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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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SB120-SB1100
SB120 - SB1100
Features
•
•
1.0 ampere operation at T
A
= 75°C
with no thermal runaway.
For use in low voltage, high frequency
inverters free wheeling, and polarity
protection applications.
DO-41
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
120
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
20
130
30
140
40
Value
150
50
1.0
30
-65 to +125
-65 to +125
160
60
180
80
1100
100
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
1.25
80
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
I
R
I
rr
C
T
T
A
= 25°C unless otherwise noted
Parameter
120 130
Forward Voltage @ 1.0 A
T
A
= 25°C
T
A
= 100°C
Maximum Full Load Reverse Current, Full Cycle
T
A
= 75°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
Reverse Current @ rated V
R
500
140
Device
150
0.5
10
30
110
160
180 1100
850
700
Units
mV
mA
mA
mA
pF
2001
Fairchild Semiconductor Corporation
SB120-SB1100, Rev. C
SB120-SB1100
Schottky Rectifier
(continued)
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
1
20
10
SB120
0.75
SINGLE PHASE
HALF WAVE
60Hz
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5mm
LEAD LENGTHS
Forward Current, I
F
[A]
SB1100
0.5
1
SB150-SB160
0.25
0
T
J
= 25
º
C
Pulse Width = 300µS
µ
1% Duty Cycle
0
20
40
60
80
100
Lead Temperature [ºC]
120
140
0.1
0.2
0.4
0.6 0.8
1
1.2 1.4 1.6
Forward Voltage, V
F
[V]
1.8
2
Figure 1. Forward Current Derating Curve
Figure 2. Forward Voltage Characteristics
Peak Forward Surge Current, I
FSM
[A]
30
Total Capacitance, C
T
[pF]
400
200
T
J
= 25
º
C
24
18
100
80
60
40
20
10
0.1
12
6
0
1
2
4 6 8 10
20
40 60
Number of Cycles at 60Hz
100
0.5 1
5 10
Reverse Voltage, V
R
[V]
40 60 100
Figure 3. Non-Repetitive Surge Current
Figure 4. Total Capacitance
2001
Fairchild Semiconductor Corporation
SB120-SB1100, Rev. C
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2
CMOS
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This datasheet contains the design specifications for
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Rev. H4
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