H11G1X, H11G2X, H11G3X
H11G1, H11G2, H11G3
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 2 available lead forms : -
- STD
-
G form
2.54
7.0
6.0
1.2
7.62
6.62
4.0
3.0
1
2
3
Dimensions in
mm
6
5
4
7.62
DESCRIPTION
The H11G_ series are optically coupled isolators
consisting of an infrared light emitting diode and
0.5
a high voltage NPN silicon photo darlington
3.0
which has an integral base-emitter resistor to
0.26
3.35
0.5
optimise switching speed and elevated
temperature characteristics in a standard 6pin
ABSOLUTE MAXIMUM RATINGS
dual in line plastic package.
(25°C unless otherwise specified)
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High Current Transfer Ratio ( 1000% min)
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High BV
CEO
(H11G1 - 100V min.)
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Low collector dark current :-
100nA max. at 80V V
CE
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Low input current 1mA I
F
APPLICATIONS
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Modems
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Copiers, facsimiles
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Numerical control machines
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
13°
Max
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Peak Forward Current
(1
µ
s pulse, 300pps)
Reverse Voltage
Power Dissipation
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
H11G3, H11G2, H11G1
Collector-base Voltage BV
CBO
H11G3, H11G2, H11G1
Emitter-baseVoltage BV
ECO
Power Dissipation
POWER DISSIPATION
55, 80, 100V
55, 80, 100V
6V
200mW
60mA
3A
3V
100mW
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
Total Power Dissipation
10.16
260mW
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
7/12/00
DB92008m-AAS/a1
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
Collector-emitter Breakdown (BV
CEO
)
H11G1
H11G2
H11G3
Collector-base Breakdown (BV
CBO
)
H11G1
H11G2
H11G3
Emitter-base Breakdown (BV
EBO
)
Collector-emitter Dark Current (I
CEO
)
H11G1
H11G2
H11G3
Collector Output Current ( I
C
)
H11G1, H11G2
H11G1, H11G2
H11G3
Collector-emitter Saturation Voltage V
CE(SAT)
H11G1, H11G2
H11G1, H11G2
H11G3
Input to Output Isolation Voltage V
ISO
Input-output Isolation Resistance
Input-output Capacitance
Turn-on Time
Turn-off Time
R
ISO
Cf
ton
toff
MIN TYP MAX UNITS
1.2
3
10
1.5
V
V
µ
A
V
V
V
V
V
V
V
100
100
100
nA
nA
nA
TEST CONDITION
I
F
= 10mA
I
R
= 10
µ
A
V
R
= 6V
I
C
= 1mA
I
C
= 1mA
I
C
= 1mA
I
C
=
I
C
=
I
C
=
I
E
=
100
µ
A
100
µ
A
100
µ
A
0.1mA
Output
100
80
55
100
80
55
6
V
CE
= 80V
V
CE
= 60V
V
CE
= 30V
10mA I
F
, 1.2V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 5V V
CE
1mA I
F
, 1mA I
C
16mA I
F
, 50mA I
C
20mA I
F
, 50mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V = 0, f =1MHz
I
F
= 10mA, V
CC
= 5V,
R
L
= 100
Ω,
f = 30Hz,
pulse width equal to
or less than 300
µ
s
Coupled
100
5
2
1.0
1.2
1.2
5300
7500
10
11
0.5
5
100
mA
mA
mA
V
V
V
V
RMS
V
PK
Ω
pF
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
FIGURE 1
V
CC
Input
I
F
= 10mA
100
Ω
t
on
t
r
Input
Output
Output
10%
90%
10%
90%
t
off
t
f
7/12/00
DB92008m-AAS/a1
Collector Power Dissipation vs. Ambient Temperature
250
Collector power dissipation P
C
(mW)
200
100
Normalized Output Current vs.
Collector-emitter Voltage
50mA
Normalized output current
10
10mA
1.0
I
F
= 1mA
0.1
Normalized to
I
F
= 1mA
(300
µ
s pulse),
V
CE
= 5V
0
1
2
3
4
5
6
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
80
70
0.01
Collector-emitter voltage V
CE
( V )
Normalized Output Current vs.
Ambient Temperature
100
50mA
Normalized output current
10
10mA
1.0
I
F
= 1mA
0.1
Normalized to
I
F
= 1mA
(300
µ
s pulse),
V
CE
= 5V
T
A
= 25 °C
-50
-25
0
25
50
75
Ambient temperature T
A
( °C )
Collector Dark Current vs.
Ambient Temperature
100k
(nA)
V
CE
= 80V
10k
100
Forward current I
F
(mA)
60
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Normalized Output Current vs.
Input Current
100
0.01
Normalized output current
10
Collector dark current I
CEO
1k
1.0
Normalized to
I
F
= 1mA
(300
µ
s pulse),
V
CE
= 5V
T
A
= 25 °C
0.1
1.0
10
100
50V
V
CE
100
0.1
10
1
-30
0
25
50
V
CE
= 10V
75
100
0.01
Input current I
F
(mA)
7/12/00
Ambient temperature T
A
( °C )
DB92008m-AAS/a1
FPGA/CPLD
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