Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
General Description
The AH276 is an integrated Hall sensor with output
driver designed for electronic commutation of brush-
less DC motor applications. The device includes an on-
chip Hall sensor for magnetic sensing, an amplifier
that amplifies the Hall voltage, a Schmitt trigger to
provide switching hysteresis for noise rejection, a tem-
perature compensation circuit to compensate the tem-
perature drift of Hall sensitivity and two
complementary open-collector drivers for sinking
large load current. It also includes an internal band-gap
regulator which is used to provide bias voltage for
internal circuits.
Placing the device in a variable magnetic field, if the
magnetic flux density is larger than threshold B
OP
, the
pin DO will be turned low (on) and pin DOB will be
turned high (off). This output state is held until the
magnetic flux density reverses and falls below B
RP,
then causes DO to be turned high (off) and DOB
turned low (on).
AH276 is available in TO-94 (SIP-4L) package.
AH276
Features
·
·
·
·
·
·
·
·
On-Chip Hall Sensor
3.5V to 16V Supply Voltage
350mA (avg) Output Sink Current
Reversed Supply Voltage Protection
Build in Over Temperature Protection Function
-20
o
C to 85
o
C Operating Temperature
Low Profile TO-94 (SIP-4L) Package
ESD Rating: 300V (Machine Model)
Applications
·
·
·
·
Dual-Coil Brushless DC Motor
Dual-Coil Brushless DC Fan
Revolution Counting
Speed Measurement
TO-94
Figure 1. Package Type of AH276
Apr. 2007 Rev. 1. 2
1
BCD Semiconductor Manufacturing Limited
Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
Functional Block Diagram
V
CC
1
DO
2
AH276
Regulator
Temperature
Compensation
4
GND
Hall
Sensor
Amplifier
Schmitt
Trigger
Output
Driver
3
DOB
Over
Temperature
Protection
Figure 3. Functional Block Diagram of AH276
Ordering Information
AH276
Circuit Type
Package
Z4: TO-94 (SIP-4L)
-
E1: Lead Free
Magnetic Characteristics
A: 10 to 50Gauss
B: 5 to 70Gauss
C: 100Gauss
Package
TO-94
Temperature Range
-20 to 85
o
C
Part Number
AH276Z4-AE1
AH276Z4-BE1
AH276Z4-CE1
Marking ID
AH276Z4-E1
AH276Z4-E1
AH276Z4-E1
Packing Type
Bulk
Bulk
Bulk
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Apr. 2007 Rev. 1. 2
3
BCD Semiconductor Manufacturing Limited
Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
Absolute Maximum Ratings (Note 1)
(T
A
=25
o
C)
Parameter
Supply Voltage
Reverse Protection Voltage
Magnetic Flux Density
Continuous
Output Current
Hold
Peak (start up)
Power Dissipation
Die to atmosphere
Thermal Resistance
Die to package case
Storage Temperature
ESD (Machine Model)
ESD (Human Body Model)
P
D
θJA
θJC
T
STG
I
O
Symbol
V
CC
V
RCC
B
Value
20
-20
Unlimited
350
550
750
550
227
49
-50 to 150
300
2500
Unit
V
V
Gauss
mA
mA
mA
mW
o
C/W
o
C/W
o
AH276
C
V
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Recommended Operating Conditions
(T
A
=25
o
C)
Parameter
Supply Voltage
Ambient Temperature
Symbol
V
CC
T
A
Min
3.5
-20
Max
16
85
Unit
V
o
C
Apr. 2007 Rev. 1. 2
4
BCD Semiconductor Manufacturing Limited
Data Sheet
COMPLEMENTARY OUTPUT HALL EFFECT LATCH
Electrical Characteristics
(T
A
=25
o
C, V
CC
=14V, unless otherwise specified)
Parameter
Output Saturation Voltage
Output Leakage Current
Supply Current
Output Rise Time
Output Fall Time
Switch Time Differential
Output Zener Breakdown Voltage
Thermal Protection Temperature
Thermal Protection Hysteresis
Symbol
V
SAT
I
OL
I
CC
tr
tf
∆t
V
Z
TSD
∆TSD
Test Condition
V
CC
=3.5V, I
O
=100mA
I
O
=350mA
V
CE
=16V
V
CC
=16V, Output Open
R
L
=820Ω, C
L
=20pF
R
L
=820Ω, C
L
=20pF
R
L
=820Ω, C
L
=20pF
Min
Typ
0.3
0.35
0.1
12
3.0
0.3
3.0
55
178
40
0.6
10
16
10
1.5
10
Max
Unit
V
V
µA
mA
µs
µs
µs
V
o
AH276
C
o
C
Magnetic Characteristics
(T
A
=25
o
C)
Parameter
Operating Point
Symbol
B
OP
Grade
A
B
C
A
Releasing Point
B
RP
B
C
Hysteresis
B
HYS
V
DO
(V)
Min
10
5
Typ
Max
50
70
100
Unit
Gauss
Gauss
Gauss
Gauss
Gauss
Gauss
-50
-70
-100
75
-10
-5
Gauss
Off-state
High
Turn off
B
HYS
Turn on
V
SAT
On-state
N
B
RP
0
B
OP
Low
S
Magnetic Flux Density (Gauss)
Apr. 2007 Rev. 1. 2
5
BCD Semiconductor Manufacturing Limited
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