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IRFS450B
November 2001
IRFS450B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
•
•
•
•
•
•
9.6A, 500V, R
DS(on)
= 0.39Ω @V
GS
= 10 V
Low gate charge ( typical 87 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
▲
●
●
G
!
G D S
TO-3PF
IRFS Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
IRFS450B
500
9.6
6.1
38.4
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
990
9.6
9.6
5.5
96
0.77
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ
--
--
Max
1.3
40
Units
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFS450B
Electrical Characteristics
Symbol
Parameter
T
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
500
--
--
--
--
--
--
0.55
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 4.8 A
V
DS
= 40 V, I
D
= 4.8 A
(Note 4)
2.0
--
--
--
0.31
11.5
4.0
0.39
--
V
Ω
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
2900
260
60
3800
340
80
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 400 V, I
D
= 14 A,
V
GS
= 10 V
(Note 4, 5)
V
DD
= 250 V, I
D
= 14 A,
R
G
= 25
Ω
(Note 4, 5)
--
--
--
--
--
--
--
45
130
260
125
87
13
39
100
270
530
260
113
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
V
GS
= 0 V, I
S
= 9.6 A
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 14 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
--
--
--
--
--
--
--
495
7.66
9.6
38.4
1.4
--
--
A
A
V
ns
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 19.3mH, I
AS
= 9.6A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
14A, di/dt
≤
300A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFS450B
Typical Characteristics
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
10
1
150 C
10
0
o
10
0
25 C
-55 C
o
o
※
Notes :
1. 250μ s Pulse Test
2. T
C
= 25℃
※
Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
10
-1
10
-1
-1
10
10
0
10
1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
1.2
V
GS
= 10V
10
1
R
DS(ON)
[
Ω
],
Drain-Source On-Resistance
0.9
V
GS
= 20V
0.6
I
DR
, Reverse Drain Current [A]
10
0
150℃
0.3
※
Note : T
J
= 25
℃
25℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
0.0
0
10
20
30
40
50
60
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
6000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
5000
10
V
DS
= 100V
V
DS
= 250V
4000
C
iss
V
GS
, Gate-Source Voltage [V]
8
Capacitance [pF]
V
DS
= 400V
3000
6
2000
C
oss
C
rss
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
4
1000
2
※
Note : I
D
= 14 A
0
-1
10
0
10
0
10
1
0
10
20
30
40
50
60
70
80
90
100
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
IRFS450B
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
0.5
※
Notes :
1. V
GS
= 10 V
2. I
D
= 7.0 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
10
10
2
Operation in This Area
is Limited by R
DS(on)
8
10
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
100
µ
s
1 ms
10 ms
DC
10
µ
s
6
10
0
4
10
-1
※
Notes :
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
o
2
10
-2
10
0
10
1
10
2
10
3
0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
(t), T h e r m a l R e s p o n s e
10
0
D = 0 .5
※
N o te s :
1 . Z
θ
J C
(t) = 1 .3
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
0 .2
0 .1
10
-1
0 .0 5
P
DM
0 .0 2
0 .0 1
s in g le p u ls e
10
-2
θ
JC
Z
t
1
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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