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BF420, BF422
High Voltage Transistors
NPN Silicon
Features
•
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
D
830
6.6
T
J
, T
stg
−55 to +150
mW
mW/°C
°C
1
2
3
http://onsemi.com
COLLECTOR
2
BF420
300
300
5.0
50
100
BF422
250
250
Unit
Vdc
Vdc
Vdc
mAdc
mA
1
EMITTER
3
BASE
MARKING
DIAGRAM
TO−92
CASE 29
STYLE 14
BF42x
AYWW
G
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead
Symbol
R
qJA
150
R
qJL
68
°C/W
Max
Unit
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on a FR4 board with 200 mm
2
of 1 oz copper and lead length of
5 mm.
BF42x = Device Code
x = 0 or 2
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BF420ZL1
BF420ZL1G
BF422
BF422G
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
†
2000/Ammo Box
2000/Ammo Box
5000 Units/Box
5000 Units/Box
BF422RL1
BF422RL1G
BF422ZL1
BF422ZL1G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
2000/Tape & Reel
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BF420/D
©
Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 4
BF420, BF422
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 5.0 Vdc, I
C
= 0)
V
(BR)CEO
BF420
BF422
V
(BR)CBO
BF420
BF422
V
(BR)EBO
BF420
BF422
I
CBO
BF420
BF422
I
EBO
BF420
BF422
−
−
100
−
−
−
0.01
−
nAdc
5.0
5.0
−
−
mAdc
300
250
−
−
Vdc
300
250
−
−
Vdc
Vdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 25 mAdc, V
CE
= 20 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
h
FE
BF420
BF422
V
CE(sat)
−
V
BE(sat)
−
2.0
0.5
Vdc
50
50
−
−
Vdc
−
SMALL−SIGNAL CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance
(V
CB
= 30 Vdc, I
E
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
f
T
60
C
re
−
1.6
−
pF
MHz
http://onsemi.com
2
BF420, BF422
120
100
hFE , DC CURRENT GAIN
80
60
40
−55°C
20
0
25°C
T
J
= +125°C
V
CE
= 10 Vdc
0.1
1.0
I
C
, COLLECTOR CURRENT (mA)
10
100
Figure 1. DC Current Gain
C
eb
@ 1MHz
C, CAPACITANCE (pF)
BANDWIDTH (MHz)
f T, CURRENT−GAIN
100
80
70
60
50
40
30
20
10
1.0
2.0 3.0
5.0 7.0 10
20
30
I
C
, COLLECTOR CURRENT (mA)
T
J
= 25°C
V
CE
= 20 V
f = 20 MHz
50 70 100
10
1.0
C
cb
@ 1MHz
0.1
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
1000
Figure 2. Capacitance
Figure 3. Current−Gain − Bandwidth
1.4
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (mA)
100
V
CE(sat)
@ 25°C, I
C
/I
B
= 10
V
CE(sat)
@ 125°C, I
C
/I
B
= 10
V
CE(sat)
@ −55°C, I
C
/I
B
= 10
V
BE(sat)
@ 25°C, I
C
/I
B
= 10
V
BE(sat)
@ 125°C, I
C
/I
B
= 10
V
BE(sat)
@ −55°C, I
C
/I
B
= 10
V
BE(on)
@ 25°C, V
CE
= 10 V
V
BE(on)
@ 125°C, V
CE
= 10 V
V
BE(on)
@ −55°C, V
CE
= 10 V
Figure 4. ”ON” Voltages
http://onsemi.com
3
BF420, BF422
PACKAGE DIMENSIONS
TO−92
(TO−226)
CASE 029−11
ISSUE AL
A
R
P
L
SEATING
PLANE
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Literature Distribution Center for ON Semiconductor
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Phone:
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Email:
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Japan:
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For additional information, please contact your
local Sales Representative.
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4
BF420/D
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