CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
I
D(ON)
I
GSS
r
DS(ON)
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
Measured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins and
the Center of Die
Measured from the Source
Lead, 6mm (0.25in) from
the Flange and the Source
Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
G
L
S
S
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±20V
I
D
= 3.0A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
10V, I
D
= 3.3A (Figure 12)
V
DD
= 200V, I
D
≈
5.5A, R
G
= 12Ω, R
L
= 36Ω,
V
GS
= 10V (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
Temperature
V
GS
= 10V, I
D
= 5.5A, V
DS
= 0.8 x Rated BV
DSS
,
I
G(REF)
= 1.5mA (Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating Temperature
MIN
400
2.0
-
-
5.5
TYP
-
-
-
-
-
MAX
-
4.0
25
250
-
±100
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
-
2.9
-
-
-
-
-
-
-
0.8
4.0
11
20
35
15
21
4
17
700
150
40
5.0
1.0
-
17
29
56
24
35
-
-
-
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
-
-
-
Internal Source Inductance
L
S
-
12.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1.67
30
o
C/W
o
C/W
2
IRF330
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current (Note 3)
SYMBOL
I
SD
I
SDM
TEST CONDITIONS
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
5.5
22
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
NOTES:
V
SD
t
rr
Q
RR
T
J
= 25
o
C, I
SD
= 5.5A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 5.5A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 5.5A, dI
SD
/dt = 100A/µs
-
140
0.93
-
400
2.4
1.6
660
4.3
V
ns
µC
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
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