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MX25L8006EM1J-12G: 产品描述IC FLASH 8MBIT; 产品类别存储存储; 文件大小1MB，共57页; 制造商Macronix; 官网地址http://www.macronix.com/en-us/Pages/default.aspx; 标准

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MX25L8006EM1J-12G概述

IC FLASH 8MBIT

MX25L8006EM1J-12G规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Macronix
包装说明	SOP, SOP8,.25
Reach Compliance Code	unknown
Factory Lead Time	16 weeks
备用内存宽度	1
最大时钟频率 (fCLK)	86 MHz
数据保留时间-最小值	20
JESD-30 代码	R-PDSO-G8
长度	4.9 mm
内存密度	8388608 bit
内存集成电路类型	FLASH
内存宽度	8
功能数量	1
端子数量	8
字数	1048576 words
字数代码	1000000
工作模式	SYNCHRONOUS
最高工作温度	105 °C
最低工作温度	-40 °C
组织	1MX8
封装主体材料	PLASTIC/EPOXY
封装代码	SOP
封装等效代码	SOP8,.25
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	SERIAL
编程电压	3 V
座面最大高度	1.75 mm
串行总线类型	SPI
最大待机电流	0.000025 A
最大压摆率	0.02 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
宽度	3.9 mm
写保护	HARDWARE

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MX25L8006E

3V, 8M-BIT [x 1/x 2]

CMOS SERIAL FLASH MEMORY

Key Features

• Hold Feature

• Low Power Consumption

• Auto Erase and Auto Program Algorithms

• Additional 512 bit secured OTP for unique identifier

P/N: PM1613

Rev. 1.6, August 28, 2017

MX25L8006E

Contents

FEATURES .................................................................................................................................................................. 5

GENERAL DESCRIPTION ......................................................................................................................................... 6

PIN CONFIGURATIONS ............................................................................................................................................. 7

PIN DESCRIPTION ...................................................................................................................................................... 7

BLOCK DIAGRAM....................................................................................................................................................... 8

MEMORY ORGANIZATION ......................................................................................................................................... 9

Table 1. Memory Organization ............................................................................................................................. 9

DEVICE OPERATION ................................................................................................................................................ 10

Figure 1. Serial Modes Supported...................................................................................................................... 10

DATA PROTECTION.................................................................................................................................................. 11

Table 2. Protected Area Sizes ............................................................................................................................ 12

Table 3. 512 bit Secured OTP Definition

............................................................................................................ 13

HOLD FEATURE........................................................................................................................................................ 14

Figure 2. Hold Condition Operation ................................................................................................................... 14

COMMAND DESCRIPTION ....................................................................................................................................... 15

Table 4. COMMAND DEFINITION ..................................................................................................................... 15

(1) Write Enable (WREN) ................................................................................................................................... 16

(2) Write Disable (WRDI) .................................................................................................................................... 16

(3) Read Status Register (RDSR) ...................................................................................................................... 16

Table 5. Status Register .................................................................................................................................... 17

(4) Write Status Register (WRSR) ...................................................................................................................... 17

Table 6. Protection Modes .................................................................................................................................. 18

(5) Read Data Bytes (READ) ............................................................................................................................. 19

(6) Read Data Bytes at Higher Speed (FAST_READ) ....................................................................................... 19

(7) Dual Output Mode (DREAD) ......................................................................................................................... 19

(8) Sector Erase (SE) ......................................................................................................................................... 19

(9) Block Erase (BE)........................................................................................................................................... 20

(10) Chip Erase (CE) .......................................................................................................................................... 20

(11) Page Program (PP) ..................................................................................................................................... 20

(12) Deep Power-down (DP) .............................................................................................................................. 21

(13) Release from Deep Power-down (RDP), Read Electronic Signature (RES) ............................................. 21

(14) Read Identification (RDID)

.......................................................................................................................... 22

(15) Read Electronic Manufacturer ID & Device ID (REMS) .............................................................................. 22

Table 7. ID DEFINITIONS ................................................................................................................................. 22

(16) Enter Secured OTP (ENSO) ....................................................................................................................... 22

(17) Exit Secured OTP (EXSO) .......................................................................................................................... 22

(18) Read Security Register (RDSCUR) ............................................................................................................ 23

Table 8. SECURITY REGISTER DEFINITION ................................................................................................... 23

(19) Write Security Register (WRSCUR) ............................................................................................................ 23

P/N: PM1613

Rev. 1.6, August 28, 2017

MX25L8006E

(20) Read SFDP Mode (RDSFDP)..................................................................................................................... 24

Figure 3. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence..................................................... 24

Table 9. Signature and Parameter Identification Data Values

........................................................................... 25

Table 10. Parameter Table (0): JEDEC Flash Parameter Tables ....................................................................... 26

Table 11. Parameter Table (1): Macronix Flash Parameter Tables ..................................................................... 28

POWER-ON STATE ................................................................................................................................................... 30

ELECTRICAL SPECIFICATIONS .............................................................................................................................. 31

ABSOLUTE MAXIMUM RATINGS ..................................................................................................................... 31

Figure 4. Maximum Negative Overshoot Waveform ......................................................................................... 31

CAPACITANCE TA = 25°C, f = 1.0 MHz............................................................................................................. 31

Figure 5. Maximum Positive Overshoot Waveform ............................................................................................ 31

Figure 6. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL

............................................................. 32

Figure 7. OUTPUT LOADING ........................................................................................................................... 32

Figure 8. SCLK TIMING DEFINITION ................................................................................................................ 32

Table 12. DC CHARACTERISTICS.................................................................................................................... 33

Table 13. AC CHARACTERISTICS .................................................................................................................... 34

Timing Analysis ........................................................................................................................................................ 35

Figure 9. Serial Input Timing .............................................................................................................................. 35

Figure 10. Output Timing .................................................................................................................................... 35

Figure 11. Hold Timing ....................................................................................................................................... 36

Figure 12. WP# Disable Setup and Hold Timing during WRSR when SRWD=1 ............................................... 36

Figure 13. Write Enable (WREN) Sequence (Command 06) ............................................................................. 37

Figure 14. Write Disable (WRDI) Sequence (Command 04).............................................................................. 37

Figure 15. Read Status Register (RDSR) Sequence (Command 05) ................................................................ 38

Figure 16. Write Status Register (WRSR) Sequence (Command 01)............................................................... 38

Figure 17. Read Data Bytes (READ) Sequence (Command 03) ...................................................................... 38

Figure 18. Read at Higher Speed (FAST_READ) Sequence (Command 0B)................................................... 39

Figure 19. Dual Output Read Mode Sequence (Command 3B) ......................................................................... 40

Figure 20. Sector Erase (SE) Sequence (Command 20) .................................................................................. 40

Figure 21. Block Erase (BE) Sequence (Command 52 or D8) .......................................................................... 40

Figure 22. Chip Erase (CE) Sequence (Command 60 or C7) ........................................................................... 41

Figure 23. Page Program (PP) Sequence (Command 02)................................................................................ 41

Figure 24. Deep Power-down (DP) Sequence (Command B9) ........................................................................ 42

Figure 25. Release from Deep Power-down (RDP) Sequence (Command AB) .............................................. 42

Figure 26. Read Electronic Signature (RES) Sequence (Command AB) ......................................................... 42

Figure 27. Read Identification (RDID) Sequence (Command 9F)

...................................................................... 43

Figure 28. Read Electronic Manufacturer & Device ID (REMS) Sequence (Command 90).............................. 43

Figure 29. Read Security Register (RDSCUR) Sequence (Command 2B) ........................................................ 44

Figure 30. Write Security Register (WRSCUR) Sequence (Command 2F) ....................................................... 44

Figure 31. Power-up Timing ............................................................................................................................... 45

Table 14. Power-Up Timing ............................................................................................................................... 45

P/N: PM1613

Rev. 1.6, August 28, 2017

MX25L8006EM1J-12G相似产品对比

	MX25L8006EM1J-12G	MX25L8006EPI-12G	MX25L8006EM2I-12G	MX25L8006EZUI-12G	MX25L8006EZNI-12G	MX25L8006EM1I-12GTR
描述	IC FLASH 8MBIT	IC FLASH 8MBIT	IC FLASH 8M SPI 86MHZ 8SOP	IC FLASH 8M SPI 86MHZ 8USON	IC FLASH 8M SPI 86MHZ 8WSON	Flash,
是否Rohs认证	符合	符合	符合	符合	符合	符合
包装说明	SOP, SOP8,.25	DIP-8	SOP, SOP8,.3	VSON, SOLCC8,.15,32	VSON, SOLCC8,.25	SOP-8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
备用内存宽度	1	1	1	1	1	1
最大时钟频率 (fCLK)	86 MHz	86 MHz	86 MHz	86 MHz	86 MHz	86 MHz
JESD-30 代码	R-PDSO-G8	R-PDIP-T8	R-PDSO-G8	S-PDSO-N8	R-PDSO-N8	R-PDSO-G8
长度	4.9 mm	9.27 mm	5.28 mm	4 mm	6 mm	4.9 mm
内存密度	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit	8388608 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	8	2	2	2	2	2
功能数量	1	1	1	1	1	1
端子数量	8	8	8	8	8	8
字数	1048576 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
字数代码	1000000	4000000	4000000	4000000	4000000	4000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	105 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	1MX8	4MX2	4MX2	4MX2	4MX2	4MX2
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	DIP	SOP	VSON	VSON	SOP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE
并行/串行	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL	SERIAL
编程电压	3 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
座面最大高度	1.75 mm	5.33 mm	2.16 mm	0.6 mm	0.8 mm	1.75 mm
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	NO	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	THROUGH-HOLE	GULL WING	NO LEAD	NO LEAD	GULL WING
端子节距	1.27 mm	2.54 mm	1.27 mm	0.8 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	3.9 mm	7.62 mm	5.23 mm	4 mm	5 mm	3.9 mm
Factory Lead Time	16 weeks	-	16 weeks	16 weeks	16 weeks	-
数据保留时间-最小值	20	20	20	20	20	-
封装等效代码	SOP8,.25	DIP8,.3	SOP8,.3	SOLCC8,.15,32	SOLCC8,.25	-
串行总线类型	SPI	SPI	SPI	SPI	SPI	-
最大待机电流	0.000025 A	0.00001 A	0.00001 A	0.00001 A	0.00001 A	-
最大压摆率	0.02 mA	0.02 mA	0.02 mA	0.02 mA	0.02 mA	-
写保护	HARDWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	HARDWARE/SOFTWARE	-
零件包装代码	-	DIP	SOIC	SON	QFN	-
针数	-	8	8	8	8	-
ECCN代码	-	EAR99	EAR99	EAR99	EAR99	-
耐久性	-	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	100000 Write/Erase Cycles	-
峰值回流温度（摄氏度）	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
电源	-	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V	-
认证状态	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
处于峰值回流温度下的最长时间	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
类型	-	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	-
Base Number Matches	-	1	1	1	1	1

MX25L8006EM1J-12G

MX25L8006EM1J-12G概述

MX25L8006EM1J-12G规格参数

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