67-T1B电路-Datasheet-电子工程世界

FA1A4ZL67-T1B: 产品描述Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SC-59, 3 PIN; 产品类别晶体管; 文件大小101KB，共3页; 制造商NEC(日电)

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FA1A4ZL67-T1B概述

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SC-59, 3 PIN

FA1A4ZL67-T1B规格参数

参数名称	属性值
厂商名称	NEC(日电)
零件包装代码	SC-59
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	135
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	6000 ns
最大开启时间（吨）	200 ns
Base Number Matches	1

FA1A4ZL67-T1B相似产品对比

	FA1A4ZL67-T1B	FA1A4ZL67-T2B	FA1A4ZL68-T2B	FA1A4ZL68-T1B	FA1A4ZL69-T2B	HTHG120635R200DW
描述	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SC-59, 3 PIN	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SC-59, 3 PIN	RES,SMT,METAL FOIL,35.2 OHMS,.5% +/-TOL,-2.5,2.5PPM TC,1206 CASE
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMT, 1206
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
端子数量	3	3	3	3	3	2
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMT
厂商名称	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)	NEC(日电)	-
零件包装代码	SC-59	SC-59	SC-59	SC-59	SC-59	-
针数	3	3	3	3	3	-
Is Samacsys	N	N	N	N	N	-
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	-
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	-
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	-
最小直流电流增益 (hFE)	135	135	200	200	300	-
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-
元件数量	1	1	1	1	1	-
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
极性/信道类型	NPN	NPN	NPN	NPN	NPN	-
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
表面贴装	YES	YES	YES	YES	YES	-
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	-
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	-
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	-
最大关闭时间（toff）	6000 ns	6000 ns	6000 ns	6000 ns	6000 ns	-
最大开启时间（吨）	200 ns	200 ns	200 ns	200 ns	200 ns	-
Base Number Matches	1	1	1	1	1	-

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