d. See solder profile (www.vishay.com/doc?73257). The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 85 °C/W
g. T
C
= 25 °C
S17-1507-Rev. A, 02-Oct-17
Document Number: 76759
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4459BDY
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= -10 A, di/dt = 100 A/μs, T
J
= 25 °C
I
S
= -5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= -15 V, R
L
= 1.5
,
I
D
-10 A,
V
GEN
= -4.5 V, R
g
= 1
V
DD
= -15 V, R
L
= 1.5
,
I
D
-10 A,
V
GEN
= -10 V, R
g
= 1
f = 1 MHz
V
DS
= -15 V, V
GS
= -10 V, I
D
= -10 A
V
DS
= -15 V, V
GS
= -4.5 V, I
D
=-10 A
V
DS
= -15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= -250 μA
I
D
= -10 mA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +16 / -20 V
V
DS
= -30 V, V
GS
= 0 V
V
DS
= -30 V, V
GS
= 0 V, T
J
= 70 °C
V
DS
-10 V, V
GS
= -10 V
V
GS
= -10 V, I
D
= -15 A
V
GS
= -4.5 V, I
D
= -10 A
V
DS
= -15 V, I
D
= -15 A
MIN.
-30
-
-
-1
-
-
-
-40
-
-
-
-
-
-
-
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-17
5.5
-
-
-
-
-
0.0041
0.0063
81
3490
1420
70
56
27
9.4
8.2
3.5
15
6
39
10
34
86
31
22
-
-
-0.73
44
41
19
25
MAX.
-
-
-
-2.2
100
-1
-15
-
0.0049
0.0082
-
-
-
-
84
41
-
-
6
30
12
78
20
68
172
62
44
-5
-150
-1.1
88
82
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1507-Rev. A, 02-Oct-17
Document Number: 76759
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si4459BDY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
150
V
GS
= 10 V thru 5 V
Vishay Siliconix
Axis Title
10000
150
10000
120
2nd line
I
D
- Drain Current (A)
V
GS
= 4 V
120
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
30
T
C
= 125 °C
T
C
= -55 °C
90
90
T
C
= 25 °C
60
100
30
V
GS
= 3 V
V
GS
= 2 V
60
0
0
1
2
3
10
5
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
4
V
DS
- Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
0.015
10000
4500
Axis Title
10000
C
iss
2nd line
R
DS(on)
- On-Resistance (Ω)
0.012
1000
1st line
2nd line
0.009
V
GS
= 4.5 V
3600
2nd line
C - Capacitance (pF)
1000
C
oss
0.006
100
0.003
V
GS
= 10 V
1800
100
900
C
rss
0
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
10
2nd line
V
GS
- Gate-to-Source Voltage (V)
I
D
= 10 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
I
D
= 15 A
10000
8
1000
1st line
2nd line
6
1.4
V
GS
= 10 V
1000
1st line
2nd line
100
0.8
10
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
1.2
V
GS
= 4.5 V
4
V
DS
= 10 V, 15 V, 20 V
1.0
100
2
0
0
12
24
36
48
60
Q
g
- Total Gate Charge (nC)
2nd line
10
0.6
Gate Charge
On-Resistance vs. Junction Temperature
S17-1507-Rev. A, 02-Oct-17
Document Number: 76759
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
2700
Si4459BDY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
1.0
I
D
= 250 μA
Vishay Siliconix
Axis Title
10000
10
2nd line
I
S
- Source Current (A)
1000
1st line
2nd line
1
T
J
= 25 °C
0.7
2nd line
V
GS(th)
- Variance (V)
T
J
= 150 °C
1000
1st line
2nd line
100
-0.2
10
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10000
1000
100
30
10
0.01
0.1
Time (s)
2nd line
1
10
1st line
2nd line
0.4
I
D
= 5 mA
0.1
100
0.01
0.1
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
-0.5
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
0.020
I
D
= 15 A
Axis Title
10000
150
2nd line
R
DS(on)
- On-Resistance (Ω)
0.016
1000
1st line
2nd line
0.012
T
J
= 125 °C
120
2nd line
Power (W)
90
0.008
100
0.004
T
J
= 25 °C
60
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
0
0.001
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
I
D
limited
100 μs
1000
1 ms
1
Limited by R
DS(on) (1)
10 ms
100 ms
100
1s
10 s
DC
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
0.01
0.01
(1)
10
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-1507-Rev. A, 02-Oct-17
Document Number: 76759
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
10
Si4459BDY
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
32.0
10000
Vishay Siliconix
25.6
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
100
6.4
10
0
30
60
90
120
150
T
C
- Case Temperature (°C)
2nd line
19.2
12.8
0
Current Derating
a
Axis Title
7.0
10000
2.0
Axis Title
10000
5.6
1000
2nd line
Power (W)
1st line
2nd line
4.2
2nd line
Power (W)
1.6
1000
1st line
2nd line
100
0.4
10
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
2nd line
1.2
2.8
100
1.4
0.8
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S17-1507-Rev. A, 02-Oct-17
Document Number: 76759
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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