BUK964R2-80E
28 July 2016
N-channel TrenchMOS logic level FET
Product data sheet
1. General description
Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
2. Features and benefits
•
•
•
•
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with Vgst(th) rating of greater than 0.5V at 175 °C
3. Applications
•
•
•
•
•
12V, 24V and 48V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 2
T
mb
= 25 °C;
Fig. 1
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
80
120
349
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
3.4
4.2
mΩ
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 25 A; V
DS
= 64 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
-
37.5
-
nC
Nexperia
BUK964R2-80E
N-channel TrenchMOS logic level FET
5. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to
drain
2
1
3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
6. Ordering information
Table 3.
Ordering information
Package
Name
BUK964R2-80E
D2PAK
Description
plastic single-ended surface-mounted package
(D2PAK); 3 leads (one lead cropped)
Version
SOT404
Type number
7. Marking
Table 4.
Marking codes
Marking code
BUK964R2-80E
Type number
BUK964R2-80E
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
DGR
V
GS
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
R
GS
= 20 kΩ
T
j
≤ 175 °C; DC
T
j
≤ 175 °C; Pulsed
P
tot
I
D
total power dissipation
drain current
T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C; V
GS
= 5 V;
Fig. 2
T
mb
= 100 °C; V
GS
= 5 V;
Fig. 2
I
DM
T
stg
BUK964R2-80E
Min
-
-
-10
[1][2]
Max
80
80
10
15
349
120
120
732
175
Unit
V
V
V
V
W
A
A
A
°C
2 / 13
-15
-
[3]
[3]
-
-
-
-55
peak drain current
storage temperature
T
mb
= 25 °C; pulsed; t
p
≤ 10 µs;
Fig. 3
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 July 2016
Nexperia
BUK964R2-80E
N-channel TrenchMOS logic level FET
Symbol
T
j
I
S
I
SM
E
DS(AL)S
Parameter
junction temperature
Conditions
Min
-55
Max
175
Unit
°C
Source-drain diode
source current
peak source current
T
mb
= 25 °C
pulsed; t
p
≤ 10 µs; T
mb
= 25 °C
I
D
= 120 A; V
sup
≤ 80 V; R
GS
= 50 Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped;
Fig. 4
[1]
[2]
[3]
[4]
[5]
120
P
der
(%)
80
[3]
-
-
120
732
A
A
Avalanche ruggedness
non-repetitive drain-source
avalanche energy
[4][5]
-
485
mJ
Accumulated pulse duration up to 50 hours delivers zero defect ppm
Significantly longer life times are achieved by lowering Tj and or VGS
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Refer to application note AN10273 for further information.
03aa16
240
I
D
(A)
180
003aag356
120
40
(1)
60
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
Continuous drain current as a function of
mounting base temperature
BUK964R2-80E
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 July 2016
3 / 13
Nexperia
BUK964R2-80E
N-channel TrenchMOS logic level FET
10
3
I
D
(A)
10
2
Limit R
DSon
= V
DS
/ I
D
t
p
=10
µ
s
100
µ
s
003aag357
10
DC
1
1 ms
10 ms
100 ms
10
-1
10
-1
1
10
10
2
V
DS
(V)
10
3
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
10
3
I
AL
(A)
10
2
003aag367
(1)
10
(2)
1
(3)
10
-1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time.
9. Thermal characteristics
Table 6.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
Fig. 5
Min
-
Typ
-
Max
0.43
Unit
K/W
R
th(j-a)
minimum footprint ; mounted on a
printed-circuit board
-
50
-
K/W
BUK964R2-80E
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 July 2016
4 / 13
Nexperia
BUK964R2-80E
N-channel TrenchMOS logic level FET
1
Z
th(j-mb)
(K/W)
10
-1
= 0.5
0.2
0.1
003aaf570
0.05
10
-2
P
0.02
t
p
t
p
T
single shot
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
T
t
p
(s)
1
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
10. Characteristics
Table 7.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
Fig. 9; Fig. 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
Fig. 9
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
Fig. 9
I
DSS
drain leakage current
V
DS
= 80 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 80 V; V
GS
= 0 V; T
j
= 175 °C
I
GSS
gate leakage current
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C;
Fig. 12; Fig. 11
Dynamic characteristics
Q
G(tot)
Q
GS
BUK964R2-80E
Min
80
72
1.4
-
0.5
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
0.08
-
2
2
3.4
3.2
-
Max
-
-
2.1
2.45
-
1
500
100
100
4.2
4
10.4
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
Static characteristics
V
GS(th)
total gate charge
gate-source charge
I
D
= 25 A; V
DS
= 64 V; V
GS
= 5 V;
Fig. 13; Fig. 14
All information provided in this document is subject to legal disclaimers.
-
-
123
26.6
©
-
-
nC
nC
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 July 2016
5 / 13
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