HS5A - HS5M
Taiwan Semiconductor
5A, 50V - 1000V High Efficient Surface Mount Rectifier
FEATURES
●
●
●
●
●
Glass passivated junction chip
Ideal for automated placement
Low forward voltage drop
Low profile package
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
VALUE
5
50 - 1000
150
150
UNIT
A
V
A
°C
DO-214AB (SMC)
Single die
APPLICATIONS
● High frequency rectification
● Freewheeling application
● Switching mode converters and inverters in computer, automotive and
telecommunication.
Configuration
MECHANICAL DATA
●
●
●
●
Case: DO-214AB (SMC)
Molding compound meets UL 94V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Moisture sensitivity level: level 1, per J-STD-020
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.21 g (approximately)
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms
single half sine-wave uperimposed on
rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M UNIT
HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M
50
35
50
100
70
100
200
140
200
300
210
300
5
150
- 55 to +150
- 55 to +150
400
280
400
600
420
600
800
560
800
1000
700
1000
A
A
°C
°C
V
V
1
Version:I1708
HS5A - HS5M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJA
LIMIT
60
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
HS5A
HS5B
HS5D
HS5F
HS5G
HS5J
HS5K
HS5M
HS5A
HS5B
HS5D
HS5F
HS5G
HS5J
HS5K
HS5M
(2)
CONDITIONS
SYMBOL
TYP.
-
MAX.
-
-
1.35
UNIT
V
V
V
Forward voltage per diode
(1)
I
F
= 3A, T
J
= 25°C
V
F
-
-
-
I
F
= 5A, T
J
= 25°C
V
F
-
-
T
J
= 25°C
T
J
= 125°C
-
-
1.00
1.30
1.70
10
250
V
V
V
µA
µA
Forward voltage per diode
(1)
Reverse current @ rated V
R
per diode
I
R
Junction capacitance
Reverse recovery time
HS5A
HS5B
HS5D
HS5F
HS5G
HS5J
HS5K
HS5M
HS5A
HS5B
HS5D
HS5F
HS5G
HS5J
HS5K
HS5M
80
1 MHz, V
R
=4.0V
C
J
50
-
pF
-
pF
-
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
t
rr
-
50
ns
75
ns
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
2
Version:I1708
HS5A - HS5M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
6
AVERAGE FORWARD CURRENT (A)
175
150
JUNCTION CAPACITANCE (pF)
125
100
75
50
25
0
HS5J - HS5M
f=1.0MHz
Vsig=50mVp-p
0.1
1
10
100
HS5A - HS5G
Fig.2 Typical Junction Capacitance
5
4
3
2
1
0
0
25
50
75
100
125
150
RESISTIVE OR
INDUCTIVE LOAD
AMBIENT TEMPERATURE (
o
C)
REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
100 10
Fig.4 Typical Forward Characteristics
1
10
0.1
UF1DLW
T
J
=125°C
HS5A - HS5D
100
T
J
=100
°
C
10
T
J
=25
°
C
1
0
20
40
60
80
100
120
140
T
J
=25°C
1
0.01
HS5G
Pulse width
0.001
0.1
0.2
0.3
0.4
0.4
0.5
0.6
0.6
0.7
0.8
HS5J - HS5M
0.8
0.9
1
1
1.2
1.1
1.4
1.2
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:I1708
(A)
HS5A - HS5M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
200
PEAK FORWARD SURGE CURRENT (A)
100
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:I1708
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