d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8SH is a leadless package within the PowerPAK 1212-8 package
family. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at
the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 81 °C/W
g. Package limited
S18-0697-Rev.B, 09-Jul-2018
Document Number: 75897
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSH402DN
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 10 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 19 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 19 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 19 A
V
GS
= 4.5 V, I
D
= 16.6 A
V
DS
= 15 V, I
D
= 19 A
MIN.
30
-
-
1.15
-
-
-
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
24
-6
-
-
-
-
-
0.0048
0.0064
82
1700
350
140
28
12
5.4
4.6
1.2
25
20
25
15
12
10
25
10
-
-
0.8
25
17
13
12
MAX.
-
-
-
2.2
± 100
1
5
-
0.0060
0.0080
-
-
-
-
42
21
-
-
2.4
40
30
40
25
20
15
40
15
30
70
1.2
50
35
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0697-Rev.B, 09-Jul-2018
Document Number: 75897
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSH402DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
70
V
GS
= 10 V thru 4 V
60
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
50
40
30
20
10
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 3 V
10
T
C
= -55 °C
Vishay Siliconix
6
T
C
= 25 °C
4
2
T
C
= 125 °C
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.010
2100
1800
R
DS(on)
- On-Resistance (Ω)
0.008
V
GS
= 4.5 V
0.006
V
GS
= 10 V
0.004
C - Capacitance (pF)
1500
1200
900
600
300
C
rss
0.002
0
10
20
30
40
50
60
70
0
0
5
Transfer Characteristics
C
iss
C
oss
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
R
DS(on)
- On-Resistance (Normalized)
1.8
Capacitance
I
D
= 19 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
1.6
I
D
= 19 A
1.4
V
GS
= 10 V, 4.5 V
1.2
6
V
DS
= 24 V
4
1.0
2
0.8
0
0
6
12
18
24
30
0.6
-50
-25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S18-0697-Rev.B, 09-Jul-2018
Document Number: 75897
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSH402DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.015
I
D
= 19 A
R
DS(on)
- On-Resistance (Ω)
0.012
Vishay Siliconix
I
S
- Source Current (A)
10
T
J
= 150 °C
T
J
= 25 °C
0.009
T
J
= 125 °C
0.006
0.003
T
J
= 25 °C
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
2.4
2.2
40
50
On-Resistance vs. Gate-to-Source Voltage
2.0
V
GS(th)
(V)
1.8
1.6
1.4
Power (W)
I
D
= 250 µA
30
20
10
1.2
1.0
-50
-25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.01
0.1
1
Time (s)
10
100
600
Threshold Voltage
100
Limited by R
DS(on)
(1)
I
DM
limited
Single Pulse Power (Junction-to-Ambient)
100 µs
10
I
D
- Drain Current (A)
1 ms
I
D(on)
limited
1
100 ms
1s
10 s
T
A
= 25 °C
Single pulse
0.01
0.1
DC
BVDSS
limited
10 ms
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
(1)
V
GS
> minimum V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S18-0697-Rev.B, 09-Jul-2018
Document Number: 75897
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiSH402DN
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
80
60
Vishay Siliconix
50
60
I
D
- Drain Current (A)
40
Power (W)
75
100
125
150
40
Package Limited
30
20
20
10
0
0
25
50
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S18-0697-Rev.B, 09-Jul-2018
Document Number: 75897
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
