to GND ...............................................-0.3V
to +20V
Continuous Power Dissipation (T
A
= +70°C)
WLP (derate 23.8mW/NC above +70°C)
....................1500mW
Operating Temperature Range
...........................
-40NC to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range
............................ -60NC
to +150°C
Lead Temperature (soldering, 10s)
.................................
+300°C
Soldering Temperature (reflow)
.......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Package Thermal Characteristics
(Note 1)
Junction-to-Ambient Thermal Resistance (q
JA
)
..............42°C/W
Junction-to-Case Thermal Resistance (q
JC
)
.....................7°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutori-
al. Thermal resistance can be lowered with improved board design.
Electrical Characteristics
(V
IN
= V
CC
= 2.7V to 18V, T
A
= T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at V
IN
= 12V, R
CB
= 33.2kΩ,
and T
A
= +25°C.) (Note 2)
PARAMETER
POWER SUPPLIES
V
CC
Operating Range
IN Operating Range
V
CC
Supply Current
IN Supply Current
V
CC
Default Undervoltage
Lockout
V
CC
Default Undervoltage-
Lockout Hysteresis
REG Regulator Voltage
UV Turn-On Threshold
UV Turn-On Threshold
Hysteresis
OV Turn-On Threshold
OV Turn-On Threshold
Hysteresis
EN
Threshold
EN
Threshold Hysteresis
V
CC
V
IN
I
CC
I
IN
V
UVLO
V
UVLO_HYS
V
REG
V
UV_TH
V
UV_HYS
V
OV_TH
V
OV_HYS
V
EN_TH
V
EN_HYS
No load, V
CC
> 4V
V
UV
rising
V
UV
falling
V
OV
rising
V
OV
falling
V
EN
rising
V
EN
falling
0.95
1.21
3.15
1.21
V
IN
= 3V
R
CB
= 40.2kΩ, no load
R
CB
= 10kΩ, no load
V
CC
rising
2.35
2.7
2.7
0.5
5.1
1.4
2.5
0.1
3.35
1.23
0.1
1.23
0.1
1
0.1
1.05
1.25
3.55
1.25
18
18
0.75
6.2
1.8
2.65
V
V
mA
mA
V
V
V
V
V
V
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
www.maximintegrated.com
Maxim Integrated
│
2
MAX15090B/MAX15090C
2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
Electrical Characteristics (continued)
(V
IN
= V
CC
= 2.7V to 18V, T
A
= T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at V
IN
= 12V, R
CB
= 33.2kΩ,
and T
A
= +25°C.) (Note 2)
PARAMETER
OV, UV,
EN
Input Leakage
Current
CB Source Current
CURRENT LIMIT
Circuit-Breaker Accuracy
(Note 3)
Circuit-Breaker Accuracy
Deviation
Slow-Comparator Response
Time (Note 4)
Maximum Current Limit During
Startup
Fast-Comparator Threshold
Minimum CB Voltage Reference
During Foldback (Note 5)
Maximum CB Voltage Reference
During Foldback (Note 5)
TIMING
Startup Maximum Time Duration
Autorestart Delay Time
Time Delay Comparator High
Threshold
Time Delay Pullup Current
Output Short Detection at
Startup
MOSFET
Total On-Resistance
GATE Charge Current
R
ON
I
GATE
T
A
= +25°C
T
A
= -40°C to +85°C
4.5
5.7
5.5
7.5
9
7
mΩ
µA
t
SU
t
RESTART
V
DLY_TH
I
DLY
t
SHORT
1.85
1.6
10.8
43
48
3.2
2
1.9
12
2.15
2.2
13.2
53
ms
s
V
µA
ms
t
SCD
I
LIM_MAX
I
FC_TH
V
THCB_MIN
V
THCB_MAX
V
IN
- V
OUT
> 10V, R
CB
= 40.2kΩ
V
IN
- V
OUT
< 2V, R
CB
= 40.2kΩ
I
CB,TH
V
IN
= 12V
R
CB
= 40.2kΩ
R
CB
= 10kΩ
10.85
2.7
-10
1.5
200
0.5 x I
CB,TH
1.5 x I
CB,TH
60
12.06
3
13.27
3.3
+10
A
%
ms
µs
A
A
mV
SYMBOL
I
LEAK
I
THCB_NORM
CONDITIONS
V
OV
= V
UV
= V
EN
= 0 to 5V
Power-on mode
MIN
-1
12
TYP
MAX
+1
UNITS
µA
µA
R
CB
= 10kΩ to 40.2kΩ, compared to
nominal current-limit value
0.6% overcurrent
30% overcurrent
(see Figure 2)
240
mV
www.maximintegrated.com
Maxim Integrated
│
3
MAX15090B/MAX15090C
2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
Electrical Characteristics (continued)
(V
IN
= V
CC
= 2.7V to 18V, T
A
= T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at V
IN
= 12V, R
CB
= 33.2kΩ,
and T
A
= +25°C.) (Note 2)
PARAMETER
OUTPUTS
FAULT,
PG Output Low Voltage
FAULT,
PG Output High
Leakage Current
CURRENT REPORT
ISENSE Full-Scale Current
ISENSE Gain Ratio
ISENSE Voltage Range
ISENSE Offset Error
V
ISENSE
I
ISENSE_OFF
I
ISENSE
I
SENSE
/I
OUT
V
IN
= 12V
T
A
= +25°C
T
A
= -40°C to +85°C
T
A
= +25°C, I
OUT
= 1A,
ΔI
OUT
= 100mA
T
A
= -40°C to +85°C, I
OUT
= 1A,
ΔI
OUT
= 100mA
Measured at V
OUT
From V
OUT
> V
PG
and
(V
GATE
- V
IN
) > 3V
Measured at V
OUT
Measured at V
OUT
T
J
rising
T
J
falling
12
0
-30
-50
-2.5
-4
2.64
220
2.5
+30
+50
+2.5
%
+4
mA
µA/A
V
µA
V
OL
I
OH
Low-impedance state,
I
FAULT
= +5mA, I
PG
= +5mA
High-impedance state,
V
FAULT
= 16V, V
PG
= 16V
0.4
1
V
µA
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
ISENSE Differential Gain Error
I
ISENSE_ERROR
PG THRESHOLD
PG Threshold
PG Assertion Delay
OUT to IN Short-Circuit
Detection Threshold
OUT Precharge Threshold
THERMAL SHUTDOWN
Thermal Shutdown
Thermal-Shutdown Hysteresis
T
SD
+150
20
°C
°C
V
PG
t
PG
V
IOSHT
V
PC
0.9 x V
IN
16
0.9 x V
IN
0.5 x V
IN
V
20
V
ms
Note 2:
All devices are 100% production tested at T
A
= +25°C. Limits over temperature are guaranteed by design.
Note 3:
40.2kΩ is the maximum allowed external resistance value to be connected at CB pin to GND for safe operation. All devices
are tested with10kΩ, the parameter specified at R
CB
= 40.2kΩ is guaranteed by bench characterization and correlation, with
respect to the tested parameter at R
CB
= 10kΩ. The formula that describes the relationship between R
CB
and the circuit-
breaker current threshold is: I
CB
= R
CB
/3333.3.
Note 4:
The current-limit slow-comparator response time is weighed against the amount of overcurrent so the higher the
overcurrent condition, the faster the response time.
Note 5:
Foldback is active during the startup phase so the internal power MOSFET operates within SOA.
www.maximintegrated.com
Maxim Integrated
│ 4
MAX15090B/MAX15090C
Typical Operating Characteristics
2.7V to 18V, 12A, Hot-Swap Solution
with Current Report Output
(V
IN
= V
CC
= 2.7V to 18V, T
J
= -40°C to +85°C, unless otherwise noted. Typical values are at V
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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