IRFN350PBF: 产品描述Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN; 产品类别晶体管; 文件大小271KB，共7页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/; 标准

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IRFN350PBF概述

Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

IRFN350PBF规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
包装说明	CHIP CARRIER, R-CBCC-N3
针数	3
Reach Compliance Code	compliant
Is Samacsys	N
其他特性	HIGH RELIABILITY
雪崩能效等级（Eas）	700 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V
最大漏极电流 (ID)	14 A
最大漏源导通电阻	0.415 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
功耗环境最大值	150 W
最大脉冲漏极电流 (IDM)	56 A
认证状态	Not Qualified
参考标准	MIL-19500/592
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	300 ns
最大开启时间（吨）	225 ns
Base Number Matches	1

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PD-91551D

POWER MOSFET

SURFACE MOUNT(SMD-1)

Product Summary

Part Number

IRFN350

JANTX2N7227U

JANTXV2N7227U

REF:MIL-PRF-19500/592

400V, N-CHANNEL

HEXFET

MOSFET TECHNOLOGY

DS(on)

0.315

Ω

14A

HEXFET

MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-

state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-

established advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are well-

suited for applications such as switching power supplies,

motor controls, inverters, choppers, audio amplifiers,

high energy pulse circuits, and virtually any application

where high reliability is required. The HEXFET

transistor’s totally isolated package eliminates the need

for additional isolating material between the device and

the heatsink. This improves thermal efficiency and

reduces drain capacitance.

SMD-1

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Surface Mount

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 10V, TC = 25°C

Continuous Drain Current

ID @ VGS = 10V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

T STG

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temperature

Weight

9.0

150

1.2

±20

700

4.0

-55 to 150

300 (for 5 sec)

2.6 (Typical)

Units

W/°C

V/ns

°C

For footnotes refer to the last page

www.irf.com

12/12/07

IRFN350PBF相似产品对比

	IRFN350PBF
描述	Power Field-Effect Transistor, 14A I(D), 400V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
包装说明	CHIP CARRIER, R-CBCC-N3
针数	3
Reach Compliance Code	compliant
Is Samacsys	N
其他特性	HIGH RELIABILITY
雪崩能效等级（Eas）	700 mJ
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	400 V
最大漏极电流 (ID)	14 A
最大漏源导通电阻	0.415 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
功耗环境最大值	150 W
最大脉冲漏极电流 (IDM)	56 A
认证状态	Not Qualified
参考标准	MIL-19500/592
表面贴装	YES
端子形式	NO LEAD
端子位置	BOTTOM
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	300 ns
最大开启时间（吨）	225 ns
Base Number Matches	1

IRFN350PBF

IRFN350PBF概述

IRFN350PBF规格参数

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