MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF9030/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistors
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common - source amplifier applications in
26 volt base station equipment.
•
Typical Two - Tone Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — - 32.5 dBc
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9030LR1
MRF9030LSR1
945 MHz, 30 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
Freescale Semiconductor, Inc...
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
CASE 360B - 05, STYLE 1
NI - 360
MRF9030LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF9030LSR1
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
MRF9030LR1
MRF9030LSR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case
MRF9030LR1
MRF9030LSR1
Symbol
R
θJC
Symbol
V
DSS
V
GS
P
D
Value
68
- 0.5, + 15
92
0.53
117
0.67
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Max
1.9
1.5
Unit
°C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9030LR1 MRF9030LSR1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100
µAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 250 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
—
—
—
2.9
3.8
0.19
3
4
—
0.4
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 0.7 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
C
oss
C
rss
—
—
—
49.5
26.5
1
—
—
—
pF
pF
pF
(continued)
MRF9030LR1 MRF9030LSR1
2
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
18
19
—
dB
Symbol
Min
Typ
Max
Unit
η
37
41.5
—
%
IMD
—
- 32.5
- 28
dBc
IRL
—
- 15.5
-9
dB
Freescale Semiconductor, Inc...
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f1 = 945.0 MHz)
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 250 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
G
ps
—
19
—
dB
η
—
41.5
—
%
IMD
—
- 33
—
dBc
IRL
—
- 14
—
dB
P
1dB
—
30
—
W
G
ps
—
19
—
dB
η
—
60
—
%
Ψ
No Degradation In Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9030LR1 MRF9030LSR1
3
Freescale Semiconductor, Inc.
V
GG
+
C7
C8
C14
B1
B2
V
DD
+
C15
+
C16
+
C17
L1
RF
INPUT
C5
C9
L2
RF
OUTPUT
Z1
C1
Z2
Z3
Z4
Z5
Z6
Z7
DUT
Z8
Z9
Z10
Z11
Z12
C13
Z13
C2
C3
C4
C6
C10
C11
C12
Freescale Semiconductor, Inc...
B1
B2
C1, C8, C13, C14
C2, C4
C3
C5, C6
C7, C15, C16
C9, C10
C11
C12
C17
L1, L2
Z1
Z2
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors, B Case
0.8 pF to 8.0 pF Trim Capacitors
3.9 pF Chip Capacitor, B Case
7.5 pF Chip Capacitors, B Case
10
µF,
35 V Tantalum Capacitors
10 pF Chip Capacitors, B Case
9.1 pF Chip Capacitor, B Case
0.6 pF to 4.5 pF Trim Capacitor
220
µF,
50 V Electrolytic Capacitor
12.5 nH Surface Mount Inductors
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.500″ x 0.100″ Microstrip
0.215″ x 0.270″ Microstrip
0.315″ x 0.270″ Microstrip
0.160″ x 0.270″ x 0.520″, Taper
0.285″ x 0.520″ Microstrip
0.140″ x 0.270″ Microstrip
0.450″ x 0.270″ Microstrip
0.250″ x 0.060″ Microstrip
0.720″ x 0.060″ Microstrip
0.490″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
Taconic RF - 35 - 0300, 30 mil,
ε
r
= 3.55
Figure 1. 945 MHz Broadband Test Circuit Schematic
C7
V
DD
V
GG
C8
C9
L1
RF INPUT
C1
C2
C3
C5
C4 C6
C14
L2
C15 C16
C17
C13
CUT OUT AREA
C10
C11
C12
RF OUTPUT
MRF9030
900 MHz
Rev −02
Figure 2. 945 MHz Broadband Test Circuit Component Layout
MRF9030LR1 MRF9030LSR1
4
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
G
ps
η
V
DD
= 26 Vdc
P
out
= 30 W (PEP)
I
DQ
= 250 mA
Two −Tone, 100 kHz Tone Spac−
ing
η
, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
20
19
G ps , POWER GAIN (dB)
18
17
16
15
14
13
12
930
IMD
IRL
50
45
40
35
−30
−32
−34
−36
−38
960
−10
−12
−14
−16
−18
935
940
945
950
955
f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. Class AB Broadband Circuit Performance
20
19.5
G ps , POWER GAIN (dB)
19
18.5
18
17.5
17
1
10
P
out
, OUTPUT POWER (WATTS) PEP
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
100
I
DQ
= 375 mA
IMD, INTERMODULATION DISTORTION (dBc)
−20
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
300 mA
250 mA
200 mA
−30
I
DQ
= 200 mA
−40
300 mA
−50
375 mA
−60
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
250 mA
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
0
−10
−20
−30
−40
−50
5th Order
−60
−70
1
7th Order
10
P
out
, OUTPUT POWER (WATTS) PEP
100
3rd Order
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
G ps , POWER GAIN (dB)
22
20
18
16
14
12
10
0.1
η
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 945 MHz
IRL, INPUT RETURN LOSS (dB)
60
50
40
30
20
10
0
1
10
100
P
out
, OUTPUT POWER (WATTS) AVG.
η
, DRAIN EFFICIENCY (%)
G
ps
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9030LR1 MRF9030LSR1
5
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