SK54B
Technical Data
Data Sheet N0105, Rev. B
SK54B SCHOTTKY RECTIFIER
Features
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Green products in compliance the ROHS directive
This is a Pb - Free device
All SMC parts are traceable to the wafer lo
t
Additional testing can be offered upon request
SMB
Circuit Diagram
Applications
Switching power supply
Converters
Free-Wheeling diodes
Reverse battery protection
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward
Current
Peak One Cycle Non-Repetitive
Surge Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FRM
I
FSM
Condition
-
Max.
40
5
10
125
Units
V
A
A
A
50% duty cycle @T
C
=105°C, rectangular
wave form
At Rated V
R
, Square Wave, 20KHZ,
T
C
=80℃
8.3ms, Half Sine pulse, T
c
= 25
C
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Junction Capacitance
Series Inductance
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F1
V
F2
I
R1
I
R2
C
T
L
S
dv/dt
Condition
@ 5A, Pulse, T
J
= 25
C
@ 5A, Pulse, T
J
= 125
C
@V
R
= rated V
R,
T
J
= 25
C
@V
R
= rated V
R,
T
J
= 125
C
@V
R
= 5V, T
C
= 25
C,
f
SIG
= 1MHz
Measured lead to lead 5 mm from
package body
-
Typ.
0.58
0.50
0.01
8
130
8.0
-
Max.
0.65
0.63
1.0
30
240
-
10,000
Units
V
V
mA
mA
pF
nH
V/s
Voltage Rate of Change
China - Germany - Korea - Singapore - United States
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SK54B
Technical Data
Data Sheet N0105, Rev. B
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance to Lead
Typical Thermal Resistance to Ambiebt
Approximate Weight
Symbol
T
J
T
stg
R
JL
R
JA
wt
Condition
-
-
-
-
-
Specification
-55 to +150
-55 to +150
17
75
0.09
Units
C
C
C/W
C/W
g
Ratings and Characteristics Curves
1000
Junction Capacitance-CT(PF)
100
10
TJ=125℃
100
TJ=25℃
Reverse Current-IR(MA)
1
0.1
0.01
0.001
0.0001
0
5
10
15
20
25
30
35
40
45
Reverse Voltage-VR(V)
TJ=25℃
10
5
10
15
20
25
30
35
40
Reverse Voltage-VR(V)
Fig.1-Typical Junction Capacitance
Fig.3-Typical Junction Capacitance Vs.Reverse Voltage
Fig.2-Typical Reverse Characteristics
TJ=125℃
TJ=25℃
TJ=125℃
Fig.3-Typical Instantaneous Forward Voltage Characteristics
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SK54B
Technical Data
Data Sheet N0105, Rev. B
Mechanical Dimensions SMB
Millimeters
Min.
3.30
4.06
1.80
0.152
4.80
2.10
0.051
0.76
SYMBOL
A
B
C
D
E
F
G
H
Inches
Min.
0.130
0.160
0.071
0.006
0.189
0.083
0.002
0.030
Max.
3.94
4.70
2.20
0.305
5.59
2.60
0.203
1.52
Max.
0.155
0.185
0.087
0.012
0.220
0.102
0.008
0.060
Ordering Information
Device
SK54B
Marking Diagram
Shipping
3000pcs / reel
Where XXXXX is YYWWL
SK
5
4
B
YY
WW
L
= Device Type
= Forward Current (5A)
= Reverse Voltage (40V)
= Package type
= Year
= Week
= Lot Number
Package
SMB
(Pb-Free)
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Cautions：Molding
resin
Epoxy resin UL:94V-0
Carrier Tape Specification SMB
SYMBOL
A
B
C
d
E
F
P
P0
P1
T
W
Millimeters
Min.
Max.
2.97
5.70
2.32
1.40
1.40
5.60
3.90
3.90
1.90
0.25
3.17
5.90
2.52
1.60
1.60
5.70
4.10
4.10
2.10
0.35
11.80
12.20
China - Germany - Korea - Singapore - United States
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SK54B
Technical Data
Data Sheet N0105, Rev. B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC -
Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party.
When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
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