• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
S
7
2.0
Top View
1
m
5m
2
3
D
G
Bottom View
1
D
Marking code:
A1
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
R
DS(on)
max. () at V
GS
= 4.5 V
Q
g
typ. (nC)
I
D
(A)
Configuration
40
0.0125
0.0160
7.7
30
a
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SC-70
SiAA40DJ-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
Single-pulse avalanche current
Single-pulse avalanche energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
40
+20 / -16
30
24
12.8
b, c
10.2
b, c
60
16
2.9
b, c
10
5
19.2
12.3
3.5
b, c
2.2
b, c
-55 to +150
260
UNIT
V
T
C
= 25 °C
T
C
= 70 °C
Maximum power dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
d, e
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
b, f
Maximum junction-to-ambient
t
5s
R
thJA
28
36
°C/W
5.3
6.5
Maximum junction-to-case (drain)
Steady state
R
thJC
Notes
a. T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board
c. t = 5 s
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 80 °C/W
S18-0352-Rev. C, 26-Mar-18
Document Number: 75671
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
05
2.
m
m
APPLICATIONS
• DC/DC converters
• Synchronous rectification
• Motor drive control
• Battery management and
protection
• Load switch
G
D
S
N-Channel MOSFET
A
mJ
W
°C
SiAA40DJ
www.vishay.com
Vishay Siliconix
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
V
DS
= 20 V, V
GS
= 10 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
V
DD
= 20 V, R
L
= 4
I
D
5 A, V
GEN
= 4.5 V, R
g
= 1
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +20 V / -16 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
V
GS
= 4.5 V, I
D
= 5 A
V
DS
= 10 V, I
D
= 5 A
MIN.
40
-
-
1
-
-
-
20
-
-
-
-
-
-
-
Q
g
Q
gs
Q
gd
Q
oss
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 5 A, dI/dt = 100 A/μs, T
J
= 25 °C
I
S
= 5 A, V
GS
= 0 V
T
C
= 25 °C
V
DD
= 20 V, R
L
= 4
I
D
5 A, V
GEN
= 10 V, R
g
= 1
-
-
-
-
-
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
23
-5
-
-
-
-
-
0.0096
0.0125
50
1200
165
21
0.017
16
7.7
3.2
1.8
8
1.9
13
45
11
22
6
21
13
8
-
-
0.8
25
10
13
12
MAX.
-
-
-
2.4
± 100
1
10
-
0.0125
0.0160
-
-
-
-
0.034
24
12
-
-
-
3.8
30
90
20
45
12
40
30
15
16
60
1.2
50
20
-
-
ns
nC
pF
UNIT
V
mV/°C
V
nA
μA
A
S
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
V
DS
temperature coefficient
V
GS(th)
temperature coefficient
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current (t = 100 μs)
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0352-Rev. C, 26-Mar-18
Document Number: 75671
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiAA40DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
60
50
2nd line
I
D
- Drain Current (A)
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 3 V
V
GS
= 10 V thru 5 V
V
GS
= 4 V
Vishay Siliconix
Axis Title
10000
60
50
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
40
30
20
T
C
= 125 °C
T
C
= 25 °C
10000
1000
1st line
2nd line
100
T
C
= -55 °C
100
10
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Axis Title
0.020
10000
1500
Transfer Characteristics
Axis Title
10000
C
iss
2nd line
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
1000
1st line
2nd line
2nd line
C - Capacitance (pF)
0.015
1200
1000
1st line
2nd line
C
oss
900
0.010
V
GS
= 10 V
600
100
100
0.005
300
C
rss
0
0
10
20
30
40
50
60
I
D
- Drain Current (A)
2nd line
10
0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current
Axis Title
10
I
D
= 10 A
Capacitance
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.8
I
D
= 5 A
10000
V
GS
= 10 V
2nd line
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 20 V
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
1000
1st line
2nd line
1000
V
GS
= 4.5 V
4
V
DS
= 10 V
V
DS
= 32 V
100
100
2
0
0
4
8
12
16
20
Q
g
- Total Gate Charge (nC)
2nd line
10
10
100 125 150
T
J
- Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S18-0352-Rev. C, 26-Mar-18
Document Number: 75671
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
6
SiAA40DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.04
I
D
= 5 A
Vishay Siliconix
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
I
S
- Source Current (A)
10
T
J
= 150 °C
T
J
= 25 °C
0.03
1000
0.02
T
J
= 125 °C
1000
1st line
2nd line
1
100
100
0.01
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
0
2
4
6
8
10
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
Source-Drain Diode Forward Voltage
Axis Title
2.2
2.0
1.8
2nd line
V
GS(th)
(V)
1.6
1.4
1.2
1.0
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
100
1000
2nd line
Power (W)
1st line
2nd line
10000
On-Resistance vs. Gate-to-Source Voltage
Axis Title
30
25
20
15
10
5
0
0.001
10
1000
100
1000
1st line
2nd line
0.01
0.1
1
10
100
10000
I
D
= 250 μA
Time (s)
2nd line
Threshold Voltage
Axis Title
I
DM
limited
Single Pulse Power, Junction-to-Ambient
100
Limited by R
DS(on) (1)
10000
2nd line
I
D
- Drain Current (A)
10
100 μs
1000
1
I
D
limited
1 ms
10 ms
0.1
T
A
= 25 °C
Single pulse
BVDSS limited
100 ms
100
1s
10 s
DC
0.01
0.1
(1)
10
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S18-0352-Rev. C, 26-Mar-18
Document Number: 75671
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
1st line
2nd line
SiAA40DJ
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
35
30
2nd line
Power Dissipation (W)
2nd line
I
D
- Drain Current (A)
25
20
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
2nd line
10
100
15
1000
10
100
5
1st line
2nd line
1000
1st line
2nd line
10000
20
Axis Title
10000
Vishay Siliconix
Current Derating
a
Power Derating
Note
a. The power dissipation P
D
is based on T
J
max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S18-0352-Rev. C, 26-Mar-18
Document Number: 75671
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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