1N5807US, 1N5809US, 1N5811US and URS
VOID-LESS HERMETICALLY SEALED ULTRAFAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass
construction using an internal
“Category 1”
metallurgical bond. These devices are available in both
surface mount MELF and leaded package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
“B” MELF
Package (US)
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
JEDEC registered surface mount equivalent of 1N5807, 1N5809, 1N5811 series.
Void-less hermetically sealed glass package.
Quadruple-layer passivation.
Extremely robust construction.
Internal
“Category 1”
metallurgical bonds.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477.
RoHS compliant versions available (commercial grade only).
“B” MELF
Package (URS)
Also available in:
“B” Package
(axial-leaded)
1N5807, 09 and 11
APPLICATIONS / BENEFITS
Ultrafast recovery 6 amp rectifier series from 50 to 150 V.
Military, space and other high-reliability applications.
Switching power supplies or other applications requiring extremely fast switching & low forward
loss.
High forward surge current capability.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi
MicroNote 050.
MAXIMUM RATINGS
@ T
A
= 25
o
C
unless otherwise specified
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-End Cap
Figure 1
Thermal Resistance
1N5807
Working Peak Reverse Voltage:
1N5809
1N5811
(3)
Forward Surge Current
Average Rectified Output Current
o
(1)
@ T
L
= +75 C at 3/8 inch lead length
Average Rectified Output-Current
o
(2)
@ T
A
= +55 C at 3/8 inch lead length
Capacitance @ V
R
= 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
(4)
Reverse Recovery Time
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJEC
R
ӨJX
V
RWM
Value
-65 to +175
6.5
52
50
100
150
125
6.0
3.0
60
30
260
Unit
C
C/W
o
C/W
V
o
o
I
FSM
I
O1
I
O2
C
J
t
rr
T
SP
A
A
A
pF
ns
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. I
O1
is rated at T
EC
= 75 °C. Derate at 60 mA/ºC for T
EC
above 75 ºC.
o
2. I
O2
is derated at 25 mA/ºC above T
A
= 55 C for PC boards where thermal resistance from mounting
o
point to ambient is sufficiently controlled where T
J(max)
175 C is not exceeded.
o
3. T
A
= 25 C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals.
4. I
F
= 1.0 A, I
RM
= 1.0 A, I
R(REC)
= .0.10 A and di/dt = 100 A/µs min.
T4-LDS-0168-1, Rev. 1 (120776)
©2012 Microsemi Corporation
Page 1 of 5
1N5807US, 1N5809US, 1N5811US and URS
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed void-less hard glass with tungsten slugs.
TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper.
MARKING: Body coated in blue with part number.
POLARITY: Cathode indicated by band.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: 539 milligrams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(See
Electrical Characteristics
table)
1N5807
US
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface mount Package Type
US = 2 Square end caps
URS = 1 Square + 1 Round end
cap
Symbol
V
BR
V
RWM
I
O
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and
a 180 degree conduction angle.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.
ELECTRICAL CHARACTERISTICS
@
T
A
= 25 ºC unless otherwise stated
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
µA
V
(BR)
TYPE
1N5807
1N5809
1N5811
Volts
60
110
160
25 C
0.875
0.875
0.875
o
MAXIMUM FORWARD
VOLTAGE
@ 4 A (8.3 ms pulse)
V
FM
Volts
125
o
C
0.800
0.800
0.800
REVERSE
CURRENT
(MAX.)
@
V
RWM
I
R
µA
o
25 C
125
o
C
5
525
5
525
5
525
SURGE
CURRENT
(MAX)
REVERSE
RECOVERY
TIME (MAX)
I
FSM
(Note 1)
Amps
125
125
125
t
rr
(Note 2)
ns
30
30
30
NOTES:
1. T
A
= 25
o
C @ I
O
= 3.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals.
2. I
F
= 1.0 A, I
RM
= 1.0 A, I
R(REC)
= 0.10 A and di/dt = 100 A/µs min.
T4-LDS-0168-1, Rev. 1 (120776)
©2012 Microsemi Corporation
Page 2 of 5
1N5807US, 1N5809US, 1N5811US and URS
GRAPHS
Theta (
o
C/W)
Heating Time (sec)
FIGURE 1
Maximum Thermal Impedance
P
O
(W)
I
O
(A)
FIGURE 2
Rectifier Power vs I
O
(Average Forward Current)
T4-LDS-0168-1, Rev. 1 (120776)
©2012 Microsemi Corporation
Page 3 of 5
1N5807US, 1N5809US, 1N5811US and URS
GRAPHS (continued)
Thermal Resistance (
o
C/W)
Pad Area per Pad (sq in)
FIGURE 3
Thermal Resistance vs FR4 Pad Area At Ambient
PCB horizontal (for each pad) with 1, 2, and 3 oz copper
I
F
(V)
V
F
(V)
FIGURE 4
Forward Voltage vs Forward Current
T4-LDS-0168-1, Rev. 1 (120776)
©2012 Microsemi Corporation
Page 4 of 5
1N5807US, 1N5809US, 1N5811US and URS
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions are pre-solder dip.
4. Minimum clearance of glass body to mounting surface on all
orientations.
5. Cathode marking to be either in color band, three dots spaced equally
or a color dot on the face of the end tab.
6. Color dots will be .020 inch (0.51 mm) diameter minimum and those
on the face of the end tab shall not lie within .020 inch (0.51 mm) of
the mounting surface.
7. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
8. On “URS” one end cap shall be square and the other end cap shall be
round.
Ltr
BD
BL
ECT
S
DIMENSIONS
INCH
MILLIMETERS
Min
Max
Min
Max
.137
.148
3.48
3.76
.200
.225
5.08
5.72
.019
.028
0.48
0.71
.003
0.08
Notes
8
8
PAD LAYOUT
DIM
A
B
C
INCH
0.288
0.070
0.155
MILLIMETERS
7.32
1.78
3.94
NOTE:
If mounting requires adhesive separate from the solder, an additional 0.080 inch
diameter contact may be placed in the center between the pads as an optional spot
for cement.
T4-LDS-0168-1, Rev. 1 (120776)
©2012 Microsemi Corporation
Page 5 of 5
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