• Optimizes circuit layout for bi-directional current flow
1
2
G
3 D
1
4 D
1
2
G
2
3.
3
m
m
1
3
3.
m
m
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Battery management
• Load switching
G
1
N-Channel 1 MOSFET
N-Channel 2 MOSFET
G
2
Top View
Bottom View
S
1
PRODUCT SUMMARY
V
S1S2
(V)
R
S1S2(on)
max. () at V
GS
= 10 V
R
S1S2(on)
max. () at V
GS
= 4.5 V
Q
g
typ. (nC)
I
S1S2
(A)
Configuration
30
0.005
0.007
16.1
h
60
a, g
Dual
S
2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8SCD
SiSF00DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
S1S2
V
GS
I
S1S2
I
S1S2M
P
S1S2
T
J
, T
stg
LIMIT
30
+20 / -16
60
a
60
a
25.5
b, c
20.4
b, c
120
69.4
44.4
5.2
b, c
3.3
b, c
-55 to +150
260
UNIT
V
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 100 μs)
A
T
C
= 25 °C
T
C
= 70 °C
Maximum power dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
c
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
b
Maximum junction-to-case (drain)
t
10 s
Steady state
SYMBOL
R
thJA
R
thJC
TYPICAL
19
1.4
MAXIMUM
24
1.8
UNIT
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SCD is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 63 °C/W
g. T
C
= 25 °C
h. Single MOSFET
S18-0212-Rev. A, 19-Feb-18
Document Number: 75573
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSF00DN
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
S1S2(on)
R
S1S2(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S1S2
I
S1S2M
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs, T
J
= 25 °C
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1
,
I
D
10 A,
V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1
,
I
S1S2
10 A,
V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
=10 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
V
S1S2
= V
GS
, I
D
= 250 μA
V
S1S2
= 0 V, V
GS
= +20 / -16 V
V
S1S2
= 30 V, V
GS
= 0 V
V
S1S2
= 30 V, V
GS
= 0 V, T
J
= 70 °C
V
S1S2
10 V, V
GS
= 10 V
V
GS
= 10 V, I
S1S2
= 10 A
V
GS
= 4.5 V, I
S1S2
= 5 A
V
S1S2
= 15 V, I
S1S2
= 20 A
MIN.
30
1
-
-
-
20
-
-
-
-
-
-
-
-
-
-
0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
0.0042
0.0056
130
2700
865
51
35
16.1
7
2.5
1.5
10
32
22
10
21
60
25
15
-
-
42
42
23
19
MAX.
-
2.1
100
1
15
-
0.0050
0.0070
-
-
-
-
53
24.2
-
-
3
20
65
45
20
45
120
50
30
60
120
85
85
-
-
ns
nC
pF
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b, c
V
nA
μA
A
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
c
Continuous source-drain diode current
Pulse diode forward current
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
c. On single MOSFET
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0212-Rev. A, 19-Feb-18
Document Number: 75573
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSF00DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
120
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
120
100
1000
1st line
2nd line
2nd line
I
S1S2
- Drain Current (A)
80
60
40
20
0
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
2nd line
1000
1st line
2nd line
100
T
C
= -55 °C
10000
100
2nd line
I
S1S2
- Drain Current (A)
80
60
V
GS
= 3 V
T
C
= 25 °C
40
20
0
0
0.5
1
1.5
2
2.5
3
V
S1S2
- Drain-to-Source Voltage (V)
2nd line
100
T
C
= 125 °C
10
10
Output Characteristics
Transfer Characteristics
Axis Title
0.008
10000
3500
3000
2nd line
R
S1S2(on)
- On-Resistance (Ω)
2nd line
C - Capacitance (pF)
0.006
V
GS
= 4.5 V
Note: for one channel only
Axis Title
10000
C
iss
1000
1st line
2nd line
0.004
V
GS
= 10 V
2500
2000
1500
C
oss
1000
1st line
2nd line
100
C
rss
100
0.002
1000
500
0
0
20
40
60
80
100
I
S1S2
- Drain Current (A)
2nd line
10
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Note: for
Axis Title
one channel only
Axis Title
2nd line
R
S1S2(on)
- On-Resistance (Normalized)
10000
1.6
I
D
= 10 A
V
GS
= 10 V
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
10000
8
V
DS
= 15 V
1.4
1000
V
GS
= 4.5 V
1000
1st line
2nd line
6
V
DS
= 7.5 V
V
DS
= 24 V
4
100
2
1.0
100
0.8
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
S18-0212-Rev. A, 19-Feb-18
Document Number: 75573
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
1.2
SiSF00DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
T
J
= 150 °C
Vishay Siliconix
Axis Title
10000
2.0
1.8
2nd line
V
GS(th)
(V)
1000
T
J
= 25 °C
10000
2nd line
I
FS1S2
- Source Current (A)
10
1.6
1.4
1.2
1.0
I
D
= 250 μA
1000
1st line
2nd line
100
10
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
1
100
1st line
2nd line
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
FS1S2
- Source-to-Drain Voltage (V)
2nd line
10
0.8
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
0.014
0.012
2nd line
R
S1S2(on)
- On-Resistance (Ω)
0.010
0.008
0.006
0.004
T
J
= 25 °C
T
J
= 125 °C
I
D
= 10 A
Axis Title
10000
80
10000
60
1000
2nd line
Power (W)
1st line
2nd line
40
100
20
1000
1st line
2nd line
0.01
0.1
1
Time (s)
2nd line
10
100
10
1000
100
0.002
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
0
0.001
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
S1S2(ON)
Limited
Limited by R
S1S2(on)
(1)
I
S1S2M
Limited
10000
100
2nd line
I
S1S2
- Drain Current (A)
100 μs
1 ms
1000
1st line
2nd line
10
10
1
10 ms
100 ms
100
1s
10 s
DC
0.1
T
A
= 25 °C
Single pulse
BV
DS1S2
Limited
0.01
0.01
(1)
0.1
1
10
100
V
S1S2
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S18-0212-Rev. A, 19-Feb-18
Document Number: 75573
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSF00DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
120
100
2nd line
I
S1S2
- Drain Current (A)
80
60
Package limited
Vishay Siliconix
Axis Title
10000
100
10000
80
1000
2nd line
Power (W)
1st line
2nd line
60
1000
1st line
2nd line
100
20
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
40
40
20
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
100
10
0
Current Derating
a
Power, Junction-to-Case (Drain)
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
EDGE in softwareEnabling a fully-software EDGE data receiver implementation has many advantages. Design can be iterated without effecting the terminal''s hardware design while opti ......
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