BF569 / BF569R
Vishay Semiconductors
Silicon PNP Planar RF Transistor
Features
•
•
•
•
High gain
Low noise
e3
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
BF569
1
2
1
3
BF569R
Applications
For selfoscillating RF mixer stages.
Electrostatic sensitive device.
Observe precautions for handling.
3
2
19207
Mechanical Data
Typ:
BF569
Case:
SOT-23 Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Typ:
BF569R
Case:
SOT-23 Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
60 °C
Test condition
Symbol
- V
CBO
- V
CEO
- V
EBO
- I
C
P
tot
T
j
T
stg
Value
40
35
3
30
200
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Maximum Thermal Resistance
Parameter
Junction ambient
1)
1)
Test condition
Symbol
R
thJA
Value
450
Unit
K/W
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
µm
Cu
Electrical DC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Test condition
- V
CE
= 40 V, V
BE
= 0
- V
CB
= 20 V, I
E
= 0
- V
EB
= 2 V, I
C
= 0
- I
C
= 1 mA, I
B
= 0
Symbol
- I
CES
- I
CBO
- I
EBO
- V
(BR)CEO
h
FE
35
25
50
90
Min
Typ.
Max
100
100
10
Unit
µA
nA
µA
V
DC forward current transfer ratio - V
CE
= 10 V, - I
C
= 3 mA
Document Number 85000
Rev. 1.4, 15-Apr-05
www.vishay.com
1
BF569 / BF569R
Vishay Semiconductors
Electrical AC Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Noise figure
Test condition
- V
CE
= 10 V, - I
C
= 3 mA,
f = 300 MHz
- V
CB
= 10 V, f = 1 MHz
- V
CE
= 10 V, - I
C
= 3 mA,
Z
S
= 50
Ω,
Z
L
= 500
Ω,
f = 800 MHz
- V
CE
= 10 V, - I
C
= 3 mA,
Z
S
= 50
Ω,
Z
L
= 500
Ω,
f = 800 MHz
Symbol
f
T
C
cb
F
Min
Typ.
1000
0.35
4.2
5.0
Max
Unit
MHz
pF
dB
Power gain
G
pb
13
14.5
dB
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
300
250
200
150
100
50
0
0
96 12159
C
cb
– Collector Base Capacitance ( pF )
P
tot
-Total
Power Dissipation ( mW )
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16
20
–V
CB
– Collector Base Voltage ( V )
20
40
60
80
100 120 140 160
T
amb
- Ambient Temperature (
°C
)
12875
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
f
T
– Transition Frequency ( MHz )
1200
1000
800
600
400
200
0
0
–V
CB
= 10 V
f = 300 MHz
12847
3
6
9
12
–I
C
– Collector Current ( mA )
15
Figure 2. Transition Frequency vs. Collector Current
www.vishay.com
2
Document Number 85000
Rev. 1.4, 15-Apr-05
BF569 / BF569R
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
4
Document Number 85000
Rev. 1.4, 15-Apr-05
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