• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• High power density DC/DC
• DC/AC inverters
• Battery and load switch
G
D
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
R
DS(on)
max. () at V
GS
= 4.5 V
Q
g
typ. (nC)
I
D
(A)
a
Configuration
40
0.00163
0.00230
32
131
Single
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8
SiRA52ADP-T1-RE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
40
+20, -16
131
105
41.6
b, c
33.3
b, c
200
43.6
4.3
b, c
35
61
48
30.7
4.8
b, c
3
b, c
-55 to +150
260
UNIT
V
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
A
mJ
Maximum power dissipation
W
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
b, f
Maximum junction-to-ambient
t
10 s
R
thJA
22
26
°C/W
1.7
2.6
Maximum junction-to-case (drain)
Steady state
R
thJC
Notes
a. T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnectio
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless component
f. Maximum under steady state conditions is 70 °C/W
S18-0480-Rev. A, 30-Apr-2018
Document Number: 76609
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA52ADP
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20, -16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 15 A
MIN.
40
-
-
1.1
-
-
-
30
-
-
-
-
-
-
-
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 20 V, R
L
= 2
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
-
-
-
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
22
-5.8
-
-
-
-
-
MAX.
-
-
-
2.4
± 100
1
10
-
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current (t = 100 μs)
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
-
-
0.71
50
56
30
20
43.6
200
1.1
100
112
-
-
A
V
ns
nC
ns
5500
1086
67
0.013
66
32
15
4.5
50
1.1
17
6
38
6
40
67
36
11
-
-
-
-
100
60
-
-
75
2.0
34
12
76
12
80
134
72
22
ns
nC
pF
0.00130 0.00163
0.00190 0.00230
98
-
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0480-Rev. A, 30-Apr-2018
Document Number: 76609
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiRA52ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
150
V
GS
= 10 V thru 4 V
Vishay Siliconix
Axis Title
10000
250
10000
120
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
90
2nd line
I
D
- Drain Current (A)
200
1000
1st line
2nd line
100
50
T
C
= 125 °C
V
GS
= 2 V
T
C
= -55 °C
150
T
C
= 25 °C
60
100
30
V
GS
= 3 V
100
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.003
10000
6000
C
iss
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.0024
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
V
GS
= 4.5 V
4800
1000
C
oss
0.0012
V
GS
= 10 V
2400
100
1200
C
rss
100
0.0006
0
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
0
0
8
16
24
32
40
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.7
I
D
= 15 A
10000
8
1000
1st line
2nd line
6
V
DS
= 10 V, 20 V, 30 V
1.5
V
GS
= 10 V
1000
1st line
2nd line
100
10
1.3
V
GS
= 4.5 V
4
1.1
100
2
0.9
0
0
14
28
42
56
70
Q
g
- Total Gate Charge (nC)
2nd line
10
0.7
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S18-0480-Rev. A, 30-Apr-2018
Document Number: 76609
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
0.0018
3600
SiRA52ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.0060
I
D
= 15 A
Vishay Siliconix
Axis Title
10000
10
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
1000
1st line
2nd line
1
T
J
= 25 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
0.0048
1000
1st line
2nd line
100
10
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10000
1000
100
40
10
0.01
0.1
Time (s)
2nd line
1
10
1st line
2nd line
0.0036
T
J
= 125 °C
T
J
= 25 °C
0.1
100
0.01
0.0024
0.0012
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0.0000
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
0.5
10000
200
Axis Title
0.2
2nd line
V
GS(th)
- Variance (V)
1000
2nd line
Power (W)
I
D
= 5 mA
160
-0.4
I
D
= 250 μA
1st line
2nd line
-0.1
120
80
100
-0.7
-1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
100 μs
1000
10 ms
1
Limited by R
DS(on) (1)
100 ms
1s
100
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
10 s
DC
0.01
0.01
(1)
10
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
S18-0480-Rev. A, 30-Apr-2018
Document Number: 76609
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
10
1 ms
SiRA52ADP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
150
10000
Vishay Siliconix
120
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
30
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
90
60
0
Current Derating
a
Axis Title
60
10000
2.5
Axis Title
10000
48
1000
2nd line
Power (W)
1st line
2nd line
36
2nd line
Power (W)
2.0
1000
1st line
2nd line
100
0.5
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.5
24
100
12
1.0
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S18-0480-Rev. A, 30-Apr-2018
Document Number: 76609
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
随着手机供货商将更先进的GPS功能整合在手机中，业界所关注焦点开始转向GPS功能的设计与其便利性能。截至目前为止，尽管大部份注意力都被导向GPS数字讯号处理器(DSP)方面，但这只是GPS成功的原因之一；而GPS接收器IC、RF/IF前端也正相继成为定位服务成功的关键因素。 据RNCOS Industry Research Solutions统计，全球GPS市场可望在今年达到300亿...[详细]
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