d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 54 °C/W.
g. T
C
= 25 °C.
S16-2566-Rev. A, 19-Dec-16
Document Number: 75348
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR692DP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 125 V, R
L
= 6.25
,
I
D
10 A,
V
GEN
= 7.5 V, R
g
= 1
V
DD
= 125 V, R
L
= 6.25
,
I
D
10 A,
V
GEN
= 10 V, R
g
= 1
V
DS
= 125 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 125 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 125 V, V
GS
= 7.5 V, I
D
= 10 A
V
DS
= 125 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 10 mA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 250 V, V
GS
= 0 V
V
DS
= 250 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
10 V, V
GS
=10 V
V
GS
=10 V, I
D
= 10 A
V
GS
= 7.5 V, I
D
= 10 A
V
DS
= 15 V, I
D
= 10 A
MIN.
250
-
-
2
-
-
-
20
-
-
-
-
-
-
-
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
290
-7.5
-
-
-
-
-
0.052
0.053
26
1405
105
9.3
25.3
19.8
7.9
7.4
49
2
11
28
14
32
13
62
14
32
-
-
0.77
146
880
98
48
MAX.
-
-
-
4
100
1
15
-
0.063
0.067
-
-
-
-
40
30
-
-
-
3.5
22
56
28
64
26
124
28
60
24.2
50
1.1
292
1760
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2566-Rev. A, 19-Dec-16
Document Number: 75348
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR692DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
80
V
GS
= 10 V thru 7 V
V
GS
= 6 V
Vishay Siliconix
Axis Title
10000
80
10000
64
2nd line
I
D
- Drain Current (A)
64
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
T
C
= 25 °C
48
48
32
V
GS
= 5 V
32
100
100
T
C
= -55 °C
16
V
GS
= 4 V
16
T
C
= 125 °C
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.080
10000
3500
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.072
1000
1st line
2nd line
0.064
V
GS
= 7.5 V
2800
2nd line
C - Capacitance (pF)
1000
1st line
2nd line
100
700
C
rss
C
oss
2100
C
iss
0.056
100
V
GS
= 10 V
1400
0.048
0.040
0
12
24
36
48
60
I
D
- Drain Current (A)
2nd line
10
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 20 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
3.0
I
D
= 20 A
V
GS
= 10 V
10000
8
V
DS
= 100 V, 125 V, 150 V
2.5
1000
1st line
2nd line
6
1000
1st line
2nd line
100
10
2.0
V
GS
= 7.5 V
4
100
2
1.5
1.0
0
0
5
10
15
20
25
Q
g
- Total Gate Charge (nC)
2nd line
10
0.5
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-2566-Rev. A, 19-Dec-16
Document Number: 75348
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR692DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.5
Axis Title
10000
Vishay Siliconix
10
2nd line
I
S
- Source Current (A)
1000
1st line
2nd line
1
T
J
= 25 °C
2nd line
V
GS(th)
- Variance (V)
T
J
= 150 °C
0.1
I
D
= 5 mA
1000
1st line
2nd line
-0.3
0.1
100
0.01
-0.7
I
D
= 250 μA
100
-1.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
-1.5
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
0.30
I
D
= 20 A
Axis Title
10000
200
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.24
1000
2nd line
Power (W)
T
J
= 125 °C
160
1000
1st line
2nd line
1st line
2nd line
100
40
T
J
= 25 °C
0.18
120
0.12
100
0.06
80
0
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
0
0.001
10
0.01
0.1
Time (s)
2nd line
1
10
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
100
I
DM
limited
100 μs
10000
10
2nd line
I
D
- Drain Current (A)
I
D
limited
1 ms
1000
1st line
2nd line
1
10 ms
100 ms
Limited by R
DS(on) (1)
1s
10 s
0.1
100
0.01
T
a
= 25 °C
Single pulse
DC
BVDSS limited
0.001
0.01
(1)
0.1
1
10
100
10
1000
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S16-2566-Rev. A, 19-Dec-16
Document Number: 75348
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiR692DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
30
10000
Vishay Siliconix
24
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
6
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
18
12
0
Current Derating
a
Axis Title
125
10000
3.0
Axis Title
10000
100
1000
2nd line
Power (W)
1st line
2nd line
75
2nd line
Power (W)
2.4
1000
1st line
2nd line
100
0.6
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.8
50
100
25
1.2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2566-Rev. A, 19-Dec-16
Document Number: 75348
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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