RN2510,RN2511
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2510, RN2511
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including twodevices in SMV (super mini type with 5 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1510 and RN1511
Unit: mm
Equivalent Circuit
SMV
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 14 mg (typ.)
Rating
−50
−50
−5
−100
300
150
−55
to150
Unit
V
V
V
mA
mW
°C
°C
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
*
T
j
T
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Equivalent Circuit
(top view)
Start of commercial production
1988-10
1
2014-03-01
RN2510,RN2511
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2510
RN2511
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test
Circuit
―
―
―
―
―
―
―
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−5V,
I
C
=
−1mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0, f = 1MHz
―
Min
―
―
120
―
―
―
3.29
7
Typ.
―
―
―
−0.1
200
3
4.7
10
Max
−100
−100
400
−0.3
―
6
6.11
13
Unit
nA
nA
―
V
MHz
pF
kΩ
2
2014-03-01
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