MC74VHC1G00
Single 2-Input NAND Gate
The MC74VHC1G00 is an advanced high speed CMOS 2−input
NAND gate fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74VHC1G00 input structure provides protection when
voltages up to 7.0 V are applied, regardless of the supply voltage. This
allows the MC74VHC1G00 to be used to interface 5.0 V circuits to
3.0 V circuits.
Features
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MARKING
DIAGRAMS
5
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
V1M
G
G
M
•
•
•
•
•
•
•
High Speed: t
PD
= 3.0 ns (Typ) at V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 56
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
1
5
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
V1
M
G
= Device Code
= Date Code*
= Pb−Free Package
V1 M
G
G
1
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
IN B
1
5
V
CC
1
2
3
4
5
PIN ASSIGNMENT
IN B
IN A
GND
OUT Y
V
CC
IN A
2
GND
3
4
OUT Y
Figure 1. Pinout
(Top View)
FUNCTION TABLE
Inputs
A
IN A
IN B
&
L
L
H
H
B
L
H
L
H
Output
Y
H
H
H
L
OUT Y
Figure 2. Logic Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 20
1
Publication Order Number:
MC74VHC1G00/D
MC74VHC1G00
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
SC70−5/SC−88A (Note 1)
TSOP−5
SC70−5/SC−88A
TSOP−5
Parameter
Value
*0.5
to +7.0
−0.5
to +7.0
*0.5
to V
CC
+0.5
−20
±20
±12.5
±25
*65
to +150
260
+150
350
230
150
200
Level 1
UL 94 V−0 @ 0.125 in
> 2000
> 200
N/A
±500
V
Unit
V
V
V
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
I
LATCHUP
Latchup Performance
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 V
$
0.3 V
V
CC
= 5.0 V
$
0.5 V
Parameter
Min
2.0
0.0
0.0
*55
0
0
Max
5.5
5.5
V
CC
+125
100
20
Unit
V
V
V
°C
ns/V
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74VHC1G00
DC ELECTRICAL CHARACTERISTICS
V
CC
Symbol
V
IH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
V
IN
= V
IH
or V
IL
I
OH
=
−50
mA
V
IN
= V
IH
or V
IL
I
OH
=
−4
mA
I
OH
=
−8
mA
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
IN
I
CC
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
1.9
2.9
4.4
2.58
3.94
0.0
0.0
0.0
0.1
0.1
0.1
0.36
0.36
±0.1
1.0
2.0
3.0
4.5
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.48
3.80
0.1
0.1
0.1
0.44
0.44
±1.0
10
T
A
= 255C
Typ
Max
T
A
v
855C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
1.9
2.9
4.4
2.34
3.66
0.1
0.1
0.1
0.52
0.52
±1.0
40
mA
mA
V
Max
*555C
to 1255C
Min
1.5
2.1
3.15
3.85
0.5
0.9
1.35
1.65
Max
Unit
V
V
IL
Maximum Low−Level
Input Voltage
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
AC ELECTRICAL CHARACTERISTICS
Input t
r
= t
f
= 3.0 ns
T
A
= 255C
Symbol
t
PLH
,
t
PHL
Parameter
Maximum Propagation
Delay, Input A or B to Y
Test Conditions
V
CC
= 3.3
$
0.3 V C
L
= 15 pF
C
L
= 50 pF
V
CC
= 5.0
$
0.5 V C
L
= 15 pF
C
L
= 50 pF
Min
Typ
4.5
5.6
3.0
3.8
5.5
Max
7.9
11.4
5.5
7.5
10
T
A
v
855C
Min
Max
9.5
13.0
6.5
8.5
10
*555C
to 1255C
Min
Max
11.0
15.5
Unit
ns
ÎÎ Î Î ÎÎ Î Î Î
Î Î Î
Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î ÎÎ Î Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î ÎÎ Î Î Î
ÎÎ Î Î Î
Î
Î
ÎÎ Î Î Î
Î Î Î
Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î ÎÎ Î Î Î
Î
ÎÎÎÎÎÎÎÎÎ Î Î Î
Î Î ÎÎ Î Î Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
8.0
10.0
10
C
IN
Maximum Input
Capacitance
pF
Typical @ 25°C, V
CC
= 5.0 V
10
C
PD
Power Dissipation Capacitance (Note 6)
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
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3
MC74VHC1G00
A or B
V
CC
50%
t
PLH
Y
50% V
CC
t
PHL
GND
Figure 4. Switching Waveforms
V
CC
INPUT
C
L*
OUTPUT
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended
for propagation delay tests.
Figure 5. Test Circuit
ORDERING INFORMATION
Device
MC74VHC1G00DFT1G
MC74VHC1G00DFT2G
MC74VHC1G00DTT1G
NLVVHC1G00DTT1G*
Package
SC70−5/SC−88A/SOT−353
(Pb−Free)
3000 / Tape & Reel
SOT23−5/TSOP−5/SC59−5
(Pb−Free)
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
MC74VHC1G00
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
G
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
B
C
D
G
H
J
K
N
S
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
---
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
---
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
5
4
S
1
2
3
−B−
D
5 PL
0.2 (0.008)
M
B
M
N
J
C
SOLDER FOOTPRINT
K
0.50
0.0197
H
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
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