74VHC240FT,74VHC244FT
CMOS Digital Integrated Circuits Silicon Monolithic
74VHC240FT,74VHC244FT
1. Functional Description
• Octal Bus Buffer
74VHC240FT: INVERTED, 3-STATE OUTPUTS
74VHC244FT: NON-INVERTED, 3-STATE OUTPUTS
2. General
The 74VHC240FT and 74VHC244FT are advanced high speed CMOS OCTAL BUS BUFFERs fabricated with
silicon gate C
2
MOS technology.
They achieve the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
The 74VHC240FT is an inverting 3-state buffer having two active-low output enables. The 74VHC244FT is a
non-inverting 3-state buffer, and has two active-low output enables.
These devices are designed to be used with 3-state memory address drivers, etc.
An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply
voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up.
This circuit prevents device destruction due to mismatched supply and input voltages.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature range: T
opr
= -40 to 125
High speed: t
pd
= 3.9 ns (typ.) at V
CC
= 5 V
Low power dissipation: I
CC
= 4.0
µA
(max) at T
a
= 25
High noise immunity: V
NIH
= V
NIL
= 28 % V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 5.5 V
Low noise: V
OLP
= 0.8 V (max)
(10) Pin and function compatible with the 74 series (AC/HC/AHC/LV etc.) 240 or 244 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Start of commercial production
©2016 Toshiba Corporation
1
2013-03
2016-08-18
Rev.4.0
74VHC240FT,74VHC244FT
4. Packaging
TSSOP20B
5. Pin Assignment
74VHC240FT
74VHC244FT
6. Marking
74VHC240FT
74VHC244FT
©2016 Toshiba Corporation
2
2016-08-18
Rev.4.0
74VHC240FT,74VHC244FT
7. IEC Logic Symbol
74VHC240FT
74VHC244FT
8. Truth Table
Input G
L
L
H
Input A
n
L
H
X
Output Y
n
L
H
Z
Output Y
n
H
L
Z
X:
Z:
Yn:
Yn:
Don't care
High impedance
74VHC244FT
74VHC240FT
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±75
180
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
©2016 Toshiba Corporation
3
2016-08-18
Rev.4.0
74VHC240FT,74VHC244FT
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
V
CC
= 3.3
±
0.3 V
V
CC
= 5
±
0.5 V
Test Condition
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 100
0 to 20
Unit
V
V
V
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.36
0.36
±0.25
±0.1
4.0
µA
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
4
2016-08-18
Rev.4.0
74VHC240FT,74VHC244FT
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.48
3.80
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.44
0.44
±2.50
±1.0
40.0
µA
µA
µA
V
V
V
Unit
V
11.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
I
OZ
I
IN
I
CC
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
5.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.40
3.70
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.55
0.55
±10.0
±2.0
80.0
µA
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-08-18
Rev.4.0
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