FLM1213-6F
X, Ku-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 37.5dBm (Typ.)
High Gain: G1dB = 7.0dB (Typ.)
High PAE:
η
add = 27% (Typ.)
Low IM3 = -45dBc@Po = 25dBm
Broad Band: 12.7 ~ 13.2GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed
DESCRIPTION
The FLM1213-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain
in a 50 ohm system.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
31.2
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-Added Efficiency
Gain Flatness
3rd Order Intermodulation
Distortion
Thermal Resistance
CASE STYLE: IA
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η
add
∆
G
IM3
Rth
f = 13.2GHz,
∆f
= 10MHz
2-Tone Test
Pout = 25dBm S.C.L.
Channel to Case
VDS = 10V,
IDS
=
0.6 IDSS(Typ.),
f = 12.7 ~ 13.2GHz,
ZS = ZL = 50Ω
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 1800mA
VDS = 5V, IDS = 120mA
IGS = -120µA
Min.
-
-
-0.5
-5
36.5
6.0
-
-
-
-42
-
Limit
Typ. Max.
2800
2350
-1.5
-
37.5
7.0
1800
27
-
-45
4.0
4200
-
-3.0
-
-
-
2100
-
±0.6
-
4.5
Unit
mA
mS
V
V
dBm
dB
mA
%
dB
dBc
°C/W
G.C.P.: Gain Compression Point
Edition 1.3
December 2003
1
FLM1213-6F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM3 vs. INPUT POWER
VDS=10V
f1 = 13.2 GHz
f2 = 13.21 GHz
2-tone test
-10
Pout
IM3
Total Power Dissipation (W)
40
Output Power (S.C.L.) (dBc)
29
27
25
23
21
19
30
20
-30
-40
-50
10
0
50
100
150
200
13
15
17
19
21
23
25
27
Case Temperature (°C)
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS = 10V
P1dB
OUTPUT POWER vs. INPUT POWER
VDS = 10V
f = 12.95 GHz
Pout
36
34
32
30
η
add
30
20
10
Output Power (dBm)
38
36
34
32
Pin = 32dBm
26dBm
24dBm
12.7 12.8 12.9 13.0 13.1 13.2
22
24
26
28
30
32
34
Frequency (GHz)
Input Power (dBm)
2
η
add (%)
28dBm
Output Power (dBm)
40
38
IM3 (dBc)
-20
FLM1213-6F
X, Ku-Band Internally Matched FET
+j50
+j100
+j25
12.5
12.6
12.7
13.3
13.4
13.2
13.1
13.0
13.4
12.9
13.2
12.8
13.0
12.7
12.8
12.5
12.5 0.1
S11
S22
+90°
S21
S12
+j250
+j10
12.8
12.9
0
10
12.5
25
12.7
12.8
50Ω
13.0
13.1
13.2
13.3
250
180°
1
2
3
4
5
0°
SCALE FOR |S21|
SCALE FOR |S12|
13.4
-j10
13.0
13.2
13.4
-j250
12.7
12.6
-j25
-j50
-j100
0.2
-90°
S-PARAMETERS
VDS = 10V, IDS = 1800mA
FREQUENCY
(MHZ)
12500
12600
12700
12800
12900
13000
13100
13200
13300
13400
S11
MAG
.363
.292
.259
.283
.331
.381
.426
.467
.493
.509
S21
ANG
-170.0
-162.8
-147.8
-134.2
-127.7
-127.4
-130.4
-133.5
-138.1
-143.1
S12
ANG
MAG
.089
.098
.106
.109
.111
.111
.108
.107
.106
.105
S22
ANG
-147.7
-162.0
-177.7
167.6
154.2
142.7
131.1
121.0
112.3
102.8
MAG
2.314
2.423
2.485
2.462
2.388
2.291
2.171
2.065
1.948
1.858
MAG
.666
.605
.549
.483
.430
.398
.374
.365
.373
.386
ANG
96.7
79.7
61.7
42.8
23.9
6.7
-10.3
-24.0
-37.4
-47.0
-120.0
-134.4
-149.4
-163.9
-177.9
169.6
157.7
146.3
136.7
126.8
3
FLM1213-6F
X, Ku-Band Internally Matched FET
Case Style "IA"
Metal-Ceramic Hermetic Package
1.5 Min.
(0.059)
1
2-R 1.25±0.15
(0.049)
0.1
(0.004)
4
2
3
0.5
(0.020)
1.5 Min.
(0.059)
1.8±0.15
(0.071)
3.2 Max.
(0.126)
8.1
(0.319)
0.2 Max.
(0.008)
1.15
(0.045)
9.7±0.15
(0.382)
13.0±0.15
(0.512)
16.5±0.15
(0.650)
1.
2.
3.
4.
Gate
Source (Flange)
Drain
Source (Flange)
Unit: mm(inches)
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS EUROPE, GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
4
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