电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

SIT1602BI-33-25E-7.372800Y

产品描述-40 TO 85C, 5032, 50PPM, 2.5V, 7
产品类别无源元件   
文件大小975KB,共17页
制造商SiTime
标准
下载文档 全文预览

SIT1602BI-33-25E-7.372800Y概述

-40 TO 85C, 5032, 50PPM, 2.5V, 7

文档预览

下载PDF文档
SiT1602B
Low Power, Standard Frequency Oscillator
Features
Applications
52 standard frequencies between 3.57 MHz and 77.76 MHz
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/or
-55°C options, refer to
SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
Field Programmable
Oscillators
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
52 standard frequencies between
MHz
3.57 MHz and 77.76 MHz
-20
-25
-50
-20
-40
1.62
2.25
2.52
2.7
2.97
2.25
45
90%
Frequency Stability
F_stab
Frequency Stability and Aging
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
+25
ppm
supply voltage and load.
+50
ppm
Operating Temperature Range
+70
°C
Extended Commercial
+85
°C
Industrial
Supply Voltage and Current Consumption
1.8
1.98
V
Contact
SiTime
for 1.5V support
2.5
2.75
V
2.8
3.08
V
3.0
3.3
V
3.3
3.63
V
3.63
V
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
4.0
mA
Vdd = 1.8 V. OE = GND, Output in high-Z state
2.6
4.3
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
̅ ̅̅
A
1.4
2.5
ST = GND, Vdd = 2.5V, Output is weakly pulled down
̅ ̅̅
A
0.6
1.3
ST = GND, Vdd = 1.8V, Output is weakly pulled down
̅ ̅̅
A
LVCMOS Output Characteristics
1
1.3
55
2
2.5
2
%
ns
ns
ns
Vdd
All Vdds. See Duty Cycle definition in
Figure 3
and
Footnote 6
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Operating Temperature Range
T_use
Supply Voltage
Vdd
Current Consumption
Idd
OE Disable Current
Standby Current
I_OD
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
Output High Voltage
VOH
Output Low Voltage
VOL
10%
Vdd
Rev 1.04
January 30, 2018
www.sitime.com
EEWORLD大学堂----为什么iPhone的内存比安卓手机小很多,去运行无比流畅?
为什么iPhone的内存比安卓手机小很多,去运行无比流畅?:https://training.eeworld.com.cn/course/5554...
muyankop DIY/开源硬件专区
lattice_modisim 仿真
实用的modisim仿真...
993874007 FPGA/CPLD
怎样设计计算机内存储器
怎样设计计算机内存储器 ...
qiusheng 嵌入式系统
关于单片机和GPRS模块的连接
想做个单片机控制GPRS模块的系统,由单片机输出信息至GPRS,发送到客户端.... 对GPRS是一点都未涉及过,网上找了好久,尽不知如何入手!!一看就是什么AT指令之类的, 请各位大虾指条明 ......
herosw 嵌入式系统
【 ST NUCLEO-H743ZI测评】(4)移植Modbus测试(RTU)
本次活动测评开发板ST NUCLEO-H743ZI由ST意法半导体提供,感谢意法半导体对EEWorld测评的支持! STM32H7 NUCLEO_H743ZI 【 ST NUCLEO-H743ZI测评】(1)初识ST NUCLEO-H743ZI 【 ST NUC ......
dsjsjf stm32/stm8
【EEWORLD TI教室】 关于考试
这个认证考试主要是考的430的一些功能特点之类,如果作为认证考试之类应该加一些实验,这样可以避免有些人投机取巧,单纯的追求观看时间而没有认真学习,加上一些实验可以让同学们学的更认真些 ......
sfeifei 微控制器 MCU

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2276  1737  1539  875  2562  48  21  41  32  4 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved