IDT74LVC827A
3.3V CMOS 10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
3.3V CMOS
10-BIT BUFFER/DRIVER
WITH 3-STATE OUTPUTS
AND 5 VOLT TOLERANT I/O
• 0.5 MICRON CMOS Technology
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
• V
CC
= 3.3V ± 0.3V, Normal Range
• V
CC
= 2.7V to 3.6V, Extended Range
• CMOS power levels (0.4µ W typ. static)
µ
• Rail-to-rail output swing for increased noise margin
• All inputs, outputs, and I/O are 5V tolerant
• Supports hot insertion
• Available in SOIC, SSOP, QSOP, and TSSOP packages
IDT74LVC827A
FEATURES:
DESCRIPTION:
This 10-bit buffer/driver is built using advanced CMOS technology. The
LVC827A device provides a high-performance bus interface for wide data
paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with active-low inputs so
that if either output-enable (OE1 or
OE2)
input is high, all ten outputs are in
the high-impedance state. The LVC827A provides true data at its outputs.
The LVC827A has been designed with a ±24mA output driver. This
driver is capable of driving a moderate to heavy load while maintaining
speed performance.
Inputs can be driven from either 3.3V or 5V devices. This feature allows
the use of this device as a translator in a mixed 3.3V/5V system environment.
DRIVE FEATURES:
• High Output Drivers: ±24mA
• Reduced system switching noise
APPLICATIONS:
• 5V and 3.3V mixed voltage systems
• Data communication and telecommunication systems
FUNCTIONAL BLOCK DIAGRAM
OE
1
OE
2
1
13
A
1
2
23
Y
1
TO NINE OTHER CHANNELS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
© 1999 Integrated Device Technology, Inc.
OCTOBER 1999
DSC-4647/1
IDT74LVC827A
3.3V CMOS 10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Description
Max
V
TERM
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Continuous Clamp Current,
V
I
< 0 or V
O
< 0
Continuous Current through each
V
CC
or GND
–0.5 to +6.5
–65 to +150
–50 to +50
–50
±100
T
STG
I
OUT
I
IK
I
OK
I
CC
I
SS
Unit
V
°C
mA
mA
mA
OE
1
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
A
10
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
Y
1
Y
2
Y
3
Y
4
Y
5
Y
6
Y
7
Y
8
Y
9
Y
10
OE
2
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
C
I/O
Parameter
(1)
Input Capacitance
Output Capacitance
I/O Port Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
V
IN
= 0V
Typ.
4.5
5.5
6.5
Max.
6
8
8
Unit
pF
pF
pF
NOTE:
1. As applicable to the device type.
SOIC/ SSOP/ QSOP/ TSSOP
TOP VIEW
PIN DESCRIPTION
Pin Name
OEx
Ax
Yx
I/O
I
I
O
Description
When both are LOW the outputs are enabled. When
either one or both are HIGH the outputs are High Z.
10-Bit Data Inputs
10-Bit Data Outputs
FUNCTION TABLE
(EACH BUFFER)
(1)
Inputs
OE
1
L
L
H
X
OE
2
L
L
X
H
Ax
L
H
X
X
Outputs
Yx
L
H
Z
Z
3-State
Function
Transparent
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
Z = High Impedance
2
IDT74LVC827A
3.3V CMOS 10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Operating Condition: T
A
= –40°C to +85°C
Symbol
V
IH
V
IL
I
IH
I
IL
I
OZH
I
OZL
I
OFF
V
IK
V
H
I
CCL
I
CCH
I
CCZ
∆I
CC
High Impedance Output Current
(3-State Output pins)
Input/Output Power Off Leakage
Clamp Diode Voltage
Input Hysteresis
Quiescent Power Supply Current
V
CC
= 0V, V
IN
or V
O
≤
5.5V
V
CC
= 2.3V, I
IN
= –18mA
V
CC
= 3.3V
V
CC
= 3.6V
V
IN
= GND or V
CC
—
—
—
—
—
—
—
–0.7
100
—
—
—
±50
–1.2
—
10
10
500
µA
V
mV
µA
V
CC
= 3.6V
V
O
= 0 to 5.5V
—
—
±10
µA
Parameter
Input HIGH Voltage Level
Input LOW Voltage Level
Input Leakage Current
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 2.3V to 2.7V
V
CC
= 2.7V to 3.6V
V
CC
= 3.6V
V
I
= 0 to 5.5V
Test Conditions
Min.
1.7
2
—
—
—
Typ.
(1)
—
—
—
—
—
Max.
—
—
0.7
0.8
±5
µA
V
Unit
V
Quiescent Power Supply Current
Variation
3.6
≤
V
IN
≤
5.5V
(2)
One input at V
CC
- 0.6V, other inputs at V
CC
or GND
µA
NOTES:
1. Typical values are at V
CC
= 3.3V, +25°C ambient.
2. This applies in the disabled state only.
OUTPUT DRIVE CHARACTERISTICS
Symbol
V
OH
Parameter
Output HIGH Voltage
V
CC
= 2.3V
V
CC
= 2.3V
V
CC
= 2.7V
V
CC
= 3V
V
CC
= 3V
V
OL
Output LOW Voltage
V
CC
= 2.3V to 3.6V
V
CC
= 2.3V
V
CC
= 2.7V
V
CC
= 3V
I
OH
= – 24mA
I
OL
= 0.1mA
I
OL
= 6mA
I
OL
= 12mA
I
OL
= 12mA
I
OL
= 24mA
Test Conditions
(1)
V
CC
= 2.3V to 3.6V
I
OH
= – 0.1mA
I
OH
= – 6mA
I
OH
= – 12mA
Min.
V
CC
– 0.2
2
1.7
2.2
2.4
2.2
—
—
—
—
—
Max.
—
—
—
—
—
—
0.2
0.4
0.7
0.4
0.55
V
Unit
V
NOTE:
1. V
IH
and V
IL
must be within the min. or max. range shown in the DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE table for the appropriate V
CC
range.
T
A
= – 40°C to + 85°C.
3
IDT74LVC827A
3.3V CMOS 10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
OPERATING CHARACTERISTICS, V
CC
= 3.3V ± 0.3V, T
A
= 25°C
Symbol
C
PD
C
PD
Parameter
Power Dissipation Capacitance per Buffer/Driver Outputs enabled
Power Dissipation Capacitance per Buffer/Driver Outputs disabled
Test Conditions
C
L
= 0pF, f = 10Mhz
Typical
24
5
Unit
pF
SWITCHING CHARACTERISTICS
(1)
V
CC
= 2.7V
Symbol
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
SK
(o)
Parameter
Propagation Delay
Ax to Yx
Output Enable Time
OEx
to Yx
Output Disable Time
OEx
to Yx
Output Skew
(2)
—
—
—
1
ns
—
7.3
1.8
6.7
ns
—
8.5
1
7.3
ns
Min.
—
Max.
7.1
V
CC
= 3.3V ± 0.3V
Min.
1
Max.
6.7
Unit
ns
NOTES:
1. See TEST CIRCUITS AND WAVEFORMS. T
A
= – 40°C to + 85°C.
2. Skew between any two outputs of the same package and switching in the same direction.
4
IDT74LVC827A
3.3V CMOS 10-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS
INDUSTRIAL TEMPERATURE RANGE
TEST CIRCUITS AND WAVEFORMS
TEST CONDITIONS
Symbol
V
LOAD
V
IH
V
T
V
LZ
V
HZ
C
L
V
CC(1)
= 3.3V±0.3V V
CC(1)
= 2.7V
6
2.7
1.5
300
300
50
6
2.7
1.5
300
300
50
V
CC(2)
= 2.5V±0.2V
2 x Vcc
Vcc
Vcc / 2
150
150
30
Unit
V
V
V
mV
mV
pF
SAME PHASE
INPUT TRANSITION
t
PLH
OUTPUT
t
PLH
OPPOSITE PHASE
INPUT TRANSITION
t
PHL
t
PHL
V
IH
V
T
0V
V
OH
V
T
V
OL
V
IH
V
T
0V
LVC Link
V
CC
500Ω
Pulse
(1, 2)
Generator
V
IN
D.U.T.
R
T
500Ω
C
L
V
OUT
V
LOAD
Open
GND
CONTROL
INPUT
Propagation Delay
ENABLE
DISABLE
V
IH
V
T
0V
V
LOAD/2
V
OL+
V
LZ
V
OL
V
OH
V
OH-
V
HZ
0V
LVC Link
t
PZL
OUTPUT
SWITCH
NORMALLY
V
LOAD
LOW
t
PZH
OUTPUT
SWITCH
NORMALLY
GND
HIGH
V
LOAD/2
V
T
t
PHZ
V
T
0V
t
PLZ
LVC Link
Test Circuit for All Outputs
DEFINITIONS:
C
L
= Load capacitance: includes jig and probe capacitance.
R
T
= Termination resistance: should be equal to Z
OUT
of the Pulse Generator.
NOTES:
1. Pulse Generator for All Pulses: Rate
≤
10MHz; t
F
≤
2.5ns; t
R
≤
2.5ns.
2. Pulse Generator for All Pulses: Rate
≤
10MHz; t
F
≤
2ns; t
R
≤
2ns.
NOTE:
1. Diagram shown for input Control Enable-LOW and input Control Disable-HIGH.
Enable and Disable Times
SWITCH POSITION
Test
Open Drain
Disable Low
Enable Low
Disable High
Enable High
All Other Tests
Switch
V
LOAD
GND
Open
DATA
INPUT
TIMING
INPUT
ASYNCHRONOUS
CONTROL
SYNCHRONOUS
CONTROL
V
IH
V
T
0V
V
OH
V
T
V
OL
V
OH
V
T
V
OL
t
SU
t
H
t
REM
t
SU
t
H
V
IH
V
T
0V
V
IH
V
T
0V
V
IH
V
T
0V
V
IH
V
T
0V
LVC Link
INPUT
Set-up, Hold, and Release Times
t
PLH1
t
PHL1
OUTPUT 1
t
SK
(x)
t
SK
(x)
LOW-HIGH-LOW
PULSE
t
W
HIGH-LOW-HIGH
PULSE
V
T
OUTPUT 2
t
PLH2
t
PHL2
V
T
Pulse Width
LVC Link
LVC Link
t
SK
(x)
= t
PLH2
-
t
PLH1
or
t
PHL2
-
t
PHL1
Output Skew - t
SK
(
X
)
NOTES:
1. For t
SK
(o) OUTPUT1 and OUTPUT2 are any two outputs.
2. For t
SK
(b) OUTPUT1 and OUTPUT2 are in the same bank.
5
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