AH116 / ECP052G
Product Features
•
800 – 1000 MHz
•
+28 dBm P1dB
•
+43 dBm Output IP3
•
17.5 dB Gain @ 900 MHz
•
Single Positive Supply (+5 V)
•
MTTF >100 Years
1/2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Description
The AH116 / ECP052 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve high performance for
various narrow-band tuned application circuits with up to
+43 dBm OIP3 and +28 dBm of compressed 1-dB power
and is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
Functional Diagram
1
8
7
6
5
2
3
4
The product is targeted for use as driver amplifiers for
•
Lead-free/green/RoHS-compliant
wireless infrastructure where high linearity and medium
power is required. The internal active bias allows the
SOIC-8 SMT Pkg.
AH116 / ECP052 to maintain high linearity over
temperature and operate directly off a +5 V supply. This
Applications
combination makes the device an excellent fit for
transceiver line cards and power amplifiers in current and
•
Mobile Infrastructure
next generation multi-carrier 3G base stations.
•
Final Stage Amplifier for
Repeaters
Function
Vref
Input / Base
Output / Collector
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside
2, 4, 5
Specifications
Parameters
Frequency Range
Gain
Input R.L.
Output R.L.
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR, 900 MHz
Typical Performance
(1)
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
mA
V
200
Min
15
Typ
900
17.5
18
7
+28.7
+43
+23
7
250
+5
Max
Parameters
Frequency
Gain
S11
S22
Output P1dB
Output IP3
(2)
IS-95A Channel Power
@ -45 dBc ACPR,
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dB
Typical
900
17.5
-18
-7
+28.7
+43
+23
7
+5 V @ 250 mA
+27
+42
Noise Figure
Operating Current Range
(3)
Device Voltage
300
Noise Figure
Supply Bias
Test conditions unless otherwise noted.
1. T = 25ºC, Vsupply = +5 V, Frequency = 900 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +13 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions. It is
expected that the current can increase up to 300mA at P1dB.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85
°C
-65 to +150
°C
+22 dBm
+8 V
400 mA
2W
+250
°C
Ordering Information
Part No.
AH116-S8*
ECP052G*
AH116-S8G
AH116-S8PCB900
Description
½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
½ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 6 June 2005
AH116 / ECP052G
30
25
20
Gain (dB)
15
0
1/2 Watt, High Linearity InGaP HBT Amplifier
Product Information
Typical Device Data
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25°C, unmatched 50 ohm system)
S11
0.8
0.8
6
0.
2.
0
6
0.
1.0
Gain_Maximum Stable Gain
DB(|S[2,1]|)
DB(GMax)
0.
4
S22
Swp Max
5.05GHz
Swp Max
5.05GHz
2.
0
1.0
0
3.
4.
0.2
0
5.0
0.2
10.0
10.0
10
-4
.0
-5.
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Frequency (GHz)
0.8
0.9
1
.4
-0
.4
-0
.0
-2
-0
-0
.6
.6
Swp Min
0.05GHz
-0.8
.0
-2
-0.8
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line.
The return loss plots are shown from 50 – 5050 MHz, with markers placed at 0.5 – 5.05 GHz in 0.5 GHz increments.
S-Parameters (V
cc
= +5 V, I
cc
= 250 mA, T = 25°C, unmatched 50 ohm system, calibrated to device leads)
Freq (MHz)
S11 (dB)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
100
200
400
600
800
1000
-2.72
-2.25
-2.31
-3.08
-5.79
-19.72
-6.06
24.16
20.33
17.23
15.63
15.58
15.22
11.91
133.35
124.95
119.37
98.28
69.70
25.60
-22.67
-1.0
-36.72
-35.31
-34.90
-33.62
-32.10
-31.19
-33.26
29.75
13.96
2.32
-16.36
-37.73
-78.95
-129.67
-2.23
-3.08
-3.32
-3.48
-2.87
-2.27
-1.40
-1.0
-102.97
-137.03
-159.63
-172.70
-176.25
-179.74
173.15
Application Circuit PC Board Layout
Circuit Board Material: .014” Getek, 4 - layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026”
The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning
Shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 6 June 2005
-3
.0
-4
.0
-5.
0
5
.2
-0
2
-0.
Swp Min
0.05GHz
-10.0
0.
4
0
3.
0
4.
5 .0
10.0
-10.
0
-3
.0
AH116 / ECP052G
Typical RF Performance at 25°C
°
Frequency
S21 – Gain
S11 – Input Return Loss
S22 – Output Return Loss
Output P1dB
Output IP3
(+17 dBm / tone, 1 MHz spacing)
1/2 Watt, High Linearity InGaP HBT Amplifier
Product Information
900 MHz Application Circuit (AH116-S8PCB900)
900 MHz
17.5 dB
-18 dB
-7 dB
+28.7 dBm
+43 dBm
+23 dBm
7 dB
+5 V
250 mA
CAP
ID=C2
C=22 pF
PORT
P=1
Z=50 Ohm
CAP
ID=C1
C=22 pF
RES
ID=R1
R=100 Ohm
RES
ID=R4
R=0 Ohm
Vcc = +5 V
D1 = +5.6 V
CAP
ID=C4
C=10000000 pF
CAP
ID=C7
C=1000 pF
CAP
ID=C6
C=10 pF
RES
ID=R2
R=22 Ohm
CAP
ID=C5
C=1000 pF
TLINP
ID=FR-2
Z0=50 Ohm
L=10 mil
Eeff=3.16
Loss=0
F0=0 MHz
RES
ID=R3
R=51 Ohm
SUBCKT
NET="AH116"
1
2
3
4
5
6
7
8
IND
ID=L1
L=33 nH
PORT
P=2
Z=50 Ohm
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
Device / Supply Voltage
Quiescent Current
TLINP
ID=FR-1
Z0=50 Ohm
L=575 mil
Eeff=3.16
Loss=0
F0=0 MHz
CAP
ID=C9
C=4.7 pF
CAP
ID=C3
C=100 pF
This component should be placed at
silk screen marker 11 on the WJ
evaluation board as shown.
C9 is placed at the silkscreen marker ‘11’ or center of component placed at 29 deg. @ 960 MHz away from pin 6.
S21 vs Frequency
20
18
S21 (dB)
S11 (dB)
S11 vs. Frequency
0
-5
-10
-15
-20
-25
-30
-35
840
+25°C
+85°C
-40°C
860
880
900
920
940
S22 (dB)
S22 vs. Frequency
0
-5
-10
-15
-20
-25
-30
-35
840
+25°C
+85°C
-40°C
860
880
900
920
940
16
14
12
10
840
+25°C
+85°C
-40°C
860
880
900
920
940
Frequency (MHz)
Frequency (MHz)
Frequency (MHz)
Noise Figure vs. Frequency
10
8
P1 dB (dBm)
NF (dB)
P1 dB vs. Frequency
30
28
26
24
22
20
840
+25°C
+85°C
-40°C
860
880
900
920
940
ACPR (dBm)
ACPR vs. Channel Power
IS-95, 9 Ch. Fwd, ±885KHz Meas BW, 900 MHz
6
4
2
0
840
+25°C
+80°C
-40°C
860
880
900
920
940
-40
-45
-50
-55
-60
-65
-70
-75
-80
18
19
20
21
22
Output Channel Power (dBm)
+25°C
+85°C
-40°C
23
24
Frequency (MHz)
Frequency (MHz)
OIP3 vs. Frequency
+25°, +13 dBm / tone
OIP3 vs. Temperature
freq. = 900, 901 MHz, +13 dBm /tone
OIP3 vs. Output Power
45
43
OIP3 (dBm)
freq. = 900, 901 MHz, +25°C
45
43
OIP3 (dBm)
45
43
OIP3 (dBm)
41
39
37
35
840
41
39
37
35
41
39
37
860
880
900
920
940
35
-40
-15
10
35
Temperature (°C)
60
85
8
10
12
14
16
18
20
Frequency (MHz)
Output Power (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 6 June 2005
AH116 / ECP052G
Outline Drawing
1/2 Watt, High Linearity InGaP HBT Amplifier
Product Information
AH116-S8 (SOIC-8 Package) Mechanical Information
This package may contain lead-bearing materials. The plating material on the leads is SnPb.
Product Marking
The component will be marked with an
“AH116-S8” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes
/500V
to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 3 at +235° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
Land Pattern
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance
(1)
, Rth
Junction Temperature
(2)
, Tjc
MTTF vs. GND Tab Temperature
1000000
MTTF (million hrs)
Rating
-40 to +85° C
62° C / W
162° C
100000
10000
1000
100
50
60
70
80
90
100
Tab Temperature (° C )
Notes:
1. The thermal resistance is referenced from the junction-to-
case at a case temperature of 85° C. Tjc is a function of
the voltage at pins 6 and 7 and the current applied to pins
6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
250 mA at an 85° C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247° C.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 4 of 6 June 2005
AH116 / ECP052G
1/2 Watt, High Linearity InGaP HBT Amplifier
Product Information
AH116-S8G (Lead-Free Package) Mechanical Information
This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free
(maximum 260°C reflow temperature) and lead (maximum 245°C reflow temperature) soldering processes.
Outline Drawing
Product Marking
The component will be marked with an
“AH116-S8G” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD / MSL Information
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes
/500V
to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating: Level 2 at +260° C convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the
part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a
heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the
region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in degrees.
Mounting Configuration / Land Pattern
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance
(1)
, Rth
Junction Temperature
(2)
, Tjc
Rating
MTTF (million hrs)
MTTF vs. GND Tab Temperature
1000000
100000
10000
1000
100
50
60
70
80
90
100
Tab Temperature (° C )
-40 to +85° C
62° C / W
162° C
Notes:
1. The thermal resistance is referenced from the junction-to-
case at a case temperature of 85° C. Tjc is a function of
the voltage at pins 6 and 7 and the current applied to pins
6, 7, and 8 and can be calculated by:
Tjc = Tcase + Rth * Vcc * Icc
2. This corresponds to the typical biasing condition of +5V,
250 mA at an 85° C case temperature. A minimum
MTTF of 1 million hours is achieved for junction
temperatures below 247° C.
Specifications and information are subject to change without notice.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 5 of 6 June 2005
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