Bulletin I27133 rev. I 09/04
IRK.105 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500V
RMS
isolating voltage
ADD-A-pak
TM
GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al
2
0
3
DBC insulator
Heatsink grounded
105 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
I
T(AV)
or I
F(AV)
@ 85°C
I
O(RMS)
(*)
I
TSM
@ 50Hz
I
FSM
@ 60Hz
I t
I
2
√t
V
RRM
range
T
STG
T
J
(*) As AC switch.
2
IRK.105
105
235
1785
1870
15.91
14.52
159.1
400 to 1600
- 40 to 150
- 40 to130
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
o
@ 50Hz
@ 60Hz
C
C
Document Number: 93742
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1
IRK.105 Series
Bulletin I27133 rev. I 09/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
06
08
IRK.105
10
12
14
16
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
V
V
400
600
800
1000
1200
1400
1600
500
700
900
1100
1300
1500
1700
400
600
800
1000
1200
1400
1600
I
RRM
I
DRM
130°C
mA
20
On-state Conduction
Parameters
I
T(AV)
I
F(AV)
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
or
I
FSM
Max. peak, one cycle
non-repetitive on-state
or forward current
235
A
1785
1870
1500
1570
2000
2100
I t
2
IRK.105
Units
Conditions
180
o
conduction, half sine wave,
T
C
= 85
o
C
105
I
(RMS)
t =10ms
t =10ms
t =10ms
t =10ms
t =10ms
t =10ms
t =8.3ms reapplied
or
I
(RMS)
Sinusoidal
half wave,
Initial T
J
= T
J
max.
No voltage
100% V
RRM
T
J
= 25
o
C,
No voltage
100% V
RRM
T
J
= 25
o
C,
t =8.3ms reapplied
t =8.3ms no voltage reapplied
t =8.3ms reapplied
KA
2
s
t =8.3ms reapplied
t =8.3ms no voltage reapplied
K A
2
√s
V
mΩ
V
t = 0.1 to 10ms, no voltage reappl. T
J
=T
J
max
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25°C
Max. I t for fusing
2
15.91
14.52
11.25
10.27
20.00
18.30
Initial T
J
= T
J
max.
I
2
√t
Max. I
2
√t
for fusing (1)
voltage (2)
159.1
0.80
0.85
2.37
2.25
1.64
V
T(TO)
Max. value of threshold
r
t
V
TM
V
FM
di/dt
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
I
H
I
L
Max. holding current
Max. latching current
T
J
= 25
o
C, from 0.67 V
DRM
,
150
250
mA
400
A/µs
I
TM
=π x I
T(AV)
,
I
g
= 500mA,
t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V, resistive load
(3) 16.7% x p x I
AV
< I < p x I
AV
(1) I
2
t for time t
x
=
I
2
√t
x
√t
x
(4) I > p x I
AV
(2) Average power
=
V
T(TO)
x I
T(AV)
+
r
t
x (I
T(RMS)
)
2
Document Number: 93742
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2
IRK.105 Series
Bulletin I27133 rev. I 09/04
Triggering
Parameters
P
GM
I
GM
Max. peak gate power
IRK. 105
12
3
3
10
4.0
2.5
1.7
270
150
80
Units
W
A
Conditions
P
G(AV)
Max. average gate power
Max. peak gate current
gate voltage
V
GT
Max. gate voltage
required to trigger
I
GT
Max. gate current
required to trigger
V
GD
I
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
-V
GM
Max. peak negative
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
T
J
= 25°C
T
J
= 125°C
0.25
6
V
mA
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Blocking
Parameters
I
RRM
I
DRM
V
INS
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
RMS isolation voltage
2500 (1 min)
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
V
V/µs
50 Hz, circuit to base, all terminals
shorted
T
J
= 130
o
C, linear to 0.67 V
DRM
,
gate open circuit
20
mA
T
J
= 130
o
C, gate open circuit
IRK.105
Units
Conditions
(5) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. IRKT105/16AS90.
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating
temperature range
Storage temp. range
resistance, junction
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
0.1
5
3
110 (4)
TO-240AA
Nm
gr (oz)
JEDEC
IRK.105
- 40 to 130
- 40 to 150
0.135
Units
°C
Conditions
R
thJC
Max. internal thermal
Per module, DC operation
K/W
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
∆R
Conduction (per Junction)
Devices
IRK.105
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Sine half wave conduction
180
0.04
o
Rect. wave conduction
30
0.12
o
120
0.05
o
90
0.06
o
60
0.08
o
180
0.03
o
120
o
0.05
90
o
0.06
60
o
0.08
30
o
0.12
Units
°C/ W
Document Number: 93742
www.vishay.com
3
IRK.105 Series
Bulletin I27133 rev. I 09/04
Ordering Information Table
Device Code
IRK
1
1
2
3
4
5
6
-
-
-
-
-
-
T
2
105
3
/
16
4
A
5
S90
6
IRK.106 types
With no auxiliary cathode
Module type
Circuit configuration (See Circuit Configuration table below)
Current code
* *
Voltage code (See Voltage Ratings table)
A : Gen V
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
e.g. : IRKT106/16A etc.
* *
Available with no auxiliary cathode.
To specify change:
105 to 106
Outline Table
Dimensions are in millimeters and [inches]
IRKT
(1)
~
IRKH
(1)
~
IRKL
(1)
~
IRKN
(1)
-
+
(2)
+
(2)
+
(2)
(2)
+
-
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1
(4) (5)
-
(3)
-
(3)
K2 G2
(7) (6)
(3)
+
G1 K1
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 93742
www.vishay.com
4
IRK.105 Series
Bulletin I27133 rev. I 09/04
Maximum Allowable Cas T
e emperature (°C)
IR
K.105.. S
eries
R
thJC
(DC) = 0.27 K/ W
Maximum Allowable Case T
emperature (°C)
130
120
110
130
120
110
IR
K.105.. S
eries
R
(DC) = 0.27 K/ W
thJC
Conduction Angle
Conduction Period
100
90
80
70
100
90
80
70
30°
60°
30°
60°
90°
120°
0
20
40
60
180°
DC
90°
120°
180°
0
20
40
60
80
100
120
80 100 120 140 160 180
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
160
140
120
100
80
60
Conduction Angle
Fig. 2 - Current Ratings Characteristics
200
180
160
140
120
180°
120°
90°
60°
30°
R Limit
MS
Maximum Average On-state Power Loss (W)
DC
180°
120°
90°
60°
30°
MS
100 R Limit
80
60
40
20
0
0
20
40
60
80 100 120 140 160 180
Average On-state Current (A)
IRK.105.. S
eries
Per Junction
T
J
= 130°C
Conduction Period
40
20
0
0
20
40
60
IRK.105.. S
eries
Per Junction
T
J
= 130°C
80
100
120
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
800
700
1
IRK.105.. S
eries
Per Junction
10
100
1800
1600
1400
1200
1000
800
Fig. 4 - On-state Power Loss Characteristics
Peak Half S Wave On-state Current (A)
ine
Peak Half S Wave On-state Current (A)
ine
At Any Rated Load Condition And With
Rated V
RRM
Ap plied Following S
urge.
Initial T
J
= 130°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Maximum Non Repetitive S
urge Current
Versus Pulse T in Duration. Control
ra
Of Conduc tion May Not Be Maintained.
Initial T = 130°C
J
No Volta ge Reapp lied
Rated V
RRM
Reapp lied
IR
K.105.. S
eries
Per Junction
0.1
Pulse T
rain Duration (s)
1
600
0.01
Number Of Equa l Amplitud e Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93742
www.vishay.com
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