CAS300M17BM2
1.7kV, 8.0 mΩ All-Silicon Carbide
Half-Bridge Module
C2M MOSFET and Z-Rec
TM
Diode
Features
V
DS
E
sw, Total @ 300A, 150 ˚C
R
DS(on)
Package
1.7 kV
23 mJ
8.0 mΩ
62mm x 106mm x 30mm
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Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Ease of Paralleling
Copper Baseplate and Aluminum Nitride Insulator
System Benefits
Enables Compact and Lightweight Systems
High Efficiency Operation
Mitigates Over-voltage Protection
Reduced Thermal Requirements
Reduced System Cost
Applications
HF Resonant Converters/Inverters
Solar and Wind Inverters
UPS and SMPS
Motor Drive
Traction
Part Number
CAS300M17BM2
Package
Half-Bridge Module
Marking
CAS300M17BM2
Maximum Ratings (T
C
= 25˚C unless otherwise specified)
Symbol
V
DSmax
V
GSmax
V
GSop
I
D
I
D(pulse)
I
F
Parameter
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
Continuous MOSFET Drain Current
Pulsed Drain Current
Continuous Diode Forward Current
Value
1.7
-10/+25
-5/20
325
225
900
556
353
-40 to +150
-40 to +125
5.0
15
1760
A
Unit
kV
V
V
A
A
Absolute maximum values
Recommended operational values
V
GS
= 20 V, T
C
= 25 ˚C
V
GS
= 20 V, T
C
= 90 ˚C
Pulse width tp limited by T
J(max)
V
GS
= -5 V, T
C
= 25 ˚C
V
GS
= -5 V, T
C
= 90 ˚C
Fig. 26
Test Conditions
Notes
T
Jmax
T
C
,T
STG
V
isol
L
Stray
P
D
Junction Temperature
Case and Storage Temperature Range
Case Isolation Voltage
Stray Inductance
Power Dissipation
˚C
˚C
kV
nH
W
AC, 50 Hz , 1 min
Measured between terminals 2 and 3
T
C
= 25 ˚C, T
J
= 150 ˚C
Fig. 25
Subject to change without notice.
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1
Electrical Characteristics (T
C
= 25˚C unless otherwise specified)
Symbol
V
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
E
on
E
Off
R
G (int)
Q
GS
Q
GD
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
SD
Q
C
Parameter
Drain - Source Blocking Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
On State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Switching Energy
Turn-Off Switching Energy
Internal Gate Resistance
Gate-Source Charge
Gate-Drain Charge
Total Gate Charge
Turn-on delay time
Rise Time
Turn-off delay time
Fall Time
Diode Forward Voltage
Total Capacitive Charge
1.8
2.5
700
1500
1
8.0
16.2
133
131
20
2.5
0.08
13.0
10.0
3.7
273
324
1076
105
72
211
56
1.7
2.2
4.4
2.0
2.5
ns
ns
ns
ns
V
μC
V
DD
= 900V, V
GS
= -5/+20V,
I
D
= 300 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Note: IEC 60747-8-4, pg 83
Inductive load
I
F
= 300 A, V
GS
= 0
I
F
= 300 A, V
GS
= 0 , T
J
= 150 ˚C
I
SD
= 300 A, V
DS
= 900 V, T
J
=
25°C, di
SD
/dt = 9 kA/μs, V
GS
= -5 V
nC
mJ
mJ
Ω
V
DD
= 900 V, V
GS
= -5V/+20V
I
D
= 300 A, R
G(ext)
= 2.5 Ω
Load = 77 μH, T
J
= 150 ˚C
Note: IEC 60747-8-4 Definitions
f = 1 MHz, V
AC
= 25 mV
V
DD
= 900 V, V
GS
= -5V/+20V,
I
D
= 300 A, Per JEDEC24 pg 27
Fig. 15
nF
V
DS
= 1 kV, f = 200 kHz,
V
AC
= 25 mV
Fig.
16, 17
2000
4000
600
10
20
Min.
Typ.
Max.
1.7
Unit
kV
V
μA
μA
nA
mΩ
S
Test Conditions
V
GS,
= 0, I
D
= 2 mA
V
D
= V
G,
I
D
= 15 mA
V
DS
= 1.7 kV, V
GS
= 0
V
DS
= 1.7 kV,V
GS
= 0, T
J
= 150 ˚C
V
GS
= 25 V, V
DS
= 0
V
GS
= 20 V, I
DS
= 300 A
V
GS
= 20V, I
DS
= 300 A,T
J
= 150 ˚C
V
DS
= 20 V
,
I
DS
= 300 A
V
DS
= 20 V
,
I
D
= 300 A, T
J
= 150 ˚C
Fig. 4,
5, 6
Fig. 8
Note
Fig. 29
Fig. 7
Fig. 22
Fig. 23
Fig. 10
Fig. 11
Thermal Characteristics
Symbol
R
thJCM
R
thJCD
Parameter
Thermal Resistance Juction-to-Case for MOSFET
Thermal Resistance Juction-to-Case for Diode
Min.
Typ.
0.067
0.060
Max.
0.071
0.065
Unit
˚C/W
Test Conditions
Note
Fig. 27
Fig. 28
Additional Module Data
Symbol
W
M
Weight
Mounting Torque
Clearance Distance
Creepage Distance
Parameter
Max.
300
5
9
30
40
Unit
g
Nm
Test Condtion
To heatsink and terminals
Terminal to terminal
Terminal to terminal
Terminal to baseplate
mm
mm
mm
2
CAS300M17BM2,Rev. B
Typical Performance
Figure 1. Output Characteristics T
J
= -40
˚
C
Figure 2. Output Characteristics T
J
= 25
˚
C
Figure 3. Output Characteristics T
J
= 150
˚
C
Figure 4. Normalized On-Resistance vs. Temperature
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
CAS300M17BM2,Rev. B
Figure 6.
On-Resistance vs. Temperature for
Various Gate-Source Voltage
3
Typical Performance
Figure 7. Threshold Voltage vs. Temperature
Figure 8. Transfer Characteristic for Various
Junction Temperatures
Figure 9. Diode Characteristic at -40
˚
C
Figure 10.
Diode Characteristic at 25
˚
C
Figure 11.
Diode Characteristic at 150
˚
C
Figure 12. 3
rd
Quadrant Characteristic at -40
˚
C
4
CAS300M17BM2,Rev. B
Typical Performance
Figure 13.
3
rd
Quadrant Characteristic at 25
˚
C
Figure 14.
3
rd
Quadrant Characteristic at 150
˚
C
Figure 15. Gate Charge Characteristics
Figure 16. Capacitances vs. Drain-Source
Voltage (0 - 200 V)
Figure 17.
Capacitances vs. Drain-Source
Voltage (0 - 1 kV)
CAS300M17BM2,Rev. B
Figure 18.
Output Capacitor Stored Energy
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