BF 569W
PNP Silicon RF Transistor
kein Status
• For oscillators, mixer and self-oscillating
mixer stages in UHF TV-tuner
Type
BF 569W
Marking Ordering Code
LHs
Q62702-F1582
Pin Configuration
1=B
2=E
3=C
Package
SOT-323
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
35
40
3
30
5
mW
280
150
- 65 ... + 150
°C
mA
Unit
V
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
T
S
≤
93 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
≤
205
K/W
Semiconductor Group
1
Nov-28-1996
BF 569W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
Values
typ.
max.
Unit
V
(BR)CEO
35
-
-
50
-
V
nA
-
100
-
20
-
I
C
= 1 mA,
I
B
= 0
Collector-base cutoff current
I
CBO
h
FE
V
CB
= 20 ,
I
E
= 0
DC current gain
I
C
= 3 mA,
V
CE
= 10 V
AC Characteristics
Transition frequency
f
T
-
950
0.32
0.15
-
MHz
pF
-
-
-
dB
-
4.5
-
I
C
= 30 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
C
cb
C
ce
-
V
CB
= 10 V,
V
BE
=
v
be
= 0 ,
f
= 1 MHz
Collector-emitter capacitance
V
CE
= 10 V,
V
BE
=
v
be
= 0 ,
f
= 1 MHz
Noise figure
F
I
C
= 3 mA,
V
CE
= 10 V,
f
= 800 MHz
Z
S
= 60
Ω
Cannon-base power gain
G
p
-
14.8
-
I
C
= 3 mA,
V
CB
= 10 V,
f
= 800 MHz
R
L
= 500
Ω
Semiconductor Group
2
Nov-28-1996
BF 569W
Total power dissipation
P
tot
=
f
(T
A
*,
T
S
)
* Package mounted on epoxy
300
mW
P
tot
200
T
S
150
T
A
100
50
0
0
20
40
60
80
100
120 °C 150
T
A
,T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
2
K/W
R
thJS
10
2
P
totmax
/P
totDC
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
10
0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
t
p
-1
0
10
0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10
\undefined &SYMBOL.TP
-1
0
Semiconductor Group
3
Nov-28-1996
BF 569W
Transition frequency
f
T
=
f
(I
C
)
f
= 100MHz
V
CE
= 10V
Collector-base capacitance
C
cb
=
f
(V
CB
)
V
BE
=
v
be
= 0,
f
= 1MHz
Semiconductor Group
4
Nov-28-1996
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