AGB3301
PRELIMINARY DATA SHEET - Rev 1.5
·
·
·
·
·
·
·
·
·
50W High IP3 Low Noise
Wideband Gain Block
FEATURES
250-3000 MHz Frequency Range
+45 dBm Output IP3
Low Noise Figure: 2.4 dB at 900 MHz
13.5 dB Gain at 900 MHz
+24 dBm P1dB
SOT-89 Package
Single +5V to +9V Supply
Low Power: less than 1 Watt
Case Temperature: -40 to +100
o
C
APPLICATIONS
·
·
·
·
·
Cellular Base Stations for W-CDMA, CDMA,
TDMA, GSM, PCS and CDPD systems
Fixed Wireless
MMDS/WLL
WLAN, HyperLAN
CATV
S24 Package
SOT-89
wireless infrastructure applications such as Cellular
Base Stations, MMDS, and WLL. Offered in a low
cost SOT-89 surface mount package, the AGB3301
requires a single +5V to +9V supply, and typically
consumes less than 1 Watt of power.
PRODUCT DESCRIPTION
The AGB3301 is one of a series of GaAs MESFET
amplifiers designed for use in applications
requiring high linearity, low noise and low distortion.
With a high output IP3, low noise figure and wide
band operation, the AGB3301 is ideal for 50W
RF Input
RF Output
/ Bias
Figure 1: Block Diagram
12/2001
AGB3301
GND
4
1
RF
IN
2
GND
Figure 2: Pin Out
3
RF
OUT
Table 1: Pin Description
PIN
1
2
3
4
N AME
RF
IN
GND
RF
OUT
GND
D ESC R IPTION
RF Input
Ground
RF Output / Bi as
Ground
2
PRELIMINARY DATA SHEET - Rev 1.5
12/2001
AGB3301
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PAR AMETER
D evi ce Voltage
RF Input Power
Storage Temperature
Solderi ng Temperature
Solderi ng Ti me
MIN
0
-
-40
-
-
MAX
+12
+15
+150
TBD
TBD
U N IT
VD C
dB m
°C
°C
se c
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
PAR AMETER
Frequency Range: f
D evi ce Voltage: V
DD
Thermal Resi stance:
q
JC
C ase Temperature: T
C
MIN
250
-
-
-40
TYP
-
+9
-
-
MAX
3000
+10
40
+100
U N IT
MHz
VD C
o
C /W
o
C
The device may be operated safely over these conditions; however,
parametric performance is guaranteed only over the conditions defined
in the electrical specifications.
PRELIMINARY DATA SHEET - Rev 1.5
12/2001
3
AGB3301
Table 4: Electrical Specifications - Unmatched 50W Test Circuit
(T
A
= +25 °C, V
DD
= +9 VDC, f = 900 MHz, see Figure 3)
PAR AMETER
Gai n: S
21
Input Return Loss: S
11
Output Return Loss: S
22
Output IP3
(1)
MIN
12
-
-
+42
-
-
90
TYP
13.5
-15
-15
+45
2.4
+24
110
MAX
15
-10
-10
-
3.5
-
130
U N IT
dB
dB
dB
dB m
dB
dB m
mA
Noi se Fi gure
Output 1dB C ompressi on: P1dB
Supply C urrent
Notes:
(1) OIP3 is measured with two tones: 900 MHz and 901 MHz, +5dBm output per
tone.
V
SUPPLY
Bypass
RF Choke
DC Block
RF
Input
AGB3300
DC Block
V
DD
RF
Output
Figure 3: Unmatched 50W Test Circuit
4
PRELIMINARY DATA SHEET - Rev 1.5
12/2001
AGB3301
PERFORMANCE DATA
Figures 4 through 8 contain data for the device as tested in the unmatched 50W test circuit shown in Figure 3.
Unless otherwise indicated, V
DD
= +9 VDC.
Figure 4: OIP3 vs. Frequency
(in Unmatched 50W Test Circuit)
50
50
Figure 5: OIP3 vs. Case Temperature
(in Unmatched 50W Test Circuit)
45
45
OIP3 (dBm)
OIP3 (dBm)
Output Power = +5 dBm
T
A
= +25
o
C
40
40
35
35
30
30
Output Power = +5 dBm
Frequency = 900 MHz
25
0
300
600
900
1200
1500
1800
2100
2400
2700
3000
25
-50
-25
0
25
50
o
75
100
Frequency (MHz)
Case Temperature ( C)
Figure 6: Gain vs. Frequency
(in Unmatched 50W Test Circuit)
16
14
13.5
14
Figure 7: Gain vs. Case Temperature
(in Unmatched 50W Test Circuit)
12
13
10
Gain (dB)
8
6
Gain (dB)
12.5
12
4
2
0
0
300
600
900
1200
1500
1800
2100
2400
2700
3000
T
A
= +25
o
C
11.5
Frequenc y = 900 MHz
11
-50
-25
0
25
50
o
75
100
Frequency (MHz)
Case Tem perture ( C)
5
0
-5
Figure 8: Return Loss vs. Frequency
(in Unmatched 50W Test Circuit)
Return Loss (dB)
-10
-15
-20
-25
-30
-35
-40
0
300
600
900
1200
1500
1800
2100
2400
2700
3000
S11
S22
T
A
= +25
o
C
Frequency (MHz)
PRELIMINARY DATA SHEET - Rev 1.5
12/2001
5
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