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MUR4L60HR0G

产品描述DIODE GEN PURP 600V 4A DO201AD
产品类别分立半导体    二极管   
文件大小247KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
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MUR4L60HR0G概述

DIODE GEN PURP 600V 4A DO201AD

MUR4L60HR0G规格参数

参数名称属性值
是否Rohs认证符合
包装说明O-PALF-W2
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性FREE WHEELING DIODE
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.28 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流125 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流4 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
参考标准AEC-Q101
最大重复峰值反向电压600 V
最大反向电流10 µA
最大反向恢复时间0.05 µs
表面贴装NO
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
Base Number Matches1

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MUR4L20 - MUR4L60
Taiwan Semiconductor
CREAT BY ART
4A, 200V - 600V Ultrafast Glass Passivated Rectifiers
FEATURES
- Ideally suited for use in very high frequency
switching power supplies, inverters and as free
wheeling diodes
- Ultrafast recovery time for high efficiency
- Excellent high temperature switching
- Glass passivated junction
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Packing code with suffix "H" means AEC-Q101 qualified
Terminal:Matte
tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test,
Weight:
1.2 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@4A
Maximum reverse current @ rated VR T
J
=25 °C
T
J
=125 °C
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
R
θJL
T
J
T
STG
0.89
5
150
25
65
42
15
- 55 to +175
- 55 to +175
MUR4L20
200
140
200
MUR4L40
400
280
400
4
125
1.28
10
250
50
MUR4L60
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C/W
°C
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version: A1605

 
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