NSI50150ADT4G
Adjustable Constant Current
Regulator & LED Driver
50 V, 150 − 350 mA
+
10%, 4.2 W Package
The adjustable constant current regulator (CCR) is a simple,
economical and robust device designed to provide a cost effective
solution for regulating current in LEDs. The CCR is based on
Self-Biased Transistor (SBT) technology and regulates current over a
wide voltage range. It is designed with a negative temperature
coefficient to protect LEDs from thermal runaway at extreme voltages
and currents.
The CCR turns on immediately and is at 14% of regulation with
only 0.5 V Vak. The R
adj
pin allows I
reg(SS)
to be adjusted to higher
currents by attaching a resistor between R
adj
(Pin 3) and the Cathode
(Pin 4). The R
adj
pin can also be left open (No Connect) if no
adjustment is required. It requires no external components allowing it
to be designed as a high or low−side regulator. The high anode-
cathode voltage rating withstands surges common in Automotive,
Industrial and Commercial Signage applications. This device is
available in a thermally robust package and is qualified to stringent
AEC−Q101 standard, which is lead-free RoHS compliant and uses
halogen-free molding compound.
Features
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I
reg(SS)
= 150 − 350 mA
@ Vak = 7.5 V
Anode
1
3
R
adj
4
Cathode
4
1 2
3
DPAK
CASE 369C
•
•
•
•
•
•
•
•
•
•
Robust Power Package: 4.2 Watts
Adjustable up to 350 mA
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
UL94−V0 Certified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
Eliminates Additional Regulation
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
MARKING DIAGRAM
1
A
R
adj
Y
WW
NSI150
G
YWW
NSI
150G
C
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
NSI50150ADT4G
NSV50150ADT4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500/Tape & Reel
2500/Tape & Reel
•
Automobile: Chevron Side Mirror Markers, Cluster, Display &
Instrument Backlighting, CHMSL, Map Light
•
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
•
Application Notes AND8391/D, AND9008/D − Power Dissipation
Considerations
•
Application Note AND8349/D − Automotive CHMSL
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
March, 2015 − Rev. 1
Publication Order Number:
NSI50150AD/D
NSI50150ADT4G
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Anode−Cathode Voltage
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Human Body Model
Machine Model
Symbol
Vak Max
V
R
T
J
, T
stg
ESD
Value
50
500
−55 to +175
Class 3B (8000 V)
Class C (400 V)
Unit
V
mV
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Symbol
I
reg(SS)
V
overhead
I
reg(P)
140.5
Min
135
Typ
150
1.8
158
175.35
Max
165
Unit
mA
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. I
reg(SS)
steady state is the voltage (Vak) applied for a time duration
≥
170 sec, using FR−4 @ 1000 mm
2
2 oz. Copper traces, in still air.
2. V
overhead
= V
in
− V
LEDs
. V
overhead
is typical value for 48% I
reg(SS)
.
3. I
reg(P)
non−repetitive pulse test. Pulse width t
≤
1 msec.
Figure 1. CCR Voltage−Current Characteristic
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2
NSI50150ADT4G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 4) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 4)
Thermal Resistance, Junction−to−Tab (Note 4)
Total Device Dissipation (Note 5) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Resistance, Junction−to−Tab (Note 5)
Total Device Dissipation (Note 6) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Resistance, Junction−to−Tab (Note 6)
Total Device Dissipation (Note 7) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Resistance, Junction−to−Tab (Note 7)
Total Device Dissipation (Note 8) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Resistance, Junction−to−Tab (Note 8)
Total Device Dissipation (Note 9) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Resistance, Junction−to−Tab (Note 9)
Total Device Dissipation (Note 10) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Resistance, Junction−to−Tab (Note 10)
Total Device Dissipation (Note 11) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 11)
Thermal Resistance, Junction−to−Tab (Note 11)
Junction and Storage Temperature Range
Symbol
P
D
R
θJA
R
ψJ−TAB
P
D
R
θJA
R
ψJ−TAB
P
D
R
θJA
R
ψJ−TAB
P
D
R
θJA
R
ψJ−TAB
P
D
R
θJA
R
ψJ−TAB
P
D
R
θJA
R
ψJ−TAB
P
D
R
θJA
R
ψJ−TAB
P
D
R
θJA
R
ψJ−TAB
T
J
, T
stg
Max
2125
14.16
70.6
6.8
2500
16.67
60
6.3
2496
16.64
60.1
6.5
2930
19.53
51.2
5.9
2771
18.47
54.1
6.2
3256
21.71
46.1
5.7
4202
28.01
35.7
5.4
4144
27.62
36.2
1.0
−55 to +150
Unit
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
°C
4. FR−4 @ 300 mm
2
, 1 oz. copper traces, still air.
5. FR−4 @ 300 mm
2
, 2 oz. copper traces, still air.
6. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
7. FR−4 @ 500 mm
2
, 2 oz. copper traces, still air.
8. FR−4 @ 700 mm
2
, 1 oz. copper traces, still air.
9. FR−4 @ 700 mm
2
, 2 oz. copper traces, still air.
10. FR−4 @ 1000 mm
2
, 3 oz. copper traces, still air.
11. 400 mm
2
, DENKA K1, 1.5 mm AL, 2 kV thermally conductive dielectric, 2 oz. Cu, or equivalent.
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3
NSI50150ADT4G
TYPICAL PERFORMANCE CURVES
(Minimum FR−4 @ 1000 mm
2
, 3 oz. Copper Trace, Still Air)
I
reg(SS)
, STEADY STATE CURRENT (mA)
180
T
A
= 25°C
T
A
= 85°C
≈−0.118
mA/°C typ
≈−0.153
mA/°C typ
≈−0.174
mA/°C typ
T
A
= 125°C
T
J
, maximum die temperature limit 175°C
I
reg(P)
, PULSE CURRENT (mA)
160
140
120
100
80
60
40
20
0
0
1
2
3
DC Test Steady State, Still Air, R
adj
= Open
4
5
6
7
8
9 10 11 12 13 14 15
T
A
= −40°C
180
160
140
120
100
80
60
Non−Repetitive Pulse Test
40
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
Vak, ANODE−CATHODE VOLTAGE (V)
T
A
= 25°C
R
adj
= Open
Vak, ANODE−CATHODE VOLTAGE (V)
Figure 2. Steady State Current (I
reg(SS)
) vs.
Anode−Cathode Voltage (Vak)
I
reg(SS)
, STEADY STATE CURRENT (mA)
170
I
reg
, CURRENT REGULATION (mA)
Vak @ 7.5 V
165 T
A
= 25°C
R
adj
= Open
160
155
150
145
140
135
130
140
145
150
155
160
165
170
175
180
156
155
154
153
152
151
150
149
148
0
20
Figure 3. Pulse Current (I
reg(P)
) vs.
Anode−Cathode Voltage (Vak)
Vak @ 7.5 V
T
A
= 25°C
R
adj
= Open
40
60
80
100 120 140 160 180 200
I
reg(P)
, PULSE CURRENT (mA)
TIME (s)
Figure 4. Steady State Current vs. Pulse
Current Testing
I
reg(SS)
, STEADY STATE CURRENT (mA)
350
Figure 5. Current Regulation vs. Time
Vak @ 7.5 V
T
A
= 25°C
300
250
200
150
1
10
100
1000
R
adj
(W), Max Power 1 W
Figure 6. I
reg(SS)
vs. R
adj
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4
NSI50150ADT4G
6000
5700
5400
P
D
, POWER DISSIPATION (mW)
5100
4800
4500
4200
3900
3600
3300
3000
2700
2400
2100
1800
1500
1200
−40
300 mm
2
1 oz Cu
700 mm
2
1 oz Cu
500 mm
2
2 oz Cu
500 mm
2
1 oz Cu
300 mm
2
2 oz Cu
700 mm
2
2 oz
1000 mm
2
3 oz Cu
400 mm
2
MCPCB
−20
0
20
40
60
80
T
A
, AMBIENT TEMPERATURE (°C)
Figure 7. DPAK Thermal Power Dissipation vs.
Ambient Temperature @ T
J
= 1755C
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