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SiT8209

Ultra-Performance Oscillator

Features

Any frequency between 80.000001 and 220 MHz accurate to

6 decimal places

100% pin-to-pin drop-in replacement to quartz-based oscillators

Ultra-low phase jitter: 0.5 ps (12 kHz to 20 MHz)

Frequency stability as low as ±10 PPM

Industrial or extended commercial temperature range

LVCMOS/LVTTL compatible output

Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2,

7.0 x 5.0 mm x mm

Outstanding silicon reliability of 2 FIT or 500 million hour MTBF

Pb-free, RoHS and REACH compliant

Ultra-short lead time

Applications

SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI

Express, video, Wireless

Computing, storage, networking, telecom, industrial control

Table 1. Electrical Characteristics

Parameter

Output Frequency Range

Frequency Stability

Symbol

f

F_stab

[1]

Min.

80.000001

-10

-20

-25

-50

Typ.

–

1.8

2.5

2.8

3.3

34

30

–

1.2

–

100

–

7

–

1.5

2

0.5

–

Max.

220

+10

+20

+25

+50

+70

+85

1.89

2.75

3.08

3.63

36

33

31

30

70

10

55

60

2

–

10%

–

30%

250

–

10

115

10

2

3

1

+1.5

+5

Unit

MHz

PPM

°C

V

mA

µA

%

ns

Vdd

kΩ

MΩ

ms

ns

ms

ps

PPM

Pin 1, OE or

ST

Pin 1, OE or

ST

Extended Commercial

Industrial

Condition

Inclusive of Initial tolerance at 25 °C, and variations over

operating temperature, rated power supply voltage and load

Operating Temperature Range

Supply Voltage

T_use

Vdd

-20

-40

1.71

2.25

2.52

2.97

Supply voltages between 2.5V and 3.3V can be supported.

Contact

SiTime

for guaranteed performance specs for supply

voltages not specified in this table.

Current Consumption

OE Disable Current

Idd

I_OD

–

No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V

No load condition, f = 100 MHz, Vdd = 1.8V

Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled

Down

Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down

Vdd = 2.5V, 2.8V or 3.3V,

ST

= GND, output is Weakly

Pulled Down

Vdd = 1.8 V.

ST

= GND, output is Weakly Pulled Down

f <= 165 MHz, all Vdds.

f > 165 MHz, all Vdds.

15 pF load, 10% - 90% Vdd

IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)

IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)

Standby Current

I_std

–

Duty Cycle

Rise/Fall Time

Output Voltage High

Output Voltage Low

Input Voltage High

Input Voltage Low

Input Pull-up Impedance

DC

Tr, Tf

VOH

VOL

VIH

VIL

Z_in

45

40

–

90%

–

70%

–

2

Pin 1, OE logic high or logic low, or

ST

logic high

Pin 1,

ST

logic low

Measured from the time Vdd reaches its rated minimum value

f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles

In standby mode, measured from the time

ST

crosses 50% threshold. Refer to

Figure 5.

f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V

f = 156.25 MHz, Vdd = 1.8V

f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz

25°C

Startup Time

OE Enable/Disable Time

Resume Time

RMS Period Jitter

RMS Phase Jitter (random)

First year Aging

10-year Aging

T_start

T_oe

T_resume

T_jitt

T_phj

F_aging

–

-1.5

-5

Note:

1. All electrical specifications in the above table are specified with 15 pF output load and for all Vdd(s) unless otherwise stated.

Rev 1.1

January 2, 2017

www.sitime.com

SiT8209

Ultra-Performance Oscillator

Table 2. Pin Configuration

Symbol

Output

Enable

1

OE/ ST

Standby

2

3

4

Notes:

2. A pull-up resistor of <10 kΩ between OE/ ST pin and Vdd is recommended in high noise environment.

3. A capacitor of value 0.1 µF between Vdd and GND is recommended.

GND

OUT

VDD

Power

Output

Power

[2]

Functionality

H or Open : specified frequency output

L: output is high impedance. Only output driver is disabled.

H or Open

:

specified frequency output

L: output is low (weak pull down). Device goes to sleep mode.

Supply current reduces to I_std.

Electrical ground

Oscillator output

Power supply voltage

[3]

[2]

Top View

OE/ST

1

4

VDD

GND

2

3

OUT

Figure 1. Pin Assignments

Table 3. Absolute Maximum

Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part.

Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.

Parameter

Storage Temperature

VDD

Electrostatic Discharge

Soldering Temperature (follow standard Pb free soldering guidelines)

Junction Temperature

Min.

-65

-0.5

–

Max.

150

4

2000

260

150

Unit

°C

V

°C

Table 4. Thermal Consideration

Package

7050

5032

3225

2520

θ

JA, 4 Layer Board (°C/W)

191

97

109

117

θ

JA, 2 Layer Board (°C/W)

263

199

212

222

θ

JC, Bottom (°C/W)

30

24

27

26

Table 5. Environmental Compliance

Parameter

Mechanical Shock

Mechanical Vibration

Temperature Cycle

Solderability

Moisture Sensitivity Level

Condition/Test Method

MIL-STD-883F, Method 2002

MIL-STD-883F, Method 2007

JESD22, Method A104

MIL-STD-883F, Method 2003

MSL1 @ 260°C

Rev. 1.1

Page 2 of 15

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SiT8209

Ultra-Performance Oscillator

Phase Noise Plot

-40

-60

Integrated random phase jitter (12kHz to 20MHz): 0.49 ps,RMS

Phase noise (dBc/Hz)

-80

-100

-120

-140

-160

3

4

5

6

7

10

Frequency offset (Hz)

Figure 2. Phase Noise, 156.25 MHz, 3.3V, LVCMOS Output

Test Circuit and Waveform

[4]

Vdd

Vout

Test

Point

tr

4

Power

Supply

0.1µF

3

tf

90% Vdd

1

2

15pF

(including probe

and fixture

capacitance)

50%

10% Vdd

High Pulse

(TH)

Period

Low Pulse

(TL)

OE/ST Function

Vdd

1kΩ

Figure 3. Test Circuit

Figure 4. Waveform

Notes:

4. Duty Cycle is computed as Duty Cycle = TH/Period.

5. SiT8209 supports the configurable duty cycle feature. For custom duty cycle at any given frequency, contact

SiTime.

Rev. 1.1

Page 3 of 15

www.sitime.com

SiT8209

Ultra-Performance Oscillator

Timing Diagram

Figure 5. Startup Timing (OE/ST Mode)

Figure 6. Standby Resume Timing (ST Mode Only)

Figure 6. OE Enable Timing (OE Mode Only)

Figure 7. OE Disable Timing (OE Mode Only)

Notes:

6. SiT8209 supports NO RUNT pulses and No glitches during startup or resume.

7. SiT8209 supports gated output which is accurate within rated frequency stability from the first cycle.

Rev. 1.1

Page 4 of 15

www.sitime.com

SiT8209

Ultra-Performance Oscillator

Performance Plots

[8]

3.3V

3.00

2.50

2.5V

1.8V

3.3V

40.0

38.0

36.0

34.0

32.0

30.0

28.0

26.0

24.0

22.0

20.0

80

100

120

2.5V

1.8V

RMS Period jitter, ps

140

160

180

200

220

2.00

1.50

1.00

0.50

0.00

80

Idd, mA

100

120

140

160

180

200

220

Frequency, MHz

Figure 8. Idd vs Frequency

Figure 9. RMS Period Jitter vs Frequency

3.3V

60.0

58.0

54.0

52.0

50.0

48.0

46.0

44.0

42.0

40.0

80

100

120

56.0

2.5V

1.8V

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

80

100

120

2.5V

3.3V

1.8V

140

160

180

200

220

RMS Phase jitter, ps

Duty cycle, %

140

160

180

200

220

Frequency, MHz

Figure 10. Duty Cycle vs Frequency

Figure 11. RMS Phase Jitter vs Frequency

1.8V

35

33

2.5V

3.3V

2.0

1.8V (10%-90%)

1.8V (20%-80%)

2.5V (10%-90%)

2.5V (20%-80%)

3.3V (10%-90%)

3.3V (20%-80%)

1.5

31

29

27

25

-40

Rise Time, ns

-20

0

20

40

60

80

Idd, mA

1.0

0.5

Temperature, °C

0.0

-40

-20

0

20

40

60

80

Temperature, °C

Figure 12. Idd vs Temperature, 100 MHz Output

Figure 13. Rise Time vs Temperature, 100 MHz Output

Note:

8. All plots are measured with 15pF load at room temperature, unless otherwise stated.

Rev. 1.1

Page 5 of 15

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SIT8209AC-3F-28E-133.333333T

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