TSB712A, TSB712
Datasheet
Precision rail-to-rail input / output 36 V, 6 MHz dual op-amps
Features
•
•
•
•
•
•
•
•
•
•
•
Rail-to-rail input and output
Low offset voltage: 300 µV maximum
Wide supply voltage range: 2.7 V to 36 V
Gain bandwidth product: 6 MHz
Slew rate : 3 V/µs
Low noise : 12 nV/√Hz
Integrated EMI filter
Standard SO8 and miniSO8 packages
2 kV HBM ESD tolerance
Extended temperature range : -40 °C to +125 °C
Automotive-grade available
MiniSO8
SO8
Applications
•
•
•
•
•
•
•
High-side and low-side current sensing
Hall effect sensors
Data acquisition and instrumentation
Test and measurement equipments
Motor control
Industrial process control
Strain gauge
Maturity status link
TSB712A, TSB712
Related products
TSB572
Dual op-amps for the low-
power consumption version
(380 µA with 2.5 MHz GBP)
Description
The
TSB712
and the
TSB712A
dual 6 MHz bandwidth amplifiers feature rail-to-rail
input and output, which is guaranteed to operate from +2.7 V to +36 V single supply
as well as from ±1.35 V to ±18 V dual supplies.
These amplifiers have the advantage of offering a large span of supply voltage and
an excellent input offset voltage of 300 µV maximum at 25 °C.
The combination of wide bandwidth, slew rate, low noise, rail-to-rail capability and
precision makes the
TSB712
and the
TSB712A
useful in a wide variety of
applications such as: filters, power supply and motor control, actuator driving, hall
effect sensors and resistive transducers.
DS12487
-
Rev 2
-
September 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
TSB712A, TSB712
Pin description
1
Pin description
Figure 2.
Pin connections (top view)
OUT1
IN1-
IN1+
V
CC-
V
CC+
OUT2
IN2-
IN2+
MiniSO8/SO8
Pin
1
2
3
4
5
6
7
8
Pin name
OUT1
IN1-
IN1+
V
CC-
IN2+
IN2-
OUT2
V
CC+
Output channel 1
Inverting input channel 1
Non-inverting input channel 1
Negative supply voltage
Non-inverting input channel 2
Inverting input channel 2
Output channel 2
Positive supply voltage
Description
DS12487
-
Rev 2
page 2/33
TSB712A, TSB712
Absolute maximum ratings and operating conditions
2
Absolute maximum ratings and operating conditions
Table 1.
Absolute maximum ratings
Symbol
V
CC
V
id
V
in
I
in
Supply voltage
(1)
Input voltage differential
(2)
Input voltage
Input current
(3)
Storage temperature
R
th-ja
T
j
Thermal resistance junction-to-ambient
(4) (5)
MiniSO-8
Maximum junction temperature
HBM: human body model
(6)
ESD
CDM: charged device model
(7)
Latch-up immunity
190
150
2
1
100
Parameter
Value
+40 or ±20
±2
(V
CC-
) - 0.2 to (V
CC+
) + 0.2
±10
-65 to +150
Unit
V
V
V
mA
°C
°C / W
°C
kV
kV
mA
1. All voltage values, except the differential voltage are with respect to the network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. The maximum input
voltage differential value may be extended to the condition that the input current is limited to ±10 mA. See
Section 5.2 Input
pin voltage range.
3. Input current must be limited by a resistor in series with the inputs when the input voltage is beyond the rails (see
Section 5.2 Input pin voltage range).
4. Short-circuits can cause excessive heating and destructive dissipation.
5. R
th
are typical values.
6. Human body according to JEDEC standard JESD22-A114F.
7. According to ANSI/ESD STM5.3.1.
Table 2.
Operating conditions
Symbol
V
CC
V
icm
T
oper
Supply voltage
Common mode input voltage range
Operating free air temperature range
Parameter
Value
2.7 V to 36 V
(V
CC-
) to (V
CC+
) + 0.1 V
-40 °C to +125 °C
DS12487
-
Rev 2
page 3/33
TSB712A, TSB712
Electrical characteristics
3
Electrical characteristics
Table 3.
Electrical characteristics at V
CC
= 36 V, V
ICM
= V
OUT
= V
CC
/ 2, T
amb
= 25 °C and R
L
connected to
V
CC
/ 2 (unless otherwise specified).
Symbol
Parameter
Conditions
DC performance
TSB712A, T = 25 °C,
V
CC-
≤ V
ICM
≤ V
CC+
- 1.5 V
TSB712A, T = 25 °C,
V
CC-
≤ V
ICM
≤ V
CC+
TSB712A, -40 °C < T < 125 °C,
V
CC-
≤ V
ICM
≤ V
CC+
- 1.5 V
TSB712A, -40 °C < T < 125 °C,
V
io
Input offset voltage
V
CC-
≤ V
ICM
≤ V
CC+
TSB712, T = 25 °C,
V
CC-
≤ V
ICM
≤ V
CC+
- 1.5 V
TSB712, T = 25 °C,
V
CC-
≤ V
ICM
≤ V
CC+
- 1.5 V
TSB712, -40 °C < T < 125 °C,
V
CC-
≤ V
ICM
≤ V
CC+
- 1.5 V
TSB712, -40 °C < T < 125 °C,
V
CC-
≤ V
ICM
≤ V
CC+
ΔV
io
/ ΔT Input offset voltage drift
ΔV
io
Long-term input offset voltage
drift
-40°C < T < 125 °C
(1)
T = 25 °C
(2)
V
ICM
= V
CC+
, T = 25 °C
I
IB
Input bias current
(3)
V
ICM
= V
CC+,
-40 °C < T < 125 °C
V
ICM
= V
CC-,
T = 25 °C
V
ICM
= V
CC-,
-40 °C < T < 125 °C
I
IO
Input offset current
(4)
V
ICM
= V
CC+
V
ICM
= V
CC-
0
0
-100
-200
10
10
0.57
300
900
0
0
nA
± 300
Min.
Typ.
Max.
Unit
± 650
± 580
± 930
µV
± -800
± -1200
± -1100
± -1400
2.8
µV / °C
µV / √mo
DS12487
-
Rev 2
page 4/33
TSB712A, TSB712
Electrical characteristics
Symbol
Parameter
R
L
≥ 10 kΩ,
Conditions
Min.
Typ.
Max.
Unit
(V
CC-
) + 0.5 V ≤ V
OUT
≤ (V
CC+
) - 0.5 V,
A
VD
Open loop gain
T = 25 °C
R
L
≥ 10 kΩ,
(V
CC-
) + 0.5 V ≤ V
OUT
≤ (V
CC+
) - 0.5 V,
-40 °C < T < 125 °C
(V
CC-
) ≤ V
ICM
≤ ( V
CC+
) - 1.5 V,
T = 25 °C
(V
CC-)
≤ V
ICM
≤ (V
CC+)
- 1.5 V,
-40 °C < T < 125 °C
TSB712 A (V
CC-
) ≤ V
ICM
≤ (V
CC+
),
CMR
Common-mode rejection ratio
20 log (∆V
INCM
/ ∆V
IO
)
T = 25 °C
TSB712 A (V
CC-
) ≤ V
ICM
≤ (V
CC+
),
-40 °C < T < 125 °C
TSB712 (V
CC-
) ≤ V
ICM
≤ (V
CC+
),
T = 25 °C
TSB712 (V
CC-
) ≤ V
ICM
≤ (V
CC+
),
-40 °C < T < 125 °C
SVR
Power supply rejection ratio
20 log (∆V
CC
/ ∆V
IO
)
High level output voltage (drop
voltage from V
CC+
)
5 V < (V
CC+
) - (V
CC-
) < 36 V, V
ICM
= V
CC / 2
-40 °C < T < 125 °C
No load, -40 °C < T < 125 °C
V
OH
I
SOURCE
= 2 mA, -40 °C < T < 125 °C
I
SOURCE
= 15 mA, -40 °C < T < 125 °C
No load , -40 °C < T < 125 °C
V
OL
Low level output voltage
I
SINK
= 2 mA, -40 °C < T < 125 °C
I
SINK
= 15 mA , -40 °C < T < 125 °C
I
SINK
I
OUT
I
SOURCE
V
OUT
= V
CC
, T = 25 °C
V
OUT
= V
CC
, -40 °C < T < 125 °C
V
OUT
= 0 V, T = 25 °C
V
OUT
= 0 V, -40 °C < T < 125 °C
No load, T = 25 °C
No load, -40 °C < T < 125 °C
AC performance
GBP
SR
Gain bandwidth product
Slew rate
R
L
= 10 kΩ, C
L
= 100 pF
9 V step, R
L
= 10 kΩ, C
L
= 100 pF,
A
V
= 1 V/V, 10% to 90%
V
IN
= 1 Vrms , R
L
= 10 kΩ, A
V
= +1,
THD+N
Total harmonic distorsion + noise
f = 1 kHz, BW = 22 kHz
V
IN
= 1 Vrms , R
L
= 1 kΩ, A
V
= +1,
f = 1 kHz, BW = 22 kHz
110
125
105
115
130
110
dB
100
120
95
90
120
85
100
125
120
200
1000
120
200
1000
mV
25
20
25
20
50
mA
50
I
CC
Supply current by op-amp
1.8
3
mA
4.5
2.2
6
3
MHz
V / µs
0,0003
%
0,00034
DS12487
-
Rev 2
page 5/33
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