Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | International Rectifier ( Infineon ) |
包装说明 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 3 |
Reach Compliance Code | compliant |
Is Samacsys | N |
其他特性 | SHORT CIRCUIT RATED |
外壳连接 | COLLECTOR |
最大集电极电流 (IC) | 23 A |
集电极-发射极最大电压 | 600 V |
配置 | SINGLE WITH BUILT-IN DIODE |
门极发射器阈值电压最大值 | 5.5 V |
门极-发射极最大电压 | 20 V |
JESD-30 代码 | R-PSSO-G2 |
元件数量 | 1 |
端子数量 | 2 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | N-CHANNEL |
功耗环境最大值 | 100 W |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | 40 |
晶体管应用 | MOTOR CONTROL |
晶体管元件材料 | SILICON |
标称断开时间 (toff) | 190 ns |
标称接通时间 (ton) | 64 ns |
VCEsat-Max | 3.8 V |
Base Number Matches | 1 |
IRGBC30KD2-STRRPBF | IRGBC30KD2-STRLPBF | IRGBC30KD2-STRR | IRGBC30KD2-STRL | |
---|---|---|---|---|
描述 | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, SMD-220, 3 PIN |
是否无铅 | 不含铅 | 不含铅 | 含铅 | 含铅 |
是否Rohs认证 | 符合 | 符合 | 不符合 | 不符合 |
厂商名称 | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 3 | 3 | 3 | 3 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
Is Samacsys | N | N | N | N |
其他特性 | SHORT CIRCUIT RATED | SHORT CIRCUIT RATED | SHORT CIRCUIT RATED | SHORT CIRCUIT RATED |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 23 A | 23 A | 23 A | 23 A |
集电极-发射极最大电压 | 600 V | 600 V | 600 V | 600 V |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
门极发射器阈值电压最大值 | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
门极-发射极最大电压 | 20 V | 20 V | 20 V | 20 V |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 | 2 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
功耗环境最大值 | 100 W | 100 W | 100 W | 100 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
处于峰值回流温度下的最长时间 | 40 | 40 | NOT SPECIFIED | NOT SPECIFIED |
晶体管应用 | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL | MOTOR CONTROL |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
标称断开时间 (toff) | 190 ns | 190 ns | 190 ns | 190 ns |
标称接通时间 (ton) | 64 ns | 64 ns | 64 ns | 64 ns |
VCEsat-Max | 3.8 V | 3.8 V | 3.8 V | 3.8 V |
Base Number Matches | 1 | 1 | 1 | 1 |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved